The 20th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE XX) focuses on the latest developments in science, technology, and applications of MOVPE and related growth techniques.
Joan Redwing of Penn State University, one of the plenary speakers, has used kSA MOS for thin film stress measurement extensively in her research. She has published research multiple papers citing kSA MOS, including a recent publication titled “GaN Heteroepitaxy on Strain-Engineered (111) Si/Si1-xGex” in Journal of Electronic Materials (May 2019).
Stop by our booth to learn more about semiconductor metrology and specific applications for your MOVPE materials. The kSA ICE is of particular interest to MOVPE scientists for its modular capabilities for temperature, reflectivity and growth rate, and stress and curvature measurement.