k-Space Associates, Inc.

kSA BandiT References

k-Space references are a compilation of published papers that either offer a review of the techniques used by the kSA BandiT, or specifically use the kSA BandiT for work within the paper. The references below are arranged by date, with the most recent references listed at the top.

Composition, Microstructure, and Electrical Performance of Sputtered SnO Thin Films for p-Type Oxide Semiconductor
Seung Jun Lee, Younjin Jang, Han Joon Kim, Eun Suk Hwang, Seok Min Jeon, Jun Shik Kim, Taehwan Moon, Kyung-Tae Jang, Young-Chang Joo, Deok-Yong Cho, and Cheol Seong Hwang

ACS Applied Materials & Interfaces 2018 10 (4), 3810-3821 ; DOI: 10.1021/acsami.7b17906

Phase and Microstructures in Sputter Deposited Nanocrystalline Fe-Cr Thin Films
Xuyang Zhou , Gregory B. Thompson

Materialia (2018), doi: https://doi.org/10.1016/j.mtla.2018.07.007

Crystallographically aligned 1.508 eV nitrogen pairs in ultra-dilute GaAs:N
Brian Fluegel et al

2018 Jpn. J. Appl. Phys. 57 090302; https://doi.org/10.7567/JJAP.57.090302

Vapor-defect-solid growth mechanism for NanoNets utilizing natural defect networks in polycrystals
Zumin Wang, Eric J.Mittemeijer

Materials & Design, Volume 150, 15 July 2018, Pages 206-214; https://doi.org/10.1016/j.matdes.2018.04.005

Luminescent N-polar (In, Ga) N/GaN quantum wells achieved by plasma-assisted molecular beam epitaxy at temperatures exceeding 700° C
C. Chèze, F. Feix, J. Lähnemann, T. Flissikowski, M. Kryśko, P. Wolny, H. Turski, C. Skierbiszewski, and O. Brandt

Appl. Phys. Lett. 112, 022102 (2018); https://doi.org/10.1063/1.5009184

Influence of temperature and Al/N ratio on structural, chemical & electronic properties of epitaxial AlN films grown via PAMBE
Shubhendra Kumar Jain, Monu Mishra, Neha Aggarwal, Shibin Krishna, Bhasker Gahtori, Akhilesh Pandey, Govind Gupta

Applied Surface Science, Volume 455, 15 October 2018, Pages 919-923; https://doi.org/10.1016/j.apsusc.2018.06.070

Self-assembled stoichiometric barium titanate thin films grown by molecular beam epitaxy
T. Al.Morgan, M.Zamani-Alavijeh, S.Erickson, G.Story, W.Schroeder, A.Kuchuk, M.Benamar, G.J.Salamo

Journal of Crystal Growth, Volume 493, 1 July 2018, Pages 15-19; https://doi.org/10.1016/j.jcrysgro.2018.04.023

High-performance SWIR/MWIR and MWIR/MWIR bispectral MCT detectors by AIM
Heinrich Figgemeier, Christopher Ames, Johannes Beetz, Rainer Breiter, Detlef Eich, et al.

Conference Proceedings of SPIE Defense + Security, 2018, Orlando, Florida, United States

Electrical Properties of Midwave and Longwave InAs/GaSb Superlattices Grown on GaAs Substrates by Molecular Beam Epitaxy
Benyahia, Ł. Kubiszyn, K. Michalczewski, J. Boguski, A. Kębłowski, P. Martyniuk, J. Piotrowski and A. Rogalski

Nanoscale Research Letters (2018) 13:196

Self-Assembled Barium Titanate Nanoscale Films by Molecular Beam Epitaxy
Timothy Allen Morgan

University of Arkansas, Fayetteville, 2018

Interfacial Misfit Array Technique for GaSb Growth on GaAs
(001) Substrate by Molecular Beam Epitaxy
D. Benyahia, Ł. Kubiszyn, K. Michalczewski, A. Keblowski, 
P. Martyniuk, J. Piotrowski, and A. Rogalski

Journal of Electronic Materials, 07 September 2017

A Highly Responsive Self-Driven UV Photodetector Using GaN Nanoflowers
N. Aggarwal, S. Krishna, A. Sharma, L. Goswami, D. Kumar, S. Husale, G. Gupta

Adv. Electron. Mater. 2017, 3, 1700036; https://doi.org/10.1002/aelm.201700036

Tailoring the optical properties of InAs/GaAs quantum dots by means of GaAsSb, InGaAs and InGaAsSb strain reducing layers
A.Salhi, S.Alshaibani, B.Ilahi, M.Alhamdan, A.Alyamani, H.Albrithen, M.El-Desouki

Journal of Alloys and Compounds, Vol. 714, August 2017, Pages 331-337

Luminescent properties of GaAsBi/GaAs double quantum well heterostructures
Yu.I. Mazur, V.G. Dorogan, L. Dias, D. Fan, M. Schmidbauer, M.E. Ware, Z.Ya. Zhuchenko, S.S. Kurlov, G.G. Tarasov, S.-Q. Yu, G.E. Marques, G.J. Salamo

