kSA BandiT Temperature Monitoring

Typical substrate/film materials include: GaAs, InP, Si, SiC, GaN, ZnSe, ZnTe, ZnO, CdTe, and SrTiO3.

kSA BandiT is available as either a Single Wafer or a Multi Wafer system.

Different spectrometers allow different spectral range analysis:

• BandiT-NIR has spectrometer and optics tailored for analysis in the 875-1400nm range
• BandiT-VIS has spectrometer and optics tailored for analysis in the 350-600nm range

 Other options include Rotational Triggering, Platen Scanning and Wafer Mapping

Accessories that can be added to the kSA BandiT:

• Rotational Triggering Module (RMAT)
• Pulse Control

kSA BandiT may be integrated onto most any MBE, MOCVD, or custom deposition chamber.  New optics solutions allow for combining of other kSA product technologies such as kSA MOS to provide further in-situ information where viewport  (2D thin film stress) space is limited.

References

k-Space references are a compilation of published papers that either offer a review of the techniques used by the kSA BandiT, or specifically use the kSA BandiT for work within the paper.

Reduction of Process Variation Through Automated Substrate Temperature Uniformity Mapping in Multi-Wafer MBE Systems

Thomas J. Rogers, Likang Li, Robert Yanka, Chris Santana

Jason R. Williams, Charles A. Taylor II, Darryl Barlett

The International Conference on Compound Semiconductor Manufacturing Technology 2008

Adsorption-controlled molecular-beam epitaxial growth of BiFeO3

J.F. Ihlefeld, A. Kumar, V. Gopalan, D.G. Schlom, Y.B. Chen, X.Q. Pan, T. Heeg,

J. Schubert, X. Ke, P. Schiffer, J. Orenstein, L.W. Martin, Y.H. Chu, and R. Ramesh

Applied Physics Letters 91, 2007, pp. 071922

 

Substrate temperature measurement using a commercial band-edge detection system

I. Farrer, J.J. Harris, R. Thomson, D. Barlett, C.A. Taylor II, and D.A. Ritchie

2006 MBE Conference: Tokyo
 

Growth related interference effects in band edge thermometry of semiconductors

R. N. Sacks, D. Barlett, C. A. Taylor II, and J. Williams

J.V.S.T. B 23, 2005
 

In situ temperature control of MBE growth using band-edge thermometry

Shane Johnson, Chau-Hong Kuo, Martin Boonzaayer, Wolfgang Braun,
Ulrich Koelle, Yong-Hang Zhang, and John Roth

J.V.S.T. B 16, 1998, pp. 1502-1506
 

Precision of noninvasive temperature measurement by diffuse reflectance spectroscopy

T.P. Pearsall, Stevan R. Saban, James Booth, Barrett T. Beard Jr., and S.R. Johnson

Rev. Sci. Instrum. 66, 1995, pp. 4977-4980
 

Diffuse optical reflectivity measurements on GaAs during MBE processing

C. Lavoie, S.R. Johnson, J.A. Mackenzie, T. Tiedje, and T. van Buuren

J.V.S.T. A 10, 1992, pp. 930-933

kSA BandiT determines semiconductor temperature by monitoring the band gap absorption edge from the wafer of interest.

BandiT combines a new BlackBody emission monitoring technology whereby the spectral radiation intensity of a sample is fit in real time to Planck’s equation to determine temperature. This technique is complimentary to band edge thermometry for narrow gap semiconductors and metal temperature monitoring applications. See kSA Tech note for more details.

BandiT also includes broad band pyrometry capabilty to provide a complete set of measurement techniques.

Multiple wafer and temperature mapping. By combining tailored detector optics packages, kSA BandiT can provide multiple wafer temperature during growth and is the only temperature monitoring technique which can provide full 2D temperature information during sample heating. See flyer for more details.

kSA BandiT has the ability to determine deposition rate from pyrometric interference oscillations in radiated light from the sample surface at a given wavelength within the spectrometer range.  This post deposition technique also provides a ‘fingerprint’ of wavelength intensity changes vs. time during device deposition.

