The articles referenced on this page were written by researchers who use k-Space metrology tools for their thin-film research. These articles appear in research journals and have been peer-reviewed by other thin-film experts.

Chemical Vapor Deposition of Cubic Boron Nitride 
Anthony Rice, Mary Crawford 

No. SAND2021-11580R. Sandia National Lab.(SNL-NM), Albuquerque, NM (United States), 2021.

Growth of AlN on sapphire: Predicting the Optimal Nucleation Density by Surface Kinetics Modeling
Shashwat Rathkanthiwar, Anisha Kalra, Rangarajan Muralidharan, Digbijoy N. Nath, and Srinivasan Raghavan

Journal of Applied Physics 127, 205301 (2020); https://doi.org/10.1063/1.5127193

Reduced Dislocation Introduction in III-V Si Heterostructures with Glide-Enhancing Compressively Strained Superlattices
Jacob T. Boyer, Ari N. Blumer, Zak H. Blumer, Daniel L. Lepkowski, and Tyler J. Grassman

Crystal Growth & Design September 15, 2020, 20, 10, 6939–6946; https://doi.org/10.1021/acs.cgd.0c00992

Si-Matched BxGa1-xP Grown via Hybrid Solid- and Gas-Source Molecular Beam Epitaxy
Zak H. Blumer, Jacob T. Boyer, Ari N. Blumer, Daniel L. Lepkowski, and Tyler J. Grassman

Applied Physics Letters, Lett. 117, 122102 (2020); https://doi.org/10.1063/5.0021493

Impact of Pits Formed in the AlN Nucleation Layer on Buffer Leakage in GaN/AlGaN High Electron Mobility Transistor Structures on Si (111)
Shashwat Rathkanthiwar, Anisha Kalra, Nayana Remesh, Abheek Bardhan, Rangarajan Muralidharan, Digbijoy N. Nath, and Srinivasan Raghavan

J. Appl. Phys. 127, 215705 (2020) https://doi.org/10.1063/1.5140507

An In Situ Monitored and Controlled Etch Process to Suppress Mg Memory Effects in MOCVD GaN Growth on Si Substrate
Rohith Soman, Srinivasan Raghavan, and Navakanta Bhat

Semiconductor Science and Technology, Volume 34, Number 12; https://doi.org/10.1088/1361-6641/ab5006

Buried Channel Normally-Off AlGaN/GaN MOS-HEMT with a pn Junction in GaN Buffer
Rohith Soman, Manish Sharma, Nayana Ramesh, Digbijoy Nath, R Muralidharan, K N Bhat, Srinivasan Raghavan, and Navakanta Bhat

Semiconductor Science and Technology, Volume 33, Number 9; doi.org/10.1088/1361-6641/aad2bb

Phase Degradation in BxGa1−xN Films Grown at Low Temperature by Metalorganic Vapor Phase Epitaxy
Brendan P.Gunning, Michael W.Moseley, Daniel D.Koleske, Andrew A.Allerman, Stephen R.Lee

Journal of Crystal Growth, Vol 464, 2017, pp. 190-196

Mocvd Growth of Group-III Nitrides on Silicon Carbide: From Thin Films to Atomically Thin Layers
Zakaria Y. Al Balushi

The Pennsylvania State University, 2017

Visible-Blind APD Heterostructure Design With Superior Field Confinement and Low Operating Voltage
John Bulmer, Puneet Suvarna, Jeff Leathersich, Jonathan Marini, Isra Mahaboob, Neil Newman, F. Shadi Shahedipour-Sandvik

IEEE Photonics Technology Letters (Volume:28, Issue: 1) 2015

In Situ Reflectance and Virtual Interface Analysis for Compound Semiconductor Process Control
William G. Breiland, Hong Q. Hou, Burrel E. Hammons, and John F. Klem, Sandia National Laboratories

XXVIII SOTAPOCS Symposium, Electrochemical Society, San Diego, CA, May 3-8, 1998

In Situ Pre-Growth Calibration Using Reflectance as a Control Strategy for MOCVD Fabrication of Device Structures
William G. Breiland, Hong Q. Hou, Herman C. Chui, and Burrel E. Hammons, Sandia National Laboratories

Journal of Crystal Growth, 174(1997)564.

Effects of Radio Frequency Bias on the Structure Parameters and Mechanical Properties of Magnetron-Sputtered Nb Films 
Zegang Ni, Yuan Zhong, Xingfu Tao, Wei Li, Huifang Gao, and Yan Yao

Crystals 2022, 12, 256. https://doi.org/10.3390/cryst12020256

Evident Glass Relaxation at Room Temperature Induced by Size Effect 
Boyang Sun, Wenhui Cao, Zijian Wang, Baoan Sun, and Weihua Wang

Physical Review B. 2022 Jan 31;105(1):014110

Germanium thin film manufacturing using covalent bonding process 
K Abadie, F Fournel, C Morales, F Mazen, L Vignoud, J-P Colonna, and J Widiez 

Semiconductor Science and Technology, Volume 37, Number 4 (045012)

Data-driven discovery of a universal indicator for metallic glass forming ability 
Ming-Xing Li, Yi-Tao Sun, Chao Wang, Li-Wei Hu, Sungwoo Sohn, Jan Schroers, Wei-Hua Wang, & Yan-Hui Liu

Nature Materials 21, 165-172 (2022); https://doi.org/10.1038/s41563-021-01129-6

Thermal Annealing on the Soft Magnetism, Microwave Properties, and Magnetostriction in Co-Fe-C Alloy Films
Jiawei Wang, Yuyi Wei, Yifan He, Cunzheng Dong, Xianqing Lin, Huaihao Chen, Xianfeng Liang, Chengju Yu, Mingmin Zhu, Yi Zhang, Jun Ni, Nian X. Sun

Journal of Alloys and Compounds, Volume 874, 159783, 5 September 2021; https://doi.org/10.1016/j.jallcom.2021.159783

Plasma-assisted electron beam evaporation of low stress aluminium films for MEMS applications
Shreyas P. Bhat, Khawaja Nizammuddin Subhani, & Savitha Purakkat

ISSS Journal of Micro and Smart Systems 10, 33-39 (2021); 02 June 2021; https://doi.org/10.1007/s41683-021-00067-4

A Surface Micromachining: HNA Etchant for Stiction-free Release of Micro/Nanomechanical Structures
Bagur R. Deepu, Ponnusubramaniyam Venkatachalam, Fakirappa N. Mirji, Varghese Littin, Hebbal Naveen, Purakkat Savitha, Yeriyur B. Basavaraju

Materials Today Proceedings, Volume 42, Part 2, 2021, Pages 1218-1223; https://doi.org/10.1016/j.matpr.2020.12.862

Stress-induced Deformation of the Coating on Large Lightweight Freeform Optics
Guanbo Qiao, Haixiang Hu, Xuejun Zhang, xiao Luo, Donglin Xue, Ge Zhang, Haifei Hu, Liqi Yi, Yu Yang, and Weijie Dengxx

Optics Express Vol. 29, Issue 4, pp. 4755-4769 (2021); https://doi.org/10.1364/OE.414953

Fracture Properties of Thin Film TiN at Elevated Temperatures
J. Buchinger, L. Löfler, J. Ast, A. Wagner, Z. Chend, J. Michler, Z. L. Zhang, P.H. Mayrhofer, D. Holec, M. Bartosik

Materials & Design, Volume 194, September 2020, 108885; https://doi.org/10.1016/j.matdes.2020.108885

Thermomechanical Characterization of Polymer Thin Films. Application for the Conception and the Manufacturing of a 3D Interposer
Lionel Vignoud, Nicolas Assigbe, Christine Morin, Jérome DeChamp, Lucile Roulet

2019 International Wafer-Level Packaging Conference

Broadband High-Reflection Dielectric PVD Coating with Low Stress and High Adhesion on PMMA
Zizheng Li, Qiang Li, Xiangqian Quan, Xin Zhang, Chi Song, Haigui Yang, Xiaoyi Wang and Jinsong Gao

Coatings 2019, 9(4), 237 https://doi.org/10.3390/coatings9040237

Finite-Element-Method Study of the Effect of Thin-Film Residual Stresses on High-Order Aberrations of Deformable Mirrors
Yaoping Zhang, Guoyun Long, Hong Zhou, Junqi Fan, Hao Cui, Lin Cheng

Surface and Coatings Technology, Volume 366, 25 May 2019, Pages 35-40 https://doi.org/10.1016/j.surfcoat.2019.01.119

On the Properties of WC/SiC Multilayers
Mauro Prasciolu and Saša Bajt

Applied Sciences 2018, 8(4), 571; doi:10.3390/app8040571

The Advantages of Coupling Experimental Methods and Analytical Modelling to Fix Deformation Problems in Devices Conception and Manufacturing
Lionel VIGNOUD ; Christine MORIN ; Nicolas ASSIGBE ; Guillaume PARRY ; Rafael ESTEVEZ

2018 IEEE CPMT Symposium Japan (ICSJ) https://doi.org/10.1109/ICSJ.2018.8602522

Effect of Residual Gas on Structural, Electrical and Mechanical Properties of Niobium Films Deposited by Magnetron Sputtering Deposition
Lanruo Wang, Yuan Zhong, Jinjin Li, Wenhui Cao, Qing Zhong, Xueshen Wang, and Xu Li

Mater. Res. Express 5 (2018) 046410

Direct, CMOS In Line Process Flow Compatible, Sub 100 °C Cu–Cu Thermocompression Bonding Using Stress Engineering
Asisa Kumar Panigrahi, Tamal Ghosh, C. Hemanth Kumar, Shiv Govind Singh, Siva Rama Krishna Vanjari

Electronic Materials Letters (2018) 14:32 8–335

Structural and Magnetic Properties of Ultra-Thin Fe Films on Metal-Organic Chemical Vapour Deposited GaN(0001)
Jun-Young Kim, Adrian Ionescu, Rhodri Mansell, Ian Farrer, Fabrice Oehler, Christy J. Kinane, Joshaniel F. K. Cooper, Nina-Juliane Steinke, Sean Langridge, Romuald Stankiewicz, Colin J. Humphreys, Russell P. Cowburn, Stuart N. Holmes, and Crispin H. W. Barnes

Journal of Applied Physics 121, 043904 (2017); doi: 10.1063/1.4973956

Cyclic Mechanical Behavior of Thin Layers of Copper: A Theoretical and Numerical Study
Klaus Fellner, Thomas Antretter, Peter F Fuchs and Tiphaine Pélisset

J Strain Analysis, 2016, Vol. 51(2) 161-169

Thermal Conductivity of Sputtered Amorphous Ge Films
Zhan, Tianzhuo, Yibin Xu, Masahiro Goto, Yoshihisa Tanaka, Ryozo Kato, Michiko Sasaki, and Yutaka Kagawa

AIP Advances 4, no. 2 (2014): 027126

Passivation of AlGaN/GaN HEMT by Silicon Nitride
Dayal, S., Sunil Kumar, Sudhir Kumar, H. Arora, R. Laishram, R. K. Chaubey, and B. K. Sehgal

Physics of Semiconductor Devices, pp. 141-143. Springer International Publishing, 2014

Thermal Stability on Mo/B4C Multilayers
Barthelmess, Miriam, and Saša Bajt.

International Society for Optics and Photonics, 2011

GaN-Based LEDs Grown on 6-inch Diameter Si (111) Substrates by MOVPE
Zhu, D., C. McAleese, K. K. McLaughlin, M. Häberlen, C. O. Salcianu, E. J. Thrush, M. J. Kappers et al

SPIE OPTO: Integrated Optoelectronic Devices, pp. 723118-723118. International Society for Optics and Photonics, 2009

Effect of Crystallite Geometries on Electrochemical Performance of Porous Intercalation Electrodes by Multiscale Operando Investigation
Yuting Luo, Yang Bai, Aashutosh Mistry, Yuwei Zhang, Dexin Zhao, Susmita Sarkar, Joseph V. Handy, Shahed Rezaei, Andrew Chihpin Chuang, Luis Carrillo, Kamila Wiaderek, Matt Pharr, Kelvin Xie, Partha P. Mukherjee, Bai-Xiang Xu & Sarbajit Banerjee

Nature Materials 21, 217–227 (2022); https://doi.org/10.1038/s41563-021-01151-8

Growth design for high quality AlxGa (1− x) N layer with high AlN-fraction on Si (1 1 1) substrate by MOCVD
Abheek Bardhan, Srinivasan Raghav

Journal of Crystal Growth, Volume 578, 15 January 2022, 126418; ttps://doi.org/10.1016/j.jcrysgro.2021.126418

Reconfiguration of Amorphous Complex Oxides: A Route to a Broad Range of Assembly Phenomena, Hybrid Materials, and Novel Functionalities
Divya J. Prakash,Yajin Chen,Mengistie L. Debasu,Donald E. Savage,Chaiyapat Tangpatjaroen,Christoph Deneke,Angelo Malachias,Adam D. Alfieri,Omar Elleuch,Kaddour Lekhal,Izabela Szlufarska,Paul G. Evans,Francesca Cavallox

Nano Micro Small Volume 18, Issue 1, January 6, 2022 2105424; https://doi.org/10.1002/smll.202105424

Wafer-Scale Electroactive Nanoporous Silicon: Large and Fully Reversible Electrochemo-Mechanical Actuation in Aqueous Electrolytes
Manuel Brinker and Patrick Huber

Advanced Materials 2022, 34, 2105923; DOI: 10.1002/adma.202105923

Silicon Contamination of the Praseodymium Doped Ceria Oxygen Surfaced Exchange Coefficient
Yuxi Ma and Jason D. Nicholas