Journal of Luminescence, Vol. 188, August 2017, Pages 209-216

Electron-Beam Deposition of Superconducting Molybdenum Thin Films for the Development of Mo/Au TES X-ray Microcalorimeter
Fred Michael Finkbeiner, Joseph S. Adams, Simon R. Bandler, Gabriele L. Betancourt-Martinez, Ari David Brown, Meng-Ping Chang, James A. Chervenak, Meng P. Chiao, Aaron M. Datesman, Megan E. Eckart, Richard L. Kelley, Caroline A. Kilbourne, Antoine R. Miniussi, Samuel J. Moseley, Frederick Scott Porter, John E. Sadleir, Kazuhiro Sakai, Stephen James Smith, Nicholas A. Wakeham, Edward J. Wassell, and Wonisk Yoon

IEEE Transactions on Applied Superconductivity, VOL. 27, NO. 4, JUNE 2017

Carrier dynamics in GaAsBi quantum wells
S. Azaizia, A. Balocchi, D. Lagarde, A. Arnoult, X. Marie, C. Fontaine, H. Carrère

Nanotechnology Materials and Devices Conference, 2016 IEEE

ErAsSb nanoparticle growth on GaAs surface by molecular beam epitaxy
Yuanchang Zhang, Kurt G. Eyink, Joseph Peoples, Krishnamurthy Mahalingam, Madelyn Hill, Larry Grazulis

Journal of Crystal Growth, Vol 435, 2016, pp. 62-67

MCT by MBE on GaAs at AIM: State of the Art and Roadmap
H. Figgemeier, J. Wenisch, D. Eich, S. Hanna, W. Schirmacher, H. Lutz, T. Schallenberg, R. Breiter

Proc. SPIE 9451, Infrared Technology and Applications XLI, 945127 (June 4, 2015)

Growth and Characterization of Epitaxial Al Layers on GaAs and Si Substrates for Superconducting CPW Resonators in Scalable Quantum Computing Systems
Julie Tournet, University of Waterloo

University of Waterloo Theses & Dissertations, 2015

Evaluation of HgCdTe on GaAs Grown by Molecular Beam Epitaxy for High-Operating-Temperature Infrared Detector Applications
J. Wenisch, W. Schirmacher, R. Wollrab, D. Eich, S. Hanna, R. Breiter, H. Lutz, and H. Figgemeier

Journal of Electronic Materials September 2015, Volume 44, Issue 9, pp 3002-3006

Molecular beam epitaxial growth of Bi2Te3 and Sb2Te3 topological insulators on GaAs (111) substrates: a potential route to fabricate topological insulator p-n junction
Zhaoquan Zeng, Timothy A. Morgan, Dongsheng Fan, Chen Li, Yusuke Hirono, Xian Hu, Yanfei Zhao, Joon
Sue Lee, Jian Wang, Zhiming M. Wang, Shuiqing Yu, Michael E. Hawkridge, Mourad Benamara, and Gregory J. Salamo

AIP Advances 3, 072112 (2013); https://doi.org/10.1063/1.4815972

Reduction of Process Variation Through Automated Substrate Temperature Uniformity Mapping in Multi-Wafer MBE Systems
Thomas J. Rogers, Likang Li, Robert Yanka, Chris Santana, Jason R. Williams, Charles A. Taylor II, Darryl Barlett

The International Conference on Compound Semiconductor Manufacturing Technology 2008

Adsorption-controlled molecular-beam epitaxial growth of BiFeO3
J.F. Ihlefeld, A. Kumar, V. Gopalan, D.G. Schlom, Y.B. Chen, X.Q. Pan, T. Heeg, J. Schubert, X. Ke, P. Schiffer, J. Orenstein, L.W. Martin, Y.H. Chu, and R. Rames

Applied Physics Letters 91, 2007, pp. 071922

Substrate temperature measurement using a commercial band-edge detection system
I. Farrer, J.J. Harris, R. Thomson, D. Barlett, C.A. Taylor II, and D.A. Ritchie

2006 MBE Conference: Tokyo

Growth related interference effects in band edge thermometry of semiconductors.
R. N. Sacks, D. Barlett, C. A. Taylor II, and J. Williams

J.V.S.T. B 23, 2005

In situ temperature control of MBE growth using band-edge thermometry.
Shane Johnson, Chau-Hong Kuo, Martin Boonzaayer, Wolfgang Braun, Ulrich Koelle, Yong-Hang Zhang, and John Roth

J.V.S.T. B 16, 1998, pp. 1502-1506

Precision of noninvasive temperature measurement by diffuse reflectance spectroscopy.
T.P. Pearsall, Stevan R. Saban, James Booth, Barrett T. Beard Jr., and S.R. Johnson

Rev. Sci. Instrum. 66, 1995, pp. 4977-4980

Diffuse optical reflectivity measurements on GaAs during MBE processing.
C. Lavoie, S.R. Johnson, J.A. Mackenzie, T. Tiedje, and T. van Buuren.

J.V.S.T. A 10, 1992, pp. 930-933