A second approach included within BandiT monitors peak and valley inflection points across the wavelength range within the spectrometer range.  By fitting these points in real-time, thickness measurements can be made on the sample at any time during or after the deposition has concluded.

By monitoring changes in diffuse reflectivity signal vs. wavelength, kSA BandiT can provide a qualitative measurement of surface roughness.

kSA BandiT monitors the optical absorption edge of a semiconductor film at most any temperature.  This capability allows for real-time ‘tuning’ of optical properties related to semiconductor band gap during the deposition process.

k-Space has a long history of continued innovation with the kSA BandiT through close collaboration with its customer base.  As such, kSA listens carefully to customer input and has appropriate engineering staff to respond quickly for integration of new capabilities to our products.  Please contact k-Space to discuss your BandiT application in further detail.

Wavelength Ranges

350-600 nm (BandiT Visible (VIS) model)

875-1400 nm (BandiT Near-IR (NIR) model)
 

Temperature Update Rate

20 Hz (typical)

1 Hz (minimum)
 

Typical Temperature Ranges

Material	Range	Model
ZnSe	RT-700°C	VIS
ZnTe	RT-800°C	VIS
ZnO	RT-1300°C	VIS
SiC	RT-1300°C	VIS
SrTiO	RT-1300°C	VIS
CdS	RT-800°C	VIS
CdTe	RT-800°C	VIS
GaN	RT-1300°C	VIS
GaAs	RT-780°C	NIR
InP	RT-550°C	NIR
Si	RT-550°C	NIR

 

Temperature Resolution

±1.5 °C VIS
±0.1 °C NIR
 

Stability

± 0.2 °C (4 hours) VIS
± 1.0 °C (4 hours) NIR
 

Accuracy

2 °C
 

Outputs

Real-time display

10V analog (configurable)
 

Inputs

analog (configurable)



kSA BandiT flyer
          Two-page flyer describing the features of the kSA BandiT

Specifications
          kSA BandiT Product Specifications

Wafer Mapping
          kSA BandiT Multi-wafer and Platen mapping data sheet

kSA BandiT Application Notes are documents written about a specific component or components of the kSA BandiT real-time wafer temperature system. These documents are designed to explain details of the kSA BandiT capabilities and aid the user in maximizing the utility of the system. k-Space User Manuals are available for download as well by contacting us.

kSA BandiT Black Body Temperature Measurement (11-15-08)
 

kSA BandiT for Growth Rate (03-12-07)
 

kSA BandiT for GaN (03-12-07)

 

kSA Band Edge Thermometry vs. Emissivity-Corrected Pyrometry (3-09-07)

The purpose of this document is to evaluate the current state of the art with respect to both methods while discussing advantages and disadvantages of each with respect to typical applications.

kSA BandiT Measures SiC Substrate Temperature (7-01-08)

This paper addresses the technological challenges of SiC temperature measurement, and shows some reproducibility results obtained with kSA BandiT.

Hot MBE Sources BET vs. Pyrometry (12-15-08)

k-Space white papers are documents that describe a technology or technologies utilized by a k-Space product. White papers may also include calibration procedures, application to various technologies, or comparisons with similar products.

Note that some documents may contain proprietary information, and therefore are password protected. If you are a k-Space customer, please email us requesting a username and password, and we will respond via email with a proper username and password, allowing you access to the document.

BandiT Spectrometer Calibration (2-11-05)

This document describes the procedure for checking the calibration of the spectrometer.
 

kSA BandiT Calibration (11-30-04)

This paper gives a detailed description of how calibration files are generated for the kSA BandiT system, and how BandiT temperature measurement accuracy is independently verified using known RHEED surface transition temperatures.
 

kSA BandiT: Band-edge Thermometry (02-03-04)

A PowerPoint presentation describing the kSA BandiT system, including both hardware and software components. Data is also presented highlighting the features of the BandiT system, including low temperature measurement and spatially-resolved temperature measurement during substrate rotation.