Journal of The Electrochemical Society 2021 168 104518

Negative Thermal Expansion HfV2O7 Nanostructures for Alleviation of Thermal Stress in Nanocomposite Coatings
Guan-Wen Liu, Yuwei Zhang, Melonie P. Thomas, Ahamed Ullah, Matt Pharr, Beth S. Guiton, and Sarbajit Banerjee

ACS Applied Materials & Interfaces 2021, 13, 37, 44723-44732; https://doi.org/10.1021/acsami.1c10867

The Effect of the Graded Bilayer Design on the Strain Depth Profiles and Microstructure of Cu/W Nano-multilayers
A.V. Druzhinin, G. Lorenzin, D. Ariosa, S. Siol, B.B. Straumala, J. Janczak-Rusch, L.P.H. Jeurgens, C. Cancellieri

Materials & Design 209 (2021) 110002; https://doi.org/10.1016/j.matdes.2021.110002

Chemo-Mechanics of Functional Thin Films for Lithium-ion Batteries and Neuromorphic Computing Devices
Yuwei Zhang

Thesis, Texas A&M University (2021)

Morpholical Effect on High Compaction Density Nickel-rich Layered Oxide Cathodes During Electrochemical Lithiation and Delithiation
Min Hou, Yiyang Hu, Meng Zhang, Dafu Chen, Hui Cao, Zhenbo Wang

Electrochimica Acta, Volume 377, 1 May 2021, 138118; https://doi.org/10.1016/j.electacta.2021.138118

Bending Good Beats Breaking Bad: Phase Separation Patterns in Individual Cathode Particles Upon Lithiation and Delithiation
David A. Santos, Justin L. Andrews, Yang Bai, Peter Stein, Yuting Luo, Yuwei Zhang, Matt Pharr, Bai-Xiang Xu, and Sarbajit Banerjee

Materials Horizons; 2020,7, 3275-3290; https://doi.org/10.1039/D0MH01240H

AlInAsSb Avalanche Photodiodes on InP Substrates
Kodati, S. H.; Lee, S.; Guo, B.; Jones, A. H.; Schwartz, M.; Winslow, M.; Pfiester, N. A.; Grein, C. H.; Ronningen, T. J.; Campbell, J. C.; Krishna, S.

Applied Physics Letters, Volume 118, Issue 9, article id.091101; https://doi.org/10.1063/5.0039399

The Microstructural and Stress Evolution in Sputter Deposited Ni Thin Films
Thomas Koenig, Zhaoxia Rao, Eric Chason, Garritt J. Tucker, Gregory B. Thompson

Surface and Coatings Technology Volume 412, 25 April 2021, 126973;https://doi.org/10.1016/j.surfcoat.2021.126973

Electrocatalytic Activity of Nanostructured Nickel Thin Film Electrodes During Oxygen and Hydrogen Evolution Reactions
Adeline Delvaux

Thesis 2020, UC Louvain

Measurement of Volume Changes and Associated Stresses in Ge Electrodes Due to Na/Na+ Redox Reactions
Subhajit Rakshit, Akshay S. Pakhare, Olivia Ruiz, M. Reza Khoshi, Eric Detsi, Huixin He, Vijay A. Sethuraman and Siva P. V. Nadimpalli

Journal of The Electrochemical Society 168 010504; https://doi.org/10.1149/1945-7111/abd5fc

Mechanical and Electrochemical Stability Improvement of SiC-Reinforced Silicon-Based Composite Anode for Li-Ion Batteries
Mohammad Furquan, Manoj K. Jangid, Anish Raj Khatribail, Savithri Vijayalakshmi, Amartya Mukhopadhyay, and Sagar Mitra

ACS Applied Energy Materials 2020, 3, 12, 12613–12626 https://doi.org/10.1021/acsaem.0c02523

In Situ and Real-Time Nanoscale Monitoring of Ultra-Thin Metal Film Growth Using Optical and Electrical Diagnostic Tools
Jonathan Colin, Andreas Jamnig, Clarisse Furgeaud, Anny Michel, Nikolaos Pliatsikas, Kostas Sarakinos , and Gregory Abadias

Nanomaterials 2020, 10(11), 2225; https://doi.org/10.3390/nano10112225

Stress-Free Titantium-based Thin Films for Inner Ear Microphones
Dina Ehsan

Linkoping University, Master's thesis 2020

Seeing is Believing: In Situ/Operando Optical Microscopy for Probing Electrochemical Energy Systems
Binbin Chen, Hao Zhang, Jin Xuan, Gregory J. Offer, and Huizhi Wang

Advanced Materials Technologies (23 August 2020); https://doi.org/10.1002/admt.202000555

Stress and Microstructure Evolution in Mo Thin Films Without or With cover Layers During Thermal-Cycling
Eunmi Park, Marietta Seifert, Gayatri K. Rane, Siegfried B. Menzel, Thomas Gemming and Kornelius Nielsch

Materials, September 2020; https://doi.org/10.3390/ma13183926

Stress Bearing Mechanisms of reduced Graphene Oxide in Silicon Based Composite Anodes for Lithium Ion Batteries
Mahmud TOKUR, Mok Yun Jin, Brian W. Sheldon, and Hatem Akbulut

ACS Applied Materials & Interfaces 2020, July 6; https://doi.org/10.1021/acsami.0c10064

Stress Buildup Upon Crystallization of GeTe Thin Films: Curvature Measurements and Modelling
Rajkiran Tholapi, Manon Gallard, Nelly Burle, Christophe Guichet,
Stephanie Escoubas, Magali Putero, Cristian Mocuta, Marie-Ingrid Richard,
Rebecca Chahine, Chiara Sabbione, Mathieu Bernard, Leila Fellouh, Pierre Noé and Olivier Thomas

Nanomaterials, 2020, 10, 1247 doi:10.3390/nano10061247

In-situ stress evolution and its correlation with structural characteristics of GaN buffer grown on Si substrate using AlGaN/AlN/GaN stress mitigation layers for high electron mobility transistor applications
R. Lingaparthi, N. Dharmarasu, K. Radhakrishnan, M. Agrawala

Thin Solid Films, Volume 708, 31 August 2020, 138128; https://doi.org/10.1016/j.tsf.2020.138128

Dislocation Plasticity and Detwinning Under Thermal Stresses in Nanotwinned Ag Thin Films
Maya K. Kini, Claudia Merola, Benjamin Breitbach, Dennis Klapproth, Bastian Philippi, Jean-Baptiste Molin, Christoph Kirchlechner, Gherard Dehm.

SSRN dx.doi.org/10.2139/ssrn.3591844

Effect of Substrate Transfer on Performance of Vertically Stacked Ultrathin MOS Devices
Pavani Vamsi Krishna Nittala, Krutikesh Sahoo, Navakanta Bhat, K.N. Bhat, Prosenjit Sen

IEEE Transactions on Electron Devices ( Volume: 66 , Issue: 3 , March 2019 )

Reduced Dislocation Density and Residual Tension in AlN Grown on SiC by Metalorganic Chemical Vapor Deposition
Christian J. Zollner, Abdullah Almogbel, Yifan Yao, Burhan K. SaifAddin, Feng Wu, Michael Iza, Steven P. DenBaars, James S. Speck, and Shuji Nakamura

Applied Physics Letters 115, 161101, 2019; https://doi.org/10.1063/1.5123623

Six-Junction III-V Solar Cells With 47.1% Conversion Efficiency Under 143 Suns Concentration
John F. Geisz, Ryan M. France, Kevin L. Schulte, Myles A. Steiner, Andrew G. Norman, Harvey L. Guthrey, Matthew R. Young, Tao Song, and Thomas Moriarty

Nature Energy, Volume 5, April 2020, 326-335 https://doi.org/10.1038/s41560-020-0598-5

Development of Residual Stress and Uniaxial Magnetic Anisotropy During Growth of Polycrystalline co Film
Arun Singh Dev, Dileep Kumar, Pooja Gupta, Pramod Vishwakarma, Ajay Gupta

Materials Research Bulletin 121 (2020) 110616 https://doi.org/10.1016/j.materresbull.2019.110616

The effect of kinetics on intrinsic stress generation and evolution in sputter-deposited films at conditions of high atomic mobility
A. Jamnig, N. Pliatsikas, K. Sarakinos, and G. Abadias

Journal of Applied Physics 127, 045302 (2020) https://doi.org/10.1063/1.5130148

Interfacial Silicide Formation and Stress Evolution During Sputter Deposition of Ultrathin Pd Layers on a-Si
Bärbel Krause, Gregory Abadias, Clarisse Furgeaud, Anny Michel, Andrea Resta, Alessandro Coati, Yves Garreau, Alina Vlad, Dirk Hauschild, Tilo Baumbach

ACS Applied Materials Interfaces, 2019,

An In Situ System for Simultaneous Stress Measurement and Optical Observation of Silicon Thin Film Electrodes
Jian Chen, Le Yang, Yu Han, Yin-Hua Bao, Kai-Lun Zhang, Xiang Li, Jing Pang, Hao-Sen Chen, Wei-Li Song,Yu-Jie Wei, Dai-Ning Fang

Journal of Power Sources, Volume 444, 31 December 2019, 227227; https://doi.org/10.1016/j.jpowsour.2019.227227

Real-Time Monitoring of Stress Development During Electrochemical Cycling of Electrode Materials for Li-Ion Batteries: Overview and Perspectives
Manoj K. Jangid and Amartya Mukhopadhyay

J. Mater. Chem. A, 2019,7, 23679-23726; https://doi.org/10.1039/C9TA08936E

Development of Residual Stress and Uniaxial Magnetic Anisotropy During Growth of Polycrystalline Co Filmx
Arun Singh Dev, Dileep Kumar, Pooja Gupta, Pramod Vishwakarma, Ajay Gupta

Materials Research Bulletin, Volume 121, January 2020, 110616; https://doi.org/10.1016/j.materresbull.2019.110616

On the Determination of Alloy Composition Using Optical Spectroscopy in MOVPE Grown InGaN Layers on Si(111)
Vikash K. Singh, Payal Taya, Dipankar Jana, RenuTyagi, S. Raghavan, T. K. Sharmac

Superlattices and Microstructures, Volume 134, October 2019, 106234; https://doi.org/10.1016/j.spmi.2019.106234

Direct Observation of the Thickness-Induced Crystallization and Stress Build-Up During Sputter-Deposition of Nanoscale Silicide Films
Bärbel Krause, Gregory Abadias, Anny Michel, Peter Wochner, Shyjumon Ibrahimkutty, and Tilo Baumbach

ACS Applied Materials & Interfaces 2016 8 (50), 34888-34895; https://doi.org10.1021/acsami.6b12413

Chemo-Mechanical Degradation in V2O5 Thin Film Cathodes of Li-ion Batteries During Electrochemical Cycling
Yuwei Zhang, Yuting Luo, Cole Fincher, Sarbajit Banerjee, Matt Pharr

Journal of Materials Chemistry A (Accepted 9th July 2019); https://doi.org/10.1039/c9ta05243g

Atomic-Scale Diffusion Rates During Growth of Thin Metal films on Weakly-Interacting Substrates
A. Jamnig, D. G. Sangiovanni, G. Abadias & K. Sarakinos

Scientific Reports 9, Article number: 6640 (2019). https://doi.org/10.1038/s41598-019-43107-8

Tuning High Power Impulse Magnetron Sputtering Discharge and Substrate Bias Conditions to Reduce the Intrinsic Stress of TiN Thin Films
Felipe Cemin, Gregory Abadias, Tiberiu Minea, Daniel Lundin

Thin Solid Films https://doi.org/10.1016/j.tsf.2019.05.054

Stress-charge coupling coefficient for thin-film polypyrrole actuators – Investigation of capacitive ion exchange in the oxidized state
Benedikt Roschning, Jörg Weissmüller

Electrochimica Acta (Volume 318, 20 September 2019, Pages 504-512). https://doi.org/10.1016/j.electacta.2019.05.166

In-Operando Imaging of Polysulfide Catholytes for Li–S Batteries and Implications for Kinetics and Mechanical Stability
Yuwei Zhang, Coleman Fincher, Scott McProuty, Matt Pharr

Journal of Power Sources (Volume 434, 15 September 2019). https://doi.org/10.1016/j.jpowsour.2019.226727

Enhanced Properties of Tungsten Films by High-Power Impulse Magnetron Sputtering
A.M.Engwall, S.J.Shin, J.Bae, Y.M.Wang

Surface and Coatings Technology, Volum 363, 15 April 2019, Pages 191-197 https://doi.org/10.1016/j.surfcoat.2019.02.055

GaN Heteroepitaxy on Strain-Engineered (111) Si/Si1−xGex
Anushka Bansal, Nathan C. Martin, Ke Wang, Joan M. Redwing

Journal of Elec Materi (2019) 48: 3355. https://doi.org/10.1007/s11664-019-07031-x

Long Range, Non-Destructive Characterization of GaN Substrates for Power Devices
J.C. Gallagher, T.J. Anderson, L.E. Luna, A.D. Koehler, J.K. Hite, N.A. Mahadik, K.D. Hobart, F.J. Kub

Journal of Crystal Growth, Volume 506, 15 January 2019, Pages 178-184

The Influence of Alloying Interactions On Thin Film Growth Stresses
XuyangZhou, Gregory B.Thompson

Applied Surface Science, Volume 463, 1 January 2019, Pages 545-555; https://doi.org/10.1016/j.apsusc.2018.08.212

Fabrication and Characterization of SU-8-Based Capacitive Micromachined Ultrasonic Transducer for Airborne Applications
Jose Joseph, Shiv Govind Singhm, Siva Rama Krishna Vanjari

J. of Micro/Nanolithography, MEMS, and MOEMS, 17(1), 015003 (2018); https://doi.org/10.1117/1.JMM.17.1.015003

Dislocation Bending and Stress Evolution in Mg-Doped GaN Films on Si Substrates
Rohith Soman, Nagaboopathy Mohan, Hareesh Chandrasekar, Navakanta Bhat, and Srinivasan Raghavan

Journal of Applied Physics 124, 245104 (2018) https://doi.org/10.1063/1.5063420

Stresses in Thin Films: an Experimental Study
N. Sharma, M. Hooda, S. K. Sharma

Indian J Phys (2018) https://doi.org/10.1007/s12648-018-1281-6

Tailoring Structural and Energy-Related Properties of Thin Films Using HiPIMS
Felipe Cemin

Thesis – University Paris-Saclay, 2018

Mechanics of Electrodes in High Capactiy Lithium-Ion Batteries
Garrett Ransford Hardin 

Thesis - Master of Science, Texas A&M, August 2018

Qualification of Silicon Based Oxide and Nitride Films for Metal-Insulator-Metal Capacitors
N. Sharma, M. Hooda, and S. K. Sharma

Mater. Express, Vol. 8, No. 3, 2018 doi:10.1166/mex.2018.1436

In-situ measurements of stress evolution in composite sulfur cathodes
Yuwei Zhang, Yuting Luo, Coleman Fincher, Scott McProuty, Garrett Swenson, Sarbajit Banerjee, Matt Pharr

https://doi.org/10.1016/j.ensm.2018.10.001

The Influence of Deposition Parameters on the Stress Evolution of Sputter Deposited Copper
Tyler Kaub, Zhaoxia Rao, Eric Chason, Gregory B. Thompson

Surface and Coatings Technology Volume 357, 15 January 2019, Pages 939-946 https://doi.org/10.1016/j.surfcoat.2018.10.059

Fabrication of Micro-Nano-Mechanical Structures For Sensing Application
N Sharma, M Hooda, S K Sharma

International Journal of Applied Engineering Research ISSN 0973-4562 Volume 13, Number 8 (2018) pp. 6388-6393

In Situ Monitoring of Stress Change in GeTe Thin Films During Thermal Annealing and Crystallization
B. Ben Yahia, M.S. Amara, M. Gallard, N. Burle, S. Escoubas, C. Guichet, M. Putero, C. Mocuta, M.-I. Richard, R. Chahine, C. Sabbione, M. Bernard, L. Fellouh, P. Noé, O. Thomas

https://doi.org/10.1016/j.mne.2018.10.001

The Influence of Alloying Interactions on Thin Film Growth Stresses
X. Zhou, G.B. Thompson

Applied Surface Science (2018), doi: https://doi.org/10.1016/j.apsusc.2018.08.212

The Role of Surface Roughness on Dislocation Bending and Stress Evolution in Low Mobility AlGaN Films During Growth
Abheek Bardhan, Nagaboopathy Mohan, Hareesh Chandrasekar, Priyadarshini Ghosh, D.V.Sridhara Rao and Srinivasan Raghavan

Journal of Applied Physics 123, 165108 (2018); https://doi.org/10.1063/1.5005080

In Situ Measurement of the Effect of Stress on the Chemical Diffusion Coefficient of Li in High-Energy-Density Electrodes
Rajasekhar Tripuraneni, Subhajit Rakshit, and Siva P. V. Nadimpalli

Journal of The Electrochemical Society, 165 (10) A2194-A2202 (2018)

Real-Time Stress Measurement in SiO2 Thin Films During Electrochemical Lithiation/Delithiation Cycling
Rakshit, S., Tripuraneni, R. & Nadimpalli

S.P.V. Exp Mech (2018) 58: 537; https://doi.org/10.1007/s11340-017-0371-2

Impact of Ge Alloying on the Early Growth Stages, Microstructure and Stress Evolution of Sputter-Deposited Cu-Ge Thin Films
C.Furgeaud, L.Simonot, A.Michel, C.Mastail, G.Abadias

Acta Materialia, Volume 159, 15 October 2018, Pages 286-295; https://doi.org/10.1016/j.actamat.2018.08.019

Evolution of In Situ Growth Stresses and Interfacial Structure in Phase Changing Cu/V Multilayered Thin Films
Qianying Guo, Gregory B.Thompson

Acta Materialia, Volume 148, 15 April 2018, Pages 63-71; https://doi.org/10.1016/j.actamat.2018.01.023

Stress in Thin Films and Coatings: Current Status, Challenges, and Prospects
Grégory Abadias, Eric Chason, Jozef Keckes, Marco Sebastiani, Gregory B. Thompson, Etienne Barthel, Gary L. Doll, Conal E. Murray, Chris H. Stoessel, and Ludvik Martinu

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 36, 020801 (2018); doi:10.1116/1.5011790

Composition, Microstructure, and Electrical Performance of Sputtered SnO Thin Films for p-Type Oxide Semiconductor
Seung Jun Lee, Younjin Jang, Han Joon Kim, Eun Suk Hwang, Seok Min Jeon, Jun Shik Kim, Taehwan Moon, Kyung-Tae Jang, Young-Chang Joo, Deok-Yong Cho, and Cheol Seong Hwang

ACS Applied Materials & Interfaces 2018 10 (4), 3810-3821 ; DOI: 10.1021/acsami.7b17906

Fracture Toughness of Mo2BC Thin Films: Intrinsic Toughness Versus System Toughening
R. Soler, S. Gleich, C. Kirchlechner, C. Scheu, J.M. Schneider, G. Dehm

Materials and Design 154 (2018) 20–27

Stress Generation and Evolution in Oxide Hheteroepitaxy
Aline Fluri, Daniele Pergolesi, Alexander Wokaun, and Thomas Lippert

Phys. Rev. B 97, Iss. 12 — 15 March 2018; https://doi.org/10.1103/PhysRevB.97.125412

The Effect of Water Vapor on Nanosecond Laser Damage Resistance of Optical Coatings in Vacuum
Xiulan Ling, Shenghu Liu, Xiaofeng Liu

Optik 164 (2018) 654–660

Benefits of Energetic Ion Bombardment for Tailoring Stress and Microstructural Evolution During growth of Cu Thin Films
Felipe Cemin, Gregory Abadias, Tiberiu Minea, Clarisse Furgeaud, François Brisset, Denis Solas , Daniel Lundin

Acta Materialia 141 (2017) 120e130; https://doi.org/10.1016/j.actamat.2017.09.007

Stress Evolution in SiO Electrodes for Lithium-Ion Batteries During Electrochemical Cycling
Jingze Zhang, Jian Zhang, Di Wang, Xiaohua Xie and Baojia Xia

Material Letters 190 (2017) 79-82 https://doi.org/10.1016/j.matlet.2016.12.141

An Experimental Study of Residual Stress Induced Modulation of Vibration Characteristics in 1-D MEMS Resonators
Behera, A., Dangi, A., and Pratap, R.

Materials Performance and Characterization, https://doi.org/10.1520/MPC20170156. ISSN 2379-1365.

Electrochemical and Stress Characteristics of SiO/Cu/Expanded Graphite Composite as Anodes for Lithium Ion Batteries
Jingze Zhang, Jian Zhang, Tianzeng Bao, Xiaohua Xie and Baojia Xia

Journal of Power Sources 348 (2017) 16-20 https://doi.org/10.1016/j.jpowsour.2017.02.076

Substrate-Influenced Thermo-Mechanical Fatigue of Copper Metallizations: Limits of Stoney’s Equation
Stephan Bigl , Stefan Wurster, Megan J. Cordill and Daniel Kiener

Materials 2017, 10(11), 1287; doi:10.3390/ma10111287

Mechanisms of Power Module Source Metal Degradation During Electro-Thermal Aging
Roberta Ruffilli, Mounira Berkani, Philippe Dupuy, Stephane Lefebvre, Yann Weber, Marc Legros

Microelectronics Reliability, Elsevier, 2017, 76-77, pp.507 – 511

Measurements of the Phase and Stress Evolution during Initial Lithiation of Sn Electrodes
Chun-Hao Chen, Eric Chason, and Pradeep R. Guduru

Journal of The Electrochemical Society, 164 (4) A574-A579 (2017)

Influence of HVPE Substrates on Homoepitaxy of GaN Grown by MOCVD
J.K. Hite, T.J. Anderson, L.E. Luna, J.C. Gallagher, M.A. Mastro, J.A. Freitas, C.R. Eddy Jr.

Journal of Crystal Growth 498 (2018) 352–356

Substrate-Influenced Thermo-Mechanical Fatigue of Copper Metallizations: Limits of Stoney’s Equation
Stephan Bigl, Stefan Wurster, Megan J. Cordill and Daniel Kiener

Materials 2017, 10, 1287

Film Thickness Dependent Microstructural Changes of Thick Copper Metallizations Upon Thermal Fatigue
Stephan Bigl, Claus O.W. Trost, Stefan Wurster, Megan J. Cordill and Daniel Kiener

Journal of Materials Research, Volume 32, No. 1, June 14, 2017, pp. 2022-2034

Effect of Intrinsic Stress on Structural and Optical Properties of Amorphous Si-Doped SnO2 Thin-Film
Honglong Ning, Xianzhe Liu, Hongke Zhang, Zhiqiang Fang, Wei Ca, Jianqiu Chen, Rihui Yao, Miao Xu, Lei Wang, Linfeng Lan, Junbiao Peng, Xiaofeng Wang and Zichen Zhang

Materials 2017, 10, 24

In Situ Stress Observation in Oxide Films and How Tensile Stress Influences Oxygen Ion Conduction
Aline Fluri, Daniele Pergolesi, Vladimir Roddatis, Alexander Wokaun and Thomas Lippert

Nature Communications 10.1038/ncomms10692 (2016)

Volmer-Weber Growth Stages of Polycrystalline Metal Films Probed by In Situ and Real-Time Optical Diagnostics.
G. Abadias, L. Simonot, J.J. Colin, A. Michel, S. Camelio, and D. Babonneau

Appl. Phys. Lett. 107, 183105 (2015)

Porous Thick Film Lanthanum Strontium Ferrite Stress and Oxygen Surface Exchange Bilayer Curvature Relaxation Measurements
Qing Yang and Jason D. Nicholas

Journal of The Electrochemical Society, 161 (11) F3025-F3031 (2014)

In Situ Measurement of CuPt Alloy Ordering Using Strain Anisotropy
Ryan M. France, William E. McMahon, Joongoo Kang, Myles A. Steiner, and John F. Geisz

Journal of Appl. Physics, 115, 053502, 2014

In Situ Oxygen Surface Exchange Coefficient Measurements on Lanthanum Strontium Ferrite Thin Films Via the Curvature Relaxation Method
Qing Yang, Theodore E. Burye, Richard R. Lunt, and Jason D. Nicholas

Solid State Ionics 249–250 (2013) 123–128

In Situ Combined Synchrotron X-Ray Diffraction and Wafer Curvature Measurements During Formation of Thin Palladium Silicide Film on Si(001) and Si(111)
J. Fouet, M.I. Richard, C. Mocuta, C. Guichet, O. Thomas

Nuclear Instruments and Methods in Physics Research, B 284 (2012), pp 74-77

In Situ Stress Evolution During Growth of Transition Metal Nitride Films and Nanocomposites
G. Abadias, L.E. Koutsokeras, P.A. Patsalas, W. Leroy, D. Delpa, S.V. Zlotsi, V.V. Uglov

Nanomaterials: Applications and Properties (NAP-2011). Vol.1, PartII

In Situ Measurement of Biaxial Modulus of Si Anode for Li-ion Batteries
V.A. Sethuraman, M.J. Chon, M. Shimshak, N. Van Winkle, P.R. Guduru

Electrochemistry Communications, 12(11), 1614-1617 2010

In Situ Measurement of the Internal Stress Evolution During Sputter Deposition of ZnO:Al
S. Michotte, J.Proost

Solar Energy Materials & Solar Cells 98 (2012) 253–259

Periodic Variation of Stress in Sputter Deposited Si/WSi2 Multilayers
Kimberly MacArthur, Bing Shi, Ray Conley and Albert T. Macrander

Applied Physics Letters 99, 081905 (2011)

On the use of a Multiple Beam Optical Sensor for In Situ Curvature Monitoring in Liquids
Q. Van Overmeere, J.-F. Vanhumbeeck, and J. Proost

Review of Scientific Instruments 81, 045106, 2010

The NSLS-II Multilayer Laue Lens Deposition System
Ray Conley, Nathalie Bouet, James Biancarosa, Qun Shen, Larry Boas, John Feraca, Leonard Rosenbaum

SPIE 2009

Effects of a Compositionally Graded Buffer Layer on Stress Evolution During GaN and AlxGa1−xN MOCVD on SiC Substrates
Jeremy D. Acord, Xiaojun Weng, Elizabeth C. Dickey, David W. Snyder, Joan M. Redwing

Journal of Crystal Growth 310 (7-9), 2314-2319, 2008; https://doi.org/10.1016/j.jcrysgro.2007.11.153

Correlation of Growth Stress and Structural Evolution During Metalorganic Chemical Vapor Deposition of GaN on (111) Si
Srinivasan Raghavan, Xiaojun Weng, Elizabeth Dickey, and Joan M. Redwing, Department of Materials Science and Engineering, Materials Research Institute, The Pennsylvania State University

