Measure and provide feedback for curvature, stress, reflectivity and growth rate to improve production processes and increase profitability with the kSA MOS.

kSA MOS for thin-film stress measurement animation

Understanding and controlling stress in thin-film and thermal annealing processes is critical for achieving the desired optical, electronic, and mechanical properties.  Many of today’s high performance devices rely on or must be designed with “built-in” stress within the individual layers for tailoring specific characteristics.  However, unwanted changes in thin-film stress can be introduced at any stage of the fabrication process and may lead to a reduction in device performance as well as delamination or cracking of deposited films.

Traditional ex situ stress/strain measurement methods such as XRD or surface profiling only measure the overall stress after the process is done, but completely miss the dynamic changes in thin-film stress occurring during the process.  Being able to measure the stress/strain in situ, during the process gives important insight into mechanisms and methods for controlling and targeting the overall stress induced into the sample during every step.

For more information see the Product Specification Sheet →

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