The kSA MOS UltraScan and kSA MOS ThermalScan systems are ex situ, flexible, high-resolution scanning curvature, bow, and tilt-measurement systems.

animated-MOS-Ultra-Scan

The kSA MOS UltraScan and kSA MOS ThermalScan systems are flexible, high-resolution scanning curvature, bow, and tilt-measurement systems. Based on proven and patented kSA MOS technology, the kSA MOS UltraScan uses a laser array to map the two-dimensional curvature, wafer bow, and stress of semiconductor wafers, optical mirrors, glass, lenses – practically any polished surface. For room temperature measurements, explore the kSA MOS UltraScan. If you want to know how your wafer changes with temperature, explore the kSA MOS ThermalScan.

For more information see the kSA MOS UltraScan Product Specification Sheet →
For more information see the kSA MOS ThermalScan Product Specification Sheet →

The standard kSA MOS UltraScan system provides a 300 mm x,y scanning range with better than 1 um scanning resolution. Optionally, larger scanning stages (larger glass panel mapping platforms) are available. Scans are fully programmable and extremely repeatable for selected area, line scan, or full area map. The system also provides quantitative film stress analysis with full area spatial map by first scanning the bare substrate and then re-scanning the sample post-process. Unmatched curvature, stress, and bow analysis capabilities are at your fingertips for obtaining large sample uniformity profiles and/or localized isolation of sub-millimeter areas of interest with very high spatial resolution

XY Scanning

kSA MOS UltraScan is equipped with XY scanning over a 300mm x 300mm area. This provides the advantage of uniform spatial data resolution over the entire sample. At large diameters spatial resolution will
not be lost, which is typically a problem in linear scanning systems with rotation stages. It also provides easy measurement set up for rectangular samples or for mapping limited areas of a sample.

Bow Height

When a laser is reflected off a bowed sample, the reflected angle will differ at different points on the sample. The automated laser tracking in the kSA MOS UltraScan optics not only keeps the laser array centered on the detector but also measures the changes in the angle of reflection of the laser array in order to determine the local sample bow height and surface tilt angle.

Film Stress

To generate a thin-film stress map of a sample, the local curvature of the sample must be determined both pre- and post-deposition. The point-by-point thin-film stress is determined based on the change in the point-by-point curvature from the pre- and post-process curvature maps, as well as the substrate thickness, the biaxial modulus of the substrate and the film thickness. The changes in stress of a thin film after processing may also be determined from the curvature maps measured after the subsequent processing steps.

kSA MOS ThermalScan includes all the capabilities of the kSA MOS UltraScan, and adds an integrated heating chamber with process gas introduction capabilities for thermal stress analysis up to 1000 °C. Scans are fully programmable and extremely repeatable for selected area, line scan, or full area map (depending on model selected). The system also provides quantitative film stress analysis with full area spatial map by first scanning the bare substrate and then re-scanning the sample post-process. Unmatched curvature, stress, and bow analysis capabilities are at your fingertips for obtaining large sample uniformity profiles and/or localized isolation of sub-millimeter areas of interest with very high spatial resolution.

Thermomechanical Characterization of Polymer Thin Films. Application for the Conception and the Manufacturing of a 3D Interposer
Lionel Vignoud, Nicolas Assigbe, Christine Morin, Jérome DeChamp, Lucile Roulet

2019 International Wafer-Level Packaging Conference

Broadband High-Reflection Dielectric PVD Coating with Low Stress and High Adhesion on PMMA
Zizheng Li, Qiang Li, Xiangqian Quan, Xin Zhang, Chi Song, Haigui Yang, Xiaoyi Wang and Jinsong Gao

Coatings 2019, 9(4), 237 https://doi.org/10.3390/coatings9040237

Finite-Element-Method Study of the Effect of Thin-Film Residual Stresses on High-Order Aberrations of Deformable Mirrors
Yaoping Zhang, Guoyun Long, Hong Zhou, Junqi Fan, Hao Cui, Lin Cheng

Surface and Coatings Technology, Volume 366, 25 May 2019, Pages 35-40 https://doi.org/10.1016/j.surfcoat.2019.01.119

On the Properties of WC/SiC Multilayers
Mauro Prasciolu and Saša Bajt

Applied Sciences 2018, 8(4), 571; doi:10.3390/app8040571

The Advantages of Coupling Experimental Methods and Analytical Modelling to Fix Deformation Problems in Devices Conception and Manufacturing
Lionel VIGNOUD ; Christine MORIN ; Nicolas ASSIGBE ; Guillaume PARRY ; Rafael ESTEVEZ

2018 IEEE CPMT Symposium Japan (ICSJ) https://doi.org/10.1109/ICSJ.2018.8602522

Effect of Residual Gas on Structural, Electrical and Mechanical Properties of Niobium Films Deposited by Magnetron Sputtering