Appl. Phys. Lett. Vol. 88, 041904, 2006

Growth stresses and cracking in GaN films on (111) Si grown by metal-organic chemical vapor deposition. I. AlN buffer layers
Srinivasan Raghavan and Joan Redwing Department of Materials Science and Engineering, Materials Research Institute, The Pennsylvania State University

Journal of Appl. Physics, 98, 023514, 2005

Evolution of Surface Morphology and Film Stress During MOCVD Growth of InN on Sapphire Substrates
Abhishek Jain, Srinivasan Raghavan, Joan M. Redwing, Department of Materials Science and Engineering, Materials Research Institute, The Pennsylvania State University

Journal of Crystal Growth 269 128-133, 2004

In Situ Stress Measurements During MOCVD Growth of AlGaN on SiC
Jeremy D. Acord, Srinivasan Raghavan, David W. Snyder, Joan M. Redwing, Materials Research Institute and Applied Research Laboratory, The Pennsylvania State University

Journal of Crystal Growth 272, 65-71, 2004

Effect of AlN Interlayers on Growth Stress in GaN Layers Deposited on (111) Si
Srinivasan Raghavan, Xiaojun Weng, Elizabeth Dickey, and Joan M. Redwing, Department of Materials Science and Engineering, Materials Research Institute, The Pennsylvania State University

Appl. Phys. Lett. Vol. 87, 142101 2005

Real-Time Strain Evolution During Growth of InxAl1-xAs/GaAs Metamorphic Buffer Layers
C. Lynch, R. Beresford, and E. Chason, Brown University

J. Vac. Sci. Technol. B 22, 1539 2004

The Effect of Thermal Gradients on SiC Wafers
Christer Hallin, Torbjörn Joelsson, Erik Janzén

Material Science Forum, ISSN: 1662-9752, Vols. 433-436, pp 193-196, 2003; https://doi.org/10.4028/www.scientific.net/MSF.433-436.193

Evolution of the Growth Stress, Stiffness, and Microstructure of Alumina Thin Films During Vapor Deposition
Joris Proost and Frans Spaepen, Harvard University

Journal of Appl. Phys., Vol. 91, No. 1, 1 Jan. 2002

Intrinsic Stress Development in Ti-C:H Ceramic Nanocomposite Coatings
B. Shi and W. J. Meng – Louisiana State University

L. E. Rehn and P. M. Baldo – Argonne National Laboratory

Appl. Phys. Lett., Vol. 81, No.2, 8 July 2002

Stress Evolution During Metalorganic Chemical Vapor Deposition of GaN
S. Hearne, E. Chason, J. Han, J. A. Floro, J. Figiel, and J. Hunter, H. Amano, I. S. T. Tsong

Appl. Phys. Lett. Vol. 74, no. 3, 1999

Stress Evolution in Sputtered FCC Metal Multilayers
Vidya Ramaswamy, William D. Nix, and Bruce M. Clemens

Stanford University

Stress Evolution During Growth of Sputtered Ni/Cu Multilayers
Vidya Ramaswamy, Bruce M. Clemens, and William D. Nix

Stanford University 1997

Stress and Defect Control in GaN Using Low Temperature Interlayers
Hiroshi Amano, Motoaki Iwaya, Takayuki Kashima, Maki Katsuragawa, Isamu Akasaki, Jung Han, Sean Hearne, Jerry A. Floro, Eric Chason and Jeffrey Figiel

Appl. Phys. Part.1, Vol. 37, no.12B, 1998

Real Time Measurement of Epilayer Strain Using a Simplified Water Curvature Technique
J. A. Floro, E. Chason, and S. R. Lee

Sandia National Laboratories 1996

Measuring Ge Segregation by Real-Time Stress Monitoring During Si 1-xGe x Molecular Beam Epitaxy
J. A. Floro and E. Chason

Appl. Phys. Lett 69, 1996 (p. 3830)

Growth of PbTe Nanowires by Molecular Beam Epitaxy
Sander G. Schellingerhout, Eline J. de Jong, Maksim Gomanko, Xin Guan, Yifan Jiang, Max S.M. Hoskam,
Sebastian Koelling, Oussama Moutanabbir, Marcel A. Verheijen, Sergey M. Frolov, Erik P.A.M. Bakkers

2022 Mater. Quantum. Technol. 2 015001

Consideration of the Intricacies Inherent in Molecular Beam Epitaxy of the NaCl/GaAs System
Brelon J. May, Jae Jin Kim, Patrick Walker, William E. McMahon, Helio R. Moutinho, Aaron J. Ptak, David L. Young

arXiv preprint arXiv:2202.04758 (2022)

Molecular Beam Epitaxy of GaAs Templates On Water Soluble NaCl Thin Films
Brelon J. May, Jae Jin Kim, Patrick Walker, Helio R. Moutinho, William E. McMahon, Aaron J. Ptak, David L.Young

Journal of Crystal Growth, Volume 586, 15 May 2022, 126617; https://doi.org/10.1016/j.jcrysgro.2022.126617

AlInAsSb Avalanche Photodiodes on InP Substrates
Kodati, S. H.; Lee, S.; Guo, B.; Jones, A. H.; Schwartz, M.; Winslow, M.; Pfiester, N. A.; Grein, C. H.; Ronningen, T. J.; Campbell, J. C.; Krishna, S.

Applied Physics Letters, Volume 118, Issue 9, article id.091101; https://doi.org/10.1063/5.0039399

The Microstructural and Stress Evolution in Sputter Deposited Ni Thin Films
Thomas Koenig, Zhaoxia Rao, Eric Chason, Garritt J. Tucker, Gregory B. Thompson

Surface and Coatings Technology Volume 412, 25 April 2021, 126973;https://doi.org/10.1016/j.surfcoat.2021.126973

Large Tunable Bandgaps in the InAs/AlAs Strain-compensated Short-period Superlattices Grown by Molecular Beam Epitaxy
Jinshan Yao, Rui Pan, Wenyang Wang, Chen Li, Baile Chen, Hong Lu, and Yan-Feng Chen

Appl. Phys. Lett. 118, 252103 (2021); https://doi.org/10.1063/5.0054850

GaAs Substrate Recycling Using in-situ Deposited NaCl Layers via Molecular Beam Epitaxy
B. J. May, J. J. Kim, A. J. Ptak and D. L. Young

2020 47th IEEE Photovoltaic Specialists Conference (PVSC), Calgary, OR, 2020, pp. 0470-0472, doi: 10.1109/PVSC45281.2020.9300960

Epitaxial III-V-Bismide Materials for Space Power Generation
Margaret A. Stevens

Thesis, Tufts University, August 2020

Band Edge Thermometry for the MBE Growth of (Hg,Cd)Te-Based Materials
R. Schlereth, J. Hajer, L. Fürst, S. Schreyeck, H. Buhmann, L.W. Molenkamp

Journal of Crystal Growth 537 (2020) 125602; https://doi.org/10.1016/j.jcrysgro.2020.125602

Room-Temperature Photoluminescence and Electroluminescence of 1.3-μm-Range BGaInAs Quantum Wells on GaAs Substrates
R. H. El-Jaroudi, K. M. McNicholas, A. F. Briggs, S. D. Sifferman, L. Nordin, and S. R. Bank

Applied Physics Letters 117, 021102 (2020); https://doi.org/10.1063/5.0011147

Electrical and Optical Characterisation of Low Temperature Grown InGaAs for Photodiode Applications
Leh Woon Lim, Pallavi Patil, Igor P Marko, Edmund Clarke, Stephen J Sweeney, Jo Shien Ng, John P R David, and Chee Hing Tan

Semiconductor Science and Technology 35 (2020) 095031; https://doi.org: 10.15131/shef.data.12562346.v1

Polarization Dependent Photoluminescence and Optical Anisotropy in CuPtB-Ordered Dilute GaAs1-XBix Alloys
Tadas Paulauskas, Bronislovas Čechavičius, Vytautas Karpus, Lukas Jočionis, Saulius Tumėnas, Jan Devenson, Vaidas Pačebutas, Sandra Stanionytė, Viktorija Strazdienė, Andrejus Geižutis, Mária Čaplovičová, Viliam Vretenár, Michael Walls, and Arūnas Krotkus

Journal of Applied Physics 128, 195106 (2020); https://doi.org/10.1063/5.0030091

Characterization of Tellurium and Silicon as n-type dopants for GaAsBi
Margaret A. Stevens, Samuel Lenney, John McElearney, Kevin A. Grossklaus, and Thomas E. Vandervelde

2020 Semicond. Sci. Technol.; https://doi.org/10.1088/1361-6641/aba08e

Atomic-Resolution EDX, HAADF, and EELS Study of GaAs1-xBix Alloys
Tadas Paulauskas, Vaidas Pačebutas, Renata Butkutė, Bronislovas Čechavičius, Arnas Naujokaitis, Mindaugas Kamarauskas, Martynas Skapas, Jan Devenson, Mária Čaplovičová, Viliam Vretenár, Xiaoyan Li, Mathieu Kociak, and Arūnas Krotkus

Paulauskas et al. Nanoscale Research Letters (2020) 15:121; https://doi.org/10.1186/s11671-020-03349-2

Growth-Induced Temperature Changes During Transition Metal Nitride Epitaxy on Transparent SiC Substrates
Douglas Scott Katzer, Matthew T. Hardy, Neeraj Nepal, Brian P. Downey, Eric N. Jin, and David J. Meyer

J. Vac. Sci. Technol. B 38, 032204 (2020) https://doi.org/10.1116/6.0000063

Mid-Infrared Electroluminescence From Type-II In(Ga)Sb Quantum Dots
Andrew F. Briggs, Leland J. Nordin, Aaron J. Muhowski, Priyanka Petluru, David Silva, Daniel Wasserman, and Seth R. Bank

Applied Phyiscs Letters 116, 061103 (2020) https://doi.org/10.1063/1.5134808

MBE Growth and Characterization of Strained HgTe (111) Films on CdTe/GaAs
Jian Zhang, Shengxi Zhang, Xiaofang Qiu, Yan Wu, Qiang Sun, Jin Zou, Tianxin Li, Pingping Chen

China Physics Letters, Vol. 37, No. 3 (2020) 038101 https://doi.org/10.1088/0256-307X/37/3/038101

Strain Stabilization of Far From Equilibrium GaAsBi Films
Margaret A. Stevens, Kevin A. Grossklaus, Thomas E. Vandervelde

Journal of Crystal Growth, Volume 527, 1 December 2019, 125216; https://doi.org/10.1016/j.jcrysgro.2019.125216

Separate Control of Number Density and Size of ErAs Nanoparticles by a Modified Diffusion Length Process Using Two Flux Conditions During Molecular Beam Epitaxy
Yuanchang Zhang, Kurt G. Eyink, Madelyn Hill, Brittany Urwin, Krishnamurthy Mahalingam

Thin Solid Films, Volume 692, 31 December 2019; https://doi.org/10.1016/j.tsf.2019.137586

Links Between Bismuth Incorporation and Surface Reconstruction During GaAsBi Growth Probed by In Situ Measurements
Cornille, A. Arnoult, Q. Gravelier, and C. Fontaine

J. Appl. Phys. 126, 093106 (2019); https://doi.org/10.1063/1.5111932

Superconducting Proximity Effect in InAsSb Surface Quantum Wells With In Situ Al Contact
William Mayer, William F. Schiela, Joseph Yuan, Mehdi Hatefipour, Wendy L. Sarney, Stefan P. Svensson, Asher C. Le, Tiago Campos, Kaushini S. Wickramasinghe, Matthieu C. Dartiailh, IgorZuticc, and Javad Shabani

arXiv:1909.12571 [cond-mat.mes-hall]

In Situ Band-Edge Monitoring of Cd1−yZnyTe Substrates for Molecular Beam Epitaxy of HgCdTe
Jacobs, R.N., Pinkie, B., Arias, J. et al.

Journal of Elec Materi (2019). https://doi.org/10.1007/s11664-019-07354-9

Spin Generation in Completely MBE Grown Co2FeSi/MgO/GaAs Lateral Spin Valves
Georg Hoffmann, Jens Herfort, Manfred Ramsteiner

arXiv.org (20 June 2019) Cornell University arXiv:1906.08661v1 [cond-mat.mes-hall]

Molecular Beam Epitaxy Growth of InAs/AlSb Superlattices on GaAs Substrates
D. Benyahia, Ł. Kubiszyn, K .Michalczewski, A. Kębłowski, K. Grodecki, P. Martyniuk

Journal of Crystal Growth https://doi.org/10.1016/j.jcrysgro.2019.06.013

Microstructural Evolution of High Quality AlN Grown by PAMBE Under Different Growth Conditions
Neha Aggarwal, Shibinv Krishna, Shubhendra Kumar Jain, Monu Mishra, K.K. Maury, Sandeep Singh, Mandeep Kaur, Govind Gupta

Materials Science and Engineering: B, Volume 243, April 2019, Pages 71-77 https://doi.org/10.1016/j.mseb.2019.03.020

Unusual Step Meandering Due to Ehrlich-Schwobel Barrier in GaN Epitaxy on the N-polar Surface
Henryk Turski, Filip Krzyżewski, AnnaFeduniewicz-Żmuda, Pawel Wolny, Marcin Siekacz, Grzegorz Muziol, Caroline Cheze, Krzesimir Nowakowski-Szukudlarek, Huili Grace Xing, Debdeep Jena, Magdalena Zaluska-Kotur, Czeslaw Skierbiszewski

Applied Surface Science, 9 April 2019 https://doi.org/10.1016/j.apsusc.2019.04.082

Impact on Photon-Assisted Charge Carrier Transport by Engineering Electrodes of GaN Based UV Photodetectors
Neha Aggarwal, Shibin Krishna, Shubhendra Kumar Jain, Arzoo Arora, Lalit Goswami, Alka Sharma, Sudhir Husale, Abhiram Gundimeda, Govind Gupta

Journal of Alloys and Compounds https://doi.org/10.1016/j.jallcom.2019.01.198

Epitaxial Growth of Co2FeSi/MgO/GaAs (001) Heterostructures Using Molecular Beam Epitaxy
G. Hoffmann, B. Jenichen, J. Herfort

Journal of Crystal Growth https://doi.org/10.1016/j.jcrysgro.2019.02.029

Influence of Temperature and Al/N Ratio on Structural, Chemical & Electronic Properties of Epitaxial AlN Films Grown Via PAMBE
Shubhendra Kumar Jain, Monu Mishra, Neha Aggarwal, Shibin Krishna, Bhasker Gahtori, Akhilesh Pandey, Govind Gupta

Applied Surface Science, Volume 455, 15 October 2018, Pages 919-923

Single-Photon Detectors Integrated in Quantum Photonic Circuits
Digeronimo, G.E.

Digeronimo, G.E. (2018); Eindhoven: Technische Universiteit Eindhoven

Terahertz Excitation Spectra of GaAsBi Alloys
V Pačebutas, S Stanionytė, A Arlauskas, R Norkus, R Butkutė, A Geižutis, B Čechavičius and A Krotkus

2018 J. Phys. D: Appl. Phys. 51 474001; https://doi.org/10.1088/1361-6463/aadb11

Kinetically Controlled Dewetting of Thin GaAs Cap From an ErAs/GaAs Nanoparticle Composite Layer
Yuanchang Zhang, Kurt G. Eyink, Brittany Urwin, Krishnamurthy Mahalingam, Madelyn R. Hill, and Larry Grazulis

Journal of Vacuum Science & Technology B 36, 041801 (2018) https://doi.org/10.1116/1.5030864

Influence of Solute Partitioning on the Microstructure and Growth Stresses in Nanocrystalline Fe(Cr) Thin Films
Xuyang Zhou, Gregory B.Thompson

Thin Solid Films, Volume 648, 28 February 2018, Pages 83-93 https://doi.org/10.1016/j.tsf.2018.01.007

Chapter 30 – Mass Production of Optoelectronic Devices
Roland Jäger

Molecular Beam Epitaxy (Second Edition): From Research to Mass Production 2018, Pages 677-692 https://doi.org/10.1016/B978-0-12-812136-8.00032-3

Effects of In Situ UV Irradiation on the Uniformity and Optical Properties of GaAsBi Epi-Layers Grown by MBE
Daniel A. Beaton, M. Steger, T. Christian, A. Mascarenhas

Journal of Crystal Growth, Volume 484, 15 February 2018, Pages 7-11 https://doi.org/10.1016/j.jcrysgro.2017.12.026

Ultra-Short Period Ga-free Superlattice Growth on GaSb
W. L. Sarney, S. P. Svensson, M. K. Yakes, Y. Xu, D. Donetsky, and G. Belenky

Journal of Applied Physics 124, 035304 (2018) https://doi.org/10.1063/1.5029328

Toward Deterministic Construction of Low Noise Avalanche Photodetector Materials
A. K. Rockwell, M. Ren, M. Woodson, A. H. Jones, S. D. March, Y. Tan, Y. Yuan, Y. Sun, R. Hool, S. J. Maddox, M. L. Lee, A. W. Ghosh, J. C. Campbell, and S. R. Bank

Appl. Phys. Lett. 113, 102106 (2018) doi: 10.1063/1.5040592

Revealing the Hidden Heavy Fermi Liquid in CaRuO3
Yang Liu, Hari P. Nair, Jacob P. Ruf, Darrell G. Schlom, and Kyle M. Shen

Phys. Rev. B 98, 041110(R) – Published 25 July 2018 https://doi.org/10.1103/PhysRevB.98.041110

Growth Rate Independence of Mg Doping in GaN Grown by Plasma-Assisted MBE
Henryk Turski, Grzegorz Muzioł, Marcin Siekacz, Pawel Wolny, Krzesimir Szkudlarek, Anna Feduniewicz-Żmuda, Krzysztof Dybko, Czeslaw Skierbiszewski

Journal of Crystal Growth Volume 482, 15 January 2018, Pages 56-60 https://doi.org/10.1016/j.jcrysgro.2017.11.001

Composition, Microstructure, and Electrical Performance of Sputtered SnO Thin Films for p-Type Oxide Semiconductor
Seung Jun Lee, Younjin Jang, Han Joon Kim, Eun Suk Hwang, Seok Min Jeon, Jun Shik Kim, Taehwan Moon, Kyung-Tae Jang, Young-Chang Joo, Deok-Yong Cho, and Cheol Seong Hwang

ACS Applied Materials & Interfaces 2018 10 (4), 3810-3821 ; DOI: 10.1021/acsami.7b17906

Phase and Microstructures in Sputter Deposited Nanocrystalline Fe-Cr Thin Films
Xuyang Zhou , Gregory B. Thompson

Materialia (2018), doi: https://doi.org/10.1016/j.mtla.2018.07.007

Crystallographically Aligned 1.508 eV Nitrogen Pairs in Ultra-Dilute GaAs:N
Brian Fluegel et al

2018 Jpn. J. Appl. Phys. 57 090302; https://doi.org/10.7567/JJAP.57.090302

Vapor-Defect-Solid Growth Mechanism for NanoNets Utilizing Natural Defect Networks in Polycrystals
Zumin Wang, Eric J.Mittemeijer

Materials & Design, Volume 150, 15 July 2018, Pages 206-214; https://doi.org/10.1016/j.matdes.2018.04.005

Luminescent N-polar (In, Ga) N/GaN Quantum Wells Achieved by Plasma-Assisted Molecular Beam Epitaxy at Temperatures Exceeding 700° C
C. Chèze, F. Feix, J. Lähnemann, T. Flissikowski, M. Kryśko, P. Wolny, H. Turski, C. Skierbiszewski, and O. Brandt

Appl. Phys. Lett. 112, 022102 (2018); https://doi.org/10.1063/1.5009184

Influence of Temperature and Al/N Ratio on Structural, Chemical & Electronic Properties of Epitaxial AlN Films Grown Via PAMBE
Shubhendra Kumar Jain, Monu Mishra, Neha Aggarwal, Shibin Krishna, Bhasker Gahtori, Akhilesh Pandey, Govind Gupta

Applied Surface Science, Volume 455, 15 October 2018, Pages 919-923; https://doi.org/10.1016/j.apsusc.2018.06.070

Self-Assembled Stoichiometric Barium Titanate Thin Films Grown by Molecular Beam Epitaxy
T. Al.Morgan, M.Zamani-Alavijeh, S.Erickson, G.Story, W.Schroeder, A.Kuchuk, M.Benamar, G.J.Salamo

Journal of Crystal Growth, Volume 493, 1 July 2018, Pages 15-19; https://doi.org/10.1016/j.jcrysgro.2018.04.023

High-Performance SWIR/MWIR and MWIR/MWIR Bispectral MCT Detectors by AIM
Heinrich Figgemeier, Christopher Ames, Johannes Beetz, Rainer Breiter, Detlef Eich, et al.

Conference Proceedings of SPIE Defense + Security, 2018, Orlando, Florida, United States

Electrical Properties of Midwave and Longwave InAs/GaSb Superlattices Grown on GaAs Substrates by Molecular Beam Epitaxy
Benyahia, Ł. Kubiszyn, K. Michalczewski, J. Boguski, A. Kębłowski, P. Martyniuk, J. Piotrowski and A. Rogalski

Nanoscale Research Letters (2018) 13:196

Self-Assembled Barium Titanate Nanoscale Films by Molecular Beam Epitaxy
Timothy Allen Morgan

University of Arkansas, Fayetteville, 2018

Interfacial Misfit Array Technique for GaSb Growth on GaAs
(001) Substrate by Molecular Beam Epitaxy
D. Benyahia, Ł. Kubiszyn, K. Michalczewski, A. Keblowski, 
P. Martyniuk, J. Piotrowski, and A. Rogalski

Journal of Electronic Materials, 07 September 2017

A Highly Responsive Self-Driven UV Photodetector Using GaN Nanoflowers
N. Aggarwal, S. Krishna, A. Sharma, L. Goswami, D. Kumar, S. Husale, G. Gupta

Adv. Electron. Mater. 2017, 3, 1700036; https://doi.org/10.1002/aelm.201700036

Tailoring the Optical Properties of InAs/GaAs Quantum Dots by Means of GaAsSb, InGaAs and InGaAsSb Strain Reducing Layers
A.Salhi, S.Alshaibani, B.Ilahi, M.Alhamdan, A.Alyamani, H.Albrithen, M.El-Desouki

Journal of Alloys and Compounds, Vol. 714, August 2017, Pages 331-337

Electron-Beam Deposition of Superconducting Molybdenum Thin Films for the Development of Mo/Au TES X-ray Microcalorimeter
Fred Michael Finkbeiner, Joseph S. Adams, Simon R. Bandler, Gabriele L. Betancourt-Martinez, Ari David Brown, Meng-Ping Chang, James A. Chervenak, Meng P. Chiao, Aaron M. Datesman et al.

IEEE Transactions on Applied Superconductivity, VOL. 27, NO. 4, JUNE 2017

Carrier Dynamics in GaAsBi Quantum Wells
S. Azaizia, A. Balocchi, D. Lagarde, A. Arnoult, X. Marie, C. Fontaine, H. Carrère

Nanotechnology Materials and Devices Conference, 2016 IEEE

ErAsSb Nanoparticle Growth on GaAs Surface by Molecular Beam Epitaxy
Yuanchang Zhang, Kurt G. Eyink, Joseph Peoples, Krishnamurthy Mahalingam, Madelyn Hill, Larry Grazulis

Journal of Crystal Growth, Vol 435, 2016, pp. 62-67

The MBE Growth and Optimization of High Performace Terahertz Frequency Quantum Cascade Lasers
L. H. Li, J. X. Zhu, L. Chen, A. G. Davies, and E. H. Linfield

Optics Express, Vol. 23, Issue 3, 2015; https://doi.org/10.1364/OE.23.002720

MCT by MBE on GaAs at AIM: State of the Art and Roadmap
H. Figgemeier, J. Wenisch, D. Eich, S. Hanna, W. Schirmacher, H. Lutz, T. Schallenberg, R. Breiter

Proc. SPIE 9451, Infrared Technology and Applications XLI, 945127 (June 4, 2015)

Growth and Characterization of Epitaxial Al Layers on GaAs and Si Substrates for Superconducting CPW Resonators in Scalable Quantum Computing Systems
Julie Tournet, University of Waterloo

University of Waterloo Theses & Dissertations, 2015

Evaluation of HgCdTe on GaAs Grown by Molecular Beam Epitaxy for High-Operating-Temperature Infrared Detector Applications
J. Wenisch, W. Schirmacher, R. Wollrab, D. Eich, S. Hanna, R. Breiter, H. Lutz, and H. Figgemeier

Journal of Electronic Materials September 2015, Volume 44, Issue 9, pp 3002-3006

Molecular beam epitaxial growth of Bi2Te3 and Sb2Te3 topological insulators on GaAs (111) substrates: a potential route to fabricate topological insulator p-n junction
Zhaoquan Zeng, Timothy A. Morgan, Dongsheng Fan, Chen Li, Yusuke Hirono, Xian Hu, Yanfei Zhao, Joon
Sue Lee, Jian Wang, Zhiming M. Wang, Shuiqing Yu, Michael E. Hawkridge, Mourad Benamara, and Gregory J. Salamo

AIP Advances 3, 072112 (2013); https://doi.org/10.1063/1.4815972

Reduction of Process Variation Through Automated Substrate Temperature Uniformity Mapping in Multi-Wafer MBE Systems
Thomas J. Rogers, Likang Li, Robert Yanka, Chris Santana, Jason R. Williams, Charles A. Taylor II, Darryl Barlett

The International Conference on Compound Semiconductor Manufacturing Technology 2008

Adsorption-Controlled Molecular-Beam Epitaxial Growth of BiFeO3
J.F. Ihlefeld, A. Kumar, V. Gopalan, D.G. Schlom, Y.B. Chen, X.Q. Pan, T. Heeg, J. Schubert, X. Ke, P. Schiffer, J. Orenstein, L.W. Martin, Y.H. Chu, and R. Rames

Applied Physics Letters 91, 2007, pp. 071922

Substrate Temperature Measurement Using a Commercial Band-Edge Detection System
I. Farrer, J.J. Harris, R. Thomson, D. Barlett, C.A. Taylor II, and D.A. Ritchie

2006 MBE Conference: Tokyo

Growth Related Interference Effects in Band Edge Thermometry of Semiconductors.
R. N. Sacks, D. Barlett, C. A. Taylor II, and J. Williams

J.V.S.T. B 23, 2005

In Situ Temperature Control of MBE Growth Using Band-Edge Thermometry.
Shane Johnson, Chau-Hong Kuo, Martin Boonzaayer, Wolfgang Braun, Ulrich Koelle, Yong-Hang Zhang, and John Roth

J.V.S.T. B 16, 1998, pp. 1502-1506

Precision of Noninvasive Temperature Measurement by Diffuse Reflectance Spectroscopy.
T.P. Pearsall, Stevan R. Saban, James Booth, Barrett T. Beard Jr., and S.R. Johnson

Rev. Sci. Instrum. 66, 1995, pp. 4977-4980

Diffuse optical reflectivity measurements on GaAs during MBE processing.
C. Lavoie, S.R. Johnson, J.A. Mackenzie, T. Tiedje, and T. van Buuren.

J.V.S.T. A 10, 1992, pp. 930-933

Transformation of the Elemental Composition on the GaN Surface During a 2D-3D Transition 
Y.E. Maidebura, V.G. Mansurov, T.V. Malin, K.S. Zhuravlev

Applied Suface Science, Volume 577, 1 March 2022, 151802; https://doi.org/10.1016/j.apsusc.2021.151802

Cation reordering instead of phase transitions: Origins and implications of contrasting lithiation mechanisms in 1D ζ- and 2D α-V2O5
Yuting Luo, Shahed Rezaei, David A. Santos, Yuwei Zhang, Joseph V. Handy, Luis Carrillo, Brian J. Schultz, Leonardo Gobbato, Max Pupucevski, Kamila Wiaderek, Harry Charalambous, Andrey Yakovenko, Matt Pharr, Bai-Xiang Xu, and Sarbajit Banerje

PNAS (Proceedings of the National Academy of Sciences of the United States of America) January 25, 2022 119 (4) e2115072119; https://doi.org/10.1073/pnas.2115072119

Evolution of the Atomic and Electronic Structures During Nitridation of the Si(111) Suface Under Ammonia Flux 
Vladimir Mansurov, Yury Galitsyn, Timur Malin, Sergey Teys, Denis Milakhin, Konstantin Zhuravlev 

Applied Suface Science Volume 571, 1 January 2022, 151276; https://doi.org/10.1016/j.apsusc.2021.151276

Engineering ordered arrangements of oxygen vacancies at the surface of superconducting La2CuO4 thin films 
Y. Eren Suyolcu, Georg Christiani, Patrick T. Gemperline, et al.

J. Vac. Sci. Technol. A 40, 013214 (2022); https://doi.org/10.1116/6.0001473

Nanoscale-Resistive Switching in Forming-Free Zinc Oxide Memristive Structures
Roman V. Tominov, Zakhar E. Vakulov, Nikita V. Polupanov, Aleksandr V. Saenko, Vadim I. Avilov, Oleg A. Ageev, and Vladimir A. Smirnov

Nanomaterials 2022, 12(3), 455; https://doi.org/10.3390/nano12030455

Substitution of Phosphorus at the InP(001) Surface Upon Annealing in an Arsenic Flux
Dmitriev, D.V., Kolosovsky, D.A., Fedosenko, A. I. Toropov & K. S. Zhuravlev

Semiconductors (2022); https://doi.org/10.1134/S1063782621100080

Modification of the Surface Energy and Morphology of GaN Monolayers on the AlN Surface in an Ammonia Flow
Maidebura, Y. E., T. V. Malin, and K. S. Zhuravlevx

Applied Physics Letters 120, no. 5 (2022): 053101; https://doi.org/10.1063/5.0077445

Heterostructure Development and Quantum Control for Semiconductor Qubits

Master's thesis, University of Waterloo, 2022

Integration of Epitaxial IV–VI Pb-Chalcogenide on Group IV Vicinal Ge Substrate to Form p–n Heterogeneous Structures
McDowell, Lance L., Jijun Qiu, Milad Rastkar Mirzaei, Binbin Weng, and Zhisheng Shi

Crystal Growth & Design (2021) 2022, 22, 1, 461–468; https://doi.org/10.1021/acs.cgd.1c01074

An Analysis of Kikuchi Lines Observed with a RHEED Apparatus for a TiO2-Terminated SrTiO3 (001) Crystalx 
J Pawlak, M Przybylski, Z Mitura

Materials 2021, 14(22), 7077; https://doi.org/10.3390/ma14227077

Distinguishing two-component anomalous Hall effect from topological Hall effect in magnetic topological insulator MnBi2Te4 
Lixuan Tai, Jie Li, Su Kong Chong, Huairuo Zhang, Peng Zhang, Peng Deng, Christopher Eckberg, Gang Qiu, Bingqian Dai, Haoran He, Di Wu, Shijie Xu, Albert V. Davydov, Ruqian Wu, and Kang L. Wang 

arXiv preprint arXiv:2103.09878 (2021)

Two-dimensional Ferromagnetism in Eu-intercalated Few-layer Graphene
Ivan S. Sokolov, Dmitry V. Averyanov, Oleg E. Parfenov, Alexander N. Taldenkov, Igor A. Karateev, Andrey M. Tokmachev, Vyacheslav G. Storchak

Journal of Alloys and Compouds, Volume 884, 5 December 2021, 161078; https://doi.org/10.1016/j.jallcom.2021.161078

Substantial P-Type Conductivity of AlN Achieved via Beryllium Doping
Habib Ahmad,Jeff Lindemuth,Zachary Engel,Christopher M. Matthews,Timothy M. McCrone,William Alan Doolittle

Advanced Materials, Volume 33, Issue 42, October 21, 2021, 2104497; https://doi.org/10.1002/adma.202104497

Strong Cube-textured Titanium Nitride Conductive Films Directly on Flexible Metal Substrate
Gao, Ying, Sicong Sun, Yongkuan Li, and Venkat Selvamanickam

Thin Solid Films, Volume 734, 30 September 2021, 138848; https://doi.org/10.1016/j.tsf.2021.138848

Nanoscale Synthesis of Ionic Analogues of Bilayer Silicene with High Carrier Mobility
Dmitry V. Averyanov, Peitao Liu, Ivan S. Sokolov, Oleg E. Parfenov, Igor A. Karateev, Domenico Di Sante, Cesare Franchini, Andrey M. Tokmachev, and Vyacheslav G. Storchak

Journal of Materials Chemistry C, 2021,9, 8545-8551; 21 July 2021; https://doi.org/10.1039/D1TC01951A

Carbonate Formation Lowers the Electrocatalytica Activity of Perovskite Oxides for Water Electrolysis
Christoph Baeumer, Allen Yu-Lun Liang, Urˇska Trstenjak, Qiyang Lu, Rainer Waser, J. Tyler Mefford, Felix Gunkel, Slavomir Nemsak, and William C. Chueh

Journal of Materials Chemistry A 30 June 2021; DOI: 10.1039/d1ta03205d

The Role of Buffer Layer on the Performance and Uniformity Improvement of Long-Length HTS YBa2Cu3O7−x Tapes Derived by MOD
Chen Liao, Chuanbing Cai, Feng Fan, Yangyang Chen, Zhiyong Liu, Chuanyi Bai, Yuming Lu, Yanqun Guo, Hongbin Jian, and Yongjun Zhang

Journal of Superconductivity and Novel Magnetism (2021); 18 June 2021; https://doi.org/10.1007/s10948-021-05934-7

Emerging 2D Magnetic States in Graphene-based Monolayer of EuC6
Ivan S. Sokolov, Dmitry V. Averyanov, Fabrice Wilhelm, Andrei Rogalev, Oleg E. Parfenov, Alexander N. Taldenkov, Igor A. Karateev, Andrey M. Tokmachev, and Vyacheslav G. Storchak

Nano Research (2021), 04 June 2021; https://doi.org/10.1007/s12274-021-3494-9

Inhomogeneity Mediated Systematic Reduction of Schottky Barrier in Au/’GaN-nanorods-film’ Interface
Rohit Kumar Pant, Basanta Roul, Deependra Kumar Singh, Arun Malla Chowdhury, Karuna K. Nanda, and S B Krupanidhi

2021 Semicond. Sci. Technol. 36 015017; https://doi.org/10.1088/1361-6641/abc51a

Thickness-driven Quantum Anomalous Hall Phase Transition in Magnetic Topological Insulator Thin Films
Yuchen Ji, Zheng Liu, Peng Zhang, Lun Li, Shifei Qi, Peng Chen, Yong Zhang, Qi Yao, Zhongkai Liu, Kang L. Wang, Zhenhua Qiao, and Xufeng Kou

arXiv:2105.10684 [cond-mat.mes-hall], 21 May 2021

Making BaZrS3 Chalcogenide Perovskite Thin Films by Molecular Beam Epitaxy
Ida Sadeghi, Kevin Ye, Michael Xu, James M. LeBeau, R. Jaramillo

arXiv:2105.10258 [cond-mat.mtrl-sci], 21 May 2021

Turning Electrochemically Driven Surface Transformation in Atomically Flat LaNiO3 Thin Films for Enhanced Water Electrolysis
Christoph Baeumer, Jiang Li, Qiyang Lu, Allen Yu-Lun Liang, Lei Jin, Henrique Perin Martins, Tomáš Duchoň, Maria Glöß Sabrina M. Gericke, Marcus A. Wohlgemuth, Margret Giesen, Emily E. Penn, Regina Dittmann, Felix Gunkel, Rainer Waser, Michal Bajdich, Slavomír Nemšák, J. Tyler Mefford and William C. Chueh

Nature Materials (2021); May 2021; https://doi.org/10.1038/s41563-020-00877-1

High Carrier Mobility in a Layered Antiferromagnet Integrated with Silicon
Oleg E. Parfenov, Dmitry V. Averyanov, Ivan S. Sokolov, Alexander N. Taldenkov, Igor A. Karateev, Andrey M. Tokmachev, and Vyacheslav G. Storchak

ACS Applied Materials & Interfaces 2021, 13, 35, 41926-41932; https://doi.org/10.1021/acsami.1c13623

Universal Interface Between Functional Oxides and Silicon
Dmitry V. Averyanov,Ivan S. Sokolov,Igor A. Karateev,Alexander N. Taldenkov,Oleg E. Parfenov,Andrey M. Tokmachev,Vyacheslav G. Storchak

Advanced Function Materials, Volume 31, Issue 18, May 3, 2021, 2010269; https://doi.org/10.1002/adfm.202010269

Two-Dimensional Magnets Beyond the Monolayer Limit
Andrey M. Tokmachev, Dmitry V. Averyanov, Alexander N. Taldenkov, Ivan S. Sokolov, Igor A. Karateev, Oleg E. Parfenov, and Vyacheslav G. Storchak

ACS Nano 2021, 15, 7, 12034-12041; https://doi.org/10.1021/acsnano.1c03312

a-axis YBa2Cu3O7−x/PrBa2Cu3O7−x/YBa2Cu3O7−x Trilayers with Subnanometer RMS Roughness
Y. Eren Suyolcu, Jiaxin Sun, Berit H. Goodge, Jisung Park, Jürgen Schubert, Lena F. Kourkoutis, and Darrell G. Schlom

APL Mater. 9, 021117 (2021); https://doi.org/10.1063/5.0034648

Growth Parameter Based Control of Cation Disorder in MgSnN2 Thin Films
Krystal R. York, Robert A. Makin, Nancy Senabulya, James P. Mathis, Roy Clarke, Roger J. Reeves, and Steven M. Durbin

Journal of Electronic Materials (2021); https://doi.org/10.1007/s11664-020-08708-4

Mg3N2 Nanocrystallites Formation During the GaN:Mg Layers Growth by the NH3-MBE Technique
T.V. Malin, V.G. Mansurov, Yu.G. Galitsyn, D.S. Milakhin, D.Yu. Protasov, B.Ya. Ber, D. Yu. Kazantsev, V.V. Ratnikov, M.P. Shcheglov, A.N. Smirnov, V.Yu. Davydov, K. S. Zhuravlev

Journal of Crystal Growth 554 (2021) 125963; https://doi.org/10.1016/j.jcrysgro.2020.125963

Formation of Quasi-Free-Standing Graphene on SiC(0001) Through Intercalation of Erbium
P. D. Bentley, T. W. Bird, A. P. J. Graham, O. Fossberg, S. P. Tear, and A. Pratt

AIP Advances 11, 025314 (2021); https://doi.org/10.1063/9.0000154

Electo-optic Response in Epitaxially Stabilized Orthorhombic mm2 BaTiO3
Marc Reynaud, Pei-Yu Chen, Wente Li, Therese Paoletta, Sunah Kwon, Dae Hun Lee, Ilya Beskin, Agham B. Posadas, Moon J. Kim, Chad M. Landis, Keji Lai, John G. Ekerdt, and Alexander A. Demkov

Phys. Rev. Materials 5, 035201; https://doi.org/10.1103/PhysRevMaterials.5.035201

Polarity-tunable Anomalous Hall Effect in Magnetic Topological Insulator MnBi2Te4
Lixuan Tai, Su Kong Chong, Huairuo Zhang, Peng Zhang, Peng Deng, Christopher Eckberg, Gang Qiu, Bingqian Dai, Haoran He, Di Wu, Shijie Xu, Albert V. Davydov, and Kang L. Wang

arXiv:2103.09878 [cond-mat.mtrl-sci] 17 Mar 2021

Influence of Composition and Morphology on the Electronic Properties of Semiconductor Nanostructures and Alloys
Christian M. Greenhill

University of Michigan (2021), Thesis

Analysis of the AlN Phase Transition on a Sapphire Surface Within a Universal 2D Lattice Gas Model in MBE
D S Milakhin, T V Malin, V G Mansurov, Yu G Galitsyn and K S Zhuravlev

Journal of Physics: Conference Series 1851(2021)012005; doi:10.1088/1742-6596/1851/1/012005

Classification of In Situ Reflection High Energy Electron Diffraction Images by Principal Component Analysis
Jinkwan Kwoen and Yasuhiko Arakawa

Japanese Journal of Applied Physics 60 SBBK03

High‑sensitivity of initial SrO growth on the residual resistivity in epitaxial thin flms of SrRuO3 on SrTiO3 (001)
Kar, Uddipta, Akhilesh Kr Singh, Song Yang, Chun-Yen Lin, Bipul Das, Chia-Hung Hsu, and Wei-Li Lee

Scientific Reports, 11, Article number: 16070 (2021); https://doi.org/10.1038/s41598-021-95554-x

Mechanisms of the Oxides Removal from the InP Surface under Annealing in an Arsenic Flux 
Dmitriev DV, Kolosovsky DA, Toporov AI, Zhuravlev KS

Optoelectronics, Instrumentation and Data Processing, 57, 451-457 (2021); https://doi.org/10.3103/S8756699021050046

Substrate Modification during Chemical Vapor Deposition of hBN on Sapphire 
Anushka Bansal, Maria Hilse, Benjamin Huet, Ke Wang, Azimkhan Kozhakhmetov, Ji Hyun Kim, Saiphaneendra Bachu, Nasim Alem, Ramon Collazo, Joshua A. Robinson, Roman Engel-Herbert, and Joan M. Redwing

ACS Applied Materials Interfaces 2021, 13, 45, 54516-54526; https://doi.org/10.1021/acsami.1c14591

Distinct Thin Film Growth Characteristics Determined Through Comparative Dimension Reduction Techniques
Kimberly Gliebe and Alp Sehirlioglu 

Journal of Applied Physics 130, 125301 (2021); https://doi.org/10.1063/5.0059655

Growth Mode and Strain Effect on Relaxor Ferroelectric Domains in Epitaxial 0.67Pb(Mg1/3NB2/3)O3-0.33PbTiO3/SrRuO3 Heterosctructures
Jamal Belhadi, Urska Gabo, Hana Ursic, Nina Daneu, Jieun Kim, Zishen Tian, Gertjan Koster, Lane W. Martin, and Matjaz Spreitzer

RSC Advances, 2021, 11, 1222; DOI: 10.1039/d0ra10107a

Dimensional Stacking for Machine Learning in ToF‐SIMS Analysis of Heterostructures
Kevin Abbasi Hugh Smith Matthew Hoffman Elahe Farghadany Laura S. Bruckman Alp Sehirlioglu

Advanced Materials Interfaces, 10 December 2020 https://doi.org/10.1002/admi.202001648

Polarization Dependent Photoluminescence and Optical Anisotropy in CuPtB-Ordered Dilute GaAs1-XBix Alloys
Tadas Paulauskas, Bronislovas Čechavičius, Vytautas Karpus, Lukas Jočionis, Saulius Tumėnas, Jan Devenson, Vaidas Pačebutas, Sandra Stanionytė, Viktorija Strazdienė, Andrejus Geižutis, Mária Čaplovičová, Viliam Vretenár, Michael Walls, and Arūnas Krotkus

Journal of Applied Physics 128, 195106 (2020); https://doi.org/10.1063/5.0030091

Comprehensive Analysis of Metal Modulated Epitaxial GaN
Habib Ahmad, Keisuke Motoki, Evan A. Clinton, Christopher M. Matthews, Zachary Engel, and W. Alan Doolittle

ACS Appl. Mater. Interfaces 2020, 12, 33, 37693–37712; https://doi.org/10.1021/acsami.0c09114

Dimensionality Concept in Solid-State Reactions: A Way to Control Synthesis of Functional Materials at the Nanoscale
Andrey M. Tokmachev, Dmitry V. Averyanov, Igor A. Karateev, Ivan S. Sokolov, Oleg E. Parfenov, Vyacheslav G. Storchak

Advanced Functional Materials August 2020; https://doi.org/10.1002/adfm.202002691

Band Gap Engineering Studies of PbTe, StTe, and CdSeTe for CDTE Solar Cell Applications
Elizabeth G. LeBlanc

Thesis, TX State University, August 2020

Combined In Situ XRD and Ex Situ TEM Studies of Thin Ba0.5Sr0.5TiO3 Films Grown by PLD on MgO
Sondes Bauer,* Adriana Rodrigues, Xiaowei Jin, Reinhard Schneider, Erich Müller, Dagmar Gerthsen, and Tilo Baumbach

Crystal Research and Technology, 2020, 1900235; DOI: 10.1002/crat.201900235

Classification of Reflection High-Energy Electron Diffraction Pattern Using Machine Learning
Jinkwan Kwoen and Yasuhiko Arakawa

Crystal Growth & Design Article May 13, 2020; https://doi.org/10.1021/acs.cgd.0c00506

Spontaneous Positive Exchange Bias Effect in SrFeO3-x/SrCoO3-x Epitaxial Bilayer
Tian-Cong Su, Jun Zhang, Wei Zhang, Ying-Ying Wang, Hui-Hui Ji, Xiao-Jiao Wang, Guo-Wei Zhou, Zhi-Yong Quan & Xiao-Hong Xu

Rare Metals (2020); https://doi.org/10.1007/s12598-020-01593-0

Large Exchange Splitting in Monolayer Graphene Magnetized by an Antiferromagnet
Yingying Wu, Gen Yin, Lei Pan, Alexander J. Grutter, Quanjun Pan, Albert Lee, Dustin A. Gilbert, Julie A. Borchers, William Ratcliff II, Ang Li, Xiao-dong Han & Kang L. Wang

Natural Electronics (2020) 3, pages 604–611 (2020); https://doi.org/10.1038/s41928-020-0458-0

Giant Quadratic Magneto-Optical Kerr Effect in (Eu,Gd)O Films for Magnetic Field Sensing
Vladimir N. Kats, Sergey G. Nefedov, Leonid A. Shelukhin, Pavel A. Usachev, Dmitry V. Averyanov, Igor A. Karateev, Oleg E. Parfenov, Alexander N. Taldenkov, Andrey M. Tokmachev, Vyacheslav G. Storchak, Victor V. Pavlova

Applied Materials Today, Volume 19, June 2020, 100640; https://doi.org/10.1016/j.apmt.2020.100640

Beam Rocking Auger Electron Spectroscopy of a Si(111)√3×√3-Ag Surface
Yoshimi Horio, Hitoshi Nakahara, Junji Yuhara, Yuji Takakuwa

e-Journal of Surface Science and Nanotechnology, 2020, Volume 18, Pages 139-145, Released April 09, 2020, Online ISSN 1348-0391 https://doi.org/10.1380/ejssnt.2020.139

Roles of Strain and Carrier in Silicon Oxidation
Shuichi Ogawa, Akitaka Yoshigoe, Jiayi Tang, Yuki Sekihata, and Yuji Takakuwa

2020 Jpn. J. Appl. Phys. 59 SM0801 https://iopscience.iop.org/article/10.35848/1347-4065/ab82a9/meta

Machine Learning Analysis of Perovskite Oxides Grown by Molecular Beam Epitaxy
Sydney R. Provence, Suresh Thapa, Rajendra Paudel, Tristan Truttmann, Abhinav Prakash, Bharat Jalan, Ryan B. Comes

arXiv:2004.00080 [cond-mat.mtrl-sci]

Highly Responsive, Self-Powered a-GaN Based UV-A Photodetectors Driven by Unintentional Asymmetrical Electrodes
Rohit Pant, Deependra Kumar Singh, Arun Mall Chowdhury, Basanta Roul, Karuna Kar Nanda, and Saluru Baba Krupanidhi

ACS Applied Electronic Materials, Feb. 21, 2020 https://doi.org/10.1021/acsaelm.9b00834

Stabilization of the Perovskite Phase in PMN-PT Epitaxial Thinfilms via Increased Interface Roughness
Urška Gabor, Damjan Vengust, Zoran Samardžija, Aleksander Matavž, Vid Bobnar, Danilo Suvorov, MatjažSpreitzer

Applied Surface Science, 513 (2020) https://doi.org/10.1016/j.apsusc.2020.145787

Physicochemical Aspects of the Formation of AlN Crystal Film on the (0001)Al2O3 Surface
V.G. Mansurov, Yu. G. Galitsyn, Yu. I. Mikhailov, T.V. Malin, D.S. Milakhin, K.S. Zhuravlev

Chemistry for Sustainable Development 27 (2019) 283-288; DOI: 10.15372/CSD2019140

Layer-Controlled Laws of Electron Transport in Two-Dimensional Ferromagnets
Oleg E. Parfenov, Andrey M. Tokmachev, Dmitry V. Averyanov, Igor A. Karateev, Ivan S.Sokolov, Alexander N. Taldenkov, Vyacheslav G. Storchak

Materials Today, Volume 29, October 2019, Pages 20-25; https://doi.org/10.1016/j.mattod.2019.03.017

Epitaxial n++-InGaAs Ultra-Shallow Junctions for Highly Scaled n-MOS Devices
P. Tejedor, M. Drescher, L. Vázqueza, L. Wildeb

Applied Surface Science, Volume 496, 1 December 2019, 147321; https://doi.org/10.1016/j.apsusc.2019.143721

Probing Proximity Effects in the Ferromagnetic Semiconductor EuO
Dmitry V. Averyanov, Andrey M.Tokmachev, Oleg E.Parfenov, Igor A.Karateev, Ivan S.Sokolov, Alexander N.Taldenkov, Mikhail S.Platunov, Fabrice Wilhelm, AndreiRogalev, Vyacheslav G.Storchak

Applied Surface Science, Volume 488, 15 September 2019, Pages 107-114; https://doi.org/10.1016/j.apsusc.2019.05.191

Investigation into the Memristor Effect in Nanocrystalline ZnO Films
Smirnov, V.A., Tominov, R.V., Avilov, V.I. et al.

Semiconductors (2019) 53: 72; https://doi.org/10.1134/S1063782619010202

Photodetection Properties of Nonpolar a‐Plane GaN Grown by Three Approaches Using Plasma‐Assisted Molecular Beam Epitaxy
Rohit Kumar Pant Deependra Kumar Singh Basanta Roul Arun Malla Chowdhury Greeshma Chandan Karuna K. Nanda Saluru B. Krupanidhi

PSSA Applications and Materials Science, Volume 216, Issue 18, September 2019, 1900171; https://doi.org/10.1002/pssa.201900171

Electron-Stimulated Aluminum Nitride Crystalline Phase Formation on the Sapphire Surface
Denis Milakhin, Timur Malin, Vladimir Mansurov, Yury Galitsyn, Konstantin Zhuravlev

Phys. Status Solidi B, Volume 256, Issue 6; https://doi.org/10.1002/pssb.201800516

Real-time monitoring and control of nitride growth rates by Metal Modulated Epitaxy
Kent L. Averett, John B. Hatch, Kurt G. Eyink, Cynthia T. Bowers, Krishnamurthy Mahalingam

Journal of Crystal Growth, Volume 517, 1 July 2019, Pages 12-16 https://doi.org/10.1016/j.jcrysgro.2019.04.008

Interface-Induced Anomalous Hall Conductivity in a Confined Metal
Oleg E. Parfenov, Dmitry V. Averyanov, Andrey M. Tokmachev, Igor A. Karateev, Alexander N. Taldenkov, Oleg A. Kondratev, and Vyacheslav G. Storchak

ACS Appl. Mater. Interfaces, 2018, 10 (41), pp 35589–35598

High Mobility Single-Crystalline-Like Silicon Thin Films on Inexpensive Flexible Metal Foils by Plasma Enhanced Chemical Vapor Deposition
P.Dutta, Y.Gao, M. Rathi, Y. Yao, Y.Li, M. Iliev, J. Martinez, V. Selvamanickam

Acta Materialia, Volume 147, 1 April 2018, Pages 51-58

Order Parameter and Band Gap of ZnSnN2
R. A. Makin et al.

2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC), Waikoloa Village, HI, USA, 2018, pp. 3865-3868. doi: 10.1109/PVSC.2018.8548103

Atomic Structure of Sr/Si(001)(1×2) Surfaces Prepared by Pulsed Laser Deposition
Tjaša Parkelj Potočnik, Erik Zupanič, Wen-Yi Tong, Eric Bousquet, Daniel Diaz Fernandez, Gertjan Koster, Philippe Ghosez, Matjaž Spreitzer

Applied Surface Science https://doi.org/10.1016/j.apsusc.2018.12.027

Stress Generation and Evolution in Oxide Heteroepitaxy
Aline Fluri, Daniele Pergolesi, Alexander Wokaun, and Thomas Lippert

Phys. Rev. B 97, Iss. 12 — 15 March 2018; https://doi.org/10.1103/PhysRevB.97.125412

An Experimental Study of Residual Stress Induced Modulation of Vibration Characteristics in 1-D MEMS Resonators
Behera, A., Dangi, A., and Pratap, R.

Materials Performance and Characterization, https://doi.org/10.1520/MPC20170156. ISSN 2379-1365.

Emerging Two-Dimensional Ferromagnetism in Silicene Materials
Andrey M. Tokmachev, Dmitry V. Averyanov, Oleg E. Parfenov, Alexander N. Taldenkov, Igor A. Karateev, Ivan S. Sokolov, Oleg A. Kondratev & Vyacheslav G. Storchak

Nature Communications, (2018) 9:1672, doi: 10.1038/s41467-018-04012-2

Role of the Phase Transition at GaN QDs Formation on (0001)AlN Surface by Ammonia Molecular Beam Epitaxy
Konfederatova, K.A., Mansurov, V.G., Malin, T.V. et al.

J Therm Anal Calorim (2018) 133: 1181; https://doi.org/10.1007/s10973-018-7280-1

Room-Temperature Growth of Thin Films of Niobium on Strontium Titanate (0 0 1) Single-Crystal Substrates for Superconducting Joints
Yuhei Shimizu, Kazuhiko Tonooka, Yoshiyuki Yoshida, Mitsuho Furuse, Hiroshi Takashima

Applied Surface Science 444 (2018) 71–74

Direct epitaxial integration of the ferromagnetic semiconductor EuO with Si(1 1 1)
Dmitry V. Averyanov, Peter E. Terin, Yuri G. Sadofyev, Andrey M. Tokmachev, Alexey E. Primenko, Igor A. Likhachev & Vyacheslav G. Storchak

Journal of Magnetism and Magnetic Materials, Volume 459, 1 August 2018, Pages 136-140; https://doi.org/10.1016/j.jmmm.2017.11.062

Preparation of YBa2Cu3O7−δ and La1.85Sr0.15CuO4 Bilayer Structure for Superconducting Connection
Yuhei Shimizu , Hiroshi Takashima, Yoshiyuki Yoshida, and Mitsuho Furuse

IEEE Transactions on Applied Superconductivity, Vol. 28, No. 4, June 2018

Emerging Two-Dimensional Ferromagnetism in Silicene Materials
Andrey M. Tokmachev1, Dmitry V. Averyanov1, Oleg E. Parfenov1, Alexander N. Taldenkov1, Igor A. Karateev1, Ivan S. Sokolov1, Oleg A. Kondratev1 & Vyacheslav G. Storchak

NATURE COMMUNICATIONS, (2018) 9:1672, DOI: 10.1038/s41467-018-04012-2

Influence of Surface Structures on Quality of CdTe (100) Thin Films Grown on GaAs (100) Substrates
Yi Gu, Hui-Jun Zheng, Xi-Ren Chen, Jia-Ming Li, Tian-Xiao Nie, Xu-Feng Kou

CHIN. PHYS. LETT. Vol. 35, No. 8 (2018) 086801

Control of Spin-Wave Damping in Radio Frequency Components Using Spin Currents from Topological Insulators
A Navabi-Shirazi

Thesis - UCLA, 2018

High-Temperature Magnetism in Graphene Induced by Proximity to EuO
Dmitry V. Averyanov, Ivan S. Sokolov, Andrey M. Tokmachev, Oleg E. Parfenov, Igor A. Karateev, Alexander N. Taldenkov, and Vyacheslav G. Storchak

ACS Appl. Mater. Interfaces 10, 24, 20767-20774; DOI: 10.1021/acsami.8b04289

Role of the Phase Transition at GaN QDs Formation on (0001) AlN Surface by Ammonia Molecular Beam Epitaxy
Kseniya A. Konfederatova, Vladimir G. Mansurov, Timur V. Malin, Yurij G. Galitsyn, Ivan A. Aleksandrov, Vladimir I. Vdovin, Konstantin S. Zhuravlev

J Therm Anal Calorim (2018) 133: 1181; https://doi.org/10.1007/s10973-018-7280-1

Indium Thin Films in Multilayer Superconducting Quantum Circuits
McRae, Corey Rae

Thesis - 2018, University of Waterloo

Coupling of Magnetic Orders in a 4f Metal/Oxide System
Dmitry V. Averyanov, Andrey M. Tokmachev, Oleg E. Parfenov, Igor A. Karateev, Alexander N. Taldenkov and Vyacheslav G. Storchak

J. Mater. Chem. C, 2018, Advance Article first published on 29 Aug 2018; https://dx.doi.org/10.1039/C8TC02661K

Growth of Ordered and Disordered ZnSnN2
Robert Allen Makin, Nancy Senabulya, James Mathis, N. Feldberg, P. Miska, Roy Clarke, and Steven M. Durbin

Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 35, 02B116 (2017); https://doi.org/10.1116/1.4978021

High Mobility Single-Crystalline-Like Silicon Thin Films on Inexpensive Flexible Metal Foils by Plasma Enhanced Chemical Vapor Deposition
P.Dutta, Y.Gao, M.Rathi, Y.Yao, Y.Li, M.Iliev, J.Martinez, V.Selvamanickama

Acta Materialia Volume 147, 1 April 2018, Pages 51-58

Thin Film Metrology and Microwave Loss Characterization of Indium and Aluminum/Indium Superconducting Planar Resonators
C.R.H. McRae, J.H. Béjanin, C.T. Earnest, T.G. McConkey, J.R. Rinehart, C. Deimert, J.P. Thomas, Z.R. Wasilewski, and M. Mariantoni

Journal of Applied Physics 123, 205304 (2018); doi/10.1063/1.5020514

Anisotropic Magnetic Damping Studies in β-Ta/2D-Epitaxial-Py Bilayers
Nilamani Behera, Ankit Kumara, Dinesh K.Pandya, SujeetChaudhary

Journal of Magnetism and Magnetic Materials, Volume 444, 15 December 2017, Pages 256-262; https://doi.org/10.1016/j.jmmm.2017.08.031

Photo- and Cathodoluminescence of Eu3+ or Tb3+ Doped CaZrO3 Films Prepared by Pulsed Laser Deposition

Kazushige Ueda, Yuhei Shimizu, Hiroshi Takashima, Florian Massuyeau, Stéphane Jobic

Optical Materials, Vol. 73, November 2017, Pages 504-508

Interfacial Misfit Array Technique for GaSb Growth on GaAs(001) Substrate by Molecular Beam Epitaxy
D. Benyahia, Ł. Kubiszyn, K. Michalczewski, A. Keblowski, P. Martyniuk, J. Piotrowski, and A. Rogalski

Journal of Electronic Materials, 07 September 2017

Engineering of Magnetically Intercalated Silicene Compound: An Overlooked Polymorph of EuSi2
Andrey M. Tokmachev, Dmitry V. Averyanov, Igor A. Karateev, Oleg E. Parfenov, Oleg A. Kondratev, Alexander N. Taldenkov, Vyacheslav G. Storchak

Advanced Functional Materials, Vol. 27, Issue 18, May 11, 2017 1606603; https://doi.org/10.1002/adfm.201606603

Epitaxial stabilization of ordered Pd–Fe structures on perovskite substrates
Renee M. Harton, Vladimir A.Stoica, RoyClarke

Journal of Magnetism and Magnetic Materials, Volume 429, 1 May 2017, Pages 29-33; https://doi.org/10.1016/j.jmmm.2016.12.112

Tin Oxide Films Grown by Molecular Beam Epitaxy
Gazoni, Martinez

Thesis - 2017, University of Canterbury

The Interplay of Surface Adsorbates and Cationic Intermixing in the 2D Electron Gas Properties of LAO-STO Heterointerfaces
Akrobetu, Richard K

Thesis - 2017, Master of Sciences (Engineering), Case Western Reserve University, Materials Science and Engineering.

Structural Characterization Studies on Semiconducting ZnSnN2 Films using Synchrotron X-ray Diffraction
Senabulya, Nancy

Thesis - University of Michigan, 2017

Chapter Nine – Dynamic Atomic Layer Epitaxy of InN on/in GaN and Its Application for Fabricating Ordered Alloys in Whole III-N System
K. Kusakabe, A. Yoshikawa

https://doi.org/10.1016/bs.semsem.2016.10.001 Semiconductors and Semimetals, III-Nitride Semiconductor Optoelectronics, Volume 96, 2017, Pages 305-340

Two Magnon Scattering and Anti-Damping Behavior in a Two-Dimensional Epitaxial TiN/Py(tPy)/b-Ta(tTa) System
Nilamani Behera, Ankit Kumar, Sujeet Chaudhary and Dinesh K. Pandya

RSC Adv., 2017, 7, 8106

A Prospective Submonolayer Template Structure for Integration of Functional Oxides with Silicon
Dmitry V. Averyanov, Christina G. Karateeva, Igor A. Karateev, Andrey M. Tokmachev, Mikhail V. Kuzmin, Pekka Laukkanen , Alexander L. Vasiliev, Vyacheslav G. Storchak

Materials and Design 116 (2017) 616–621

In Situ Stress Observation in Oxide Films and How Tensile Stress Influences Oxygen Ion Conduction
Aline Fluri, Daniele Pergolesi, Vladimir Roddatis, Alexander Wokaun and Thomas Lippert

Nature Communications 10.1038/ncomms10692 (2016)

Topotactic Synthesis of the Overlooked Multilayer Silicene Intercalation Compound SrSi 2
Andrey Tokmachev, Dmitry Averyanov, Igor Karateev, Oleg Parfenov, Alexander L. Vasiliev, Sergey Yakunin and Vyacheslav Storchak

Nanoscale, 20 Jul 2016

Atomic-Scale Engineering of Abrupt Interface for Direct Spin Contact of Ferromagnetic Semiconductor with Silicon
Dmitry V. Averyanov, Christina G. Karateeva, Igor A. Karateev, Andrey M. Tokmachev, Alexander L. Vasiliev, Sergey I. Zolotarev, Igor A. Likhachev & Vyacheslav G. Storchak

Scientific Reports | 6:22841 | DOI: 10.1038/srep22841

Disentanglement of Growth Dynamic and Thermodynamic Effects in LaAlO3/SrTiO3 Heterostructures
Chencheng Xu, Christoph Bäumer, Ronja Anika Heinen, Susanne Hoffmann-Eifert, Felix Gunkel & Regina Dittmann

Nature, Scientific Reports 6, Article Number:22410 (2016)

Nanocrystalline Ferroelectric BiFeO3 Thin Films by Low Temperature Atomic Layer Deposition
Mariona Coll, Jaume Gazquez, Ignasi Fina, Zakariaya Khayat, Andy Quindeau, Marin Alexe, Maria Varela, Susan Trolier-McKinstry , Xavier Obradors, and Teresa Puig

Chem. Mater. To be published 20 Aug 2015

Observation of Inverse Spin Hall Effect in Bismuth Selenide
Praveen Deorani, Jaesung Son, Karan Banerjee, Nikesh Koirala, Matthew Brahlek, Seongshik Oh, and Hyunsoo Yang

Phys. Rev. B 90, 094403 – Published 3 September 2014

Review on RHEED – Reflective High Energy Electron Diffraction (RHEED)- A Unique Tool For In-Situ Growth Monitoring
Oleg Maksimov, Material Research Institute, Pennsylvania State University

Vacuum Technology and Coating, August 2008

In Situ Composition Monitoring Using RHEED for SrTiO3 Thin Films Grown by Reactive Coevaporation
Luke S.-J Peng and Brian H. Moeckly

J.V.S.T. A 22, 2004, pp. 2437-2439

Smoothening of Cu Films Grown on Si(001)
R. A. Lukaszew, Y. Sheng, C. Uher, and R. Clarke

Appl. Phys. Lett., Vol. 76, no.6, 2000

RHEED Monitoring of Rotating Samples During Large-Area Homogeneous Deposition of Oxides
V. C. Matijasevic, Z. Lu, K. Von Dessonneck, C. Taylor, D. Barlett

MRS Fall Meeting, 1997

Growth and Magnetic Properties of Co x Ni 1-x Ultrathin Films on Cu(100)
F. O. Schumann, S. Z. Wu, G. J. Mankey, and R. F. Willis

Physical Review B, Vol. 56, no.5, 1997

Temperature-Dependent Strain Relaxation and Islanding of Ge/Si(111)
P. W. Deelman, L. J. Schowalter, and T. Thundat

Proc. Materials Research Society Vol. 399 (1996)

Resonant RHEED Study of Cu 3Au(111) Surface Order
S. W. Bonham and C. P. Flynn

University of Illinois at Urbana-Champaign

Molecular Beam Epitaxial Growth of InAs/AlGaAsSb Deep Quantum Wells on GaAs Substrates
N. Kuze, H. Goto, S. Miya, S. Muramatsu, M. Matsui, I. Shibasaki

Proc. Materials Reearch Society Vol. 3999 (1996)

Studies of Exchange Coupling in Fe(001) Whisker/Cr/Fe Structures Using BLS and RHEED Techniques
B. Heinrich, M. From, J. F. Cochran, L. X. Liao, Z. Celinski, C. M. Schneider and K. Myrtle

Mat. Res. Soc. Symp. Proc. Vol. 313

The Use of RHEED Intensities for the Quantitative Characterization of Surfaces
Y. Ma, S. Lordi and J. A. Eades

Proc. Materials Research Society Vol. 399 (1996)

Morphology Transition and Layer-by-Layer Growth of Rh(111)
F. Tsui, J. Wellman, C. Uher, and Roy Clarke

Physical Review Letters, Vol. 76, no. 17, 1996

Review on RHEED – Introduction to RHEED
A.S. Arrot

Ultrathin Magnetic Structures I, Springer-Verlag, 1994, pp. 177-220

Structural transition in epitaxial Co-Cr superlattices
W. Vavra, D. Barlett, S. Elagoz, C. Uher, and R. Clarke

Physical Review B Vol. 47, no.9, 1993

camera-Based RHEED Detection and Analysis System
D. Barlett, C.W. Snyder, B.G. Orr, and Roy Clarke

Rev. Sci. Instrum. 62, 1991, pp. 1263-1269

The Molecular Beam Epitaxy Growth of InGaAs on GaAs(100) Studied by In Situ Scanning Tunneling Microscopy and Reflection High-Energy Electron Diffraction
C. W. Snyder, D. Barlett, B. G. Orr, P. K. Bhattacharya and J. Singh

J. Vac. Sci. Technol. B 9 (4), Jul/Aug 1991

Review on RHEED – A Review of the Geometrical Fundamentals of RHEED with Application to Silicon Surfaces
John E. Mahan, Kent M. Geib, G.Y. Robinson, and Robert G. Long

J.V.S.T. A 8, 1990, pp. 3692-3700
Thin Film and Industrial Metrology Systems

Have a measurement challenge in mind?

One of the pillars of our success is standing by as consultants. We’re always here to talk about your project needs.

Contact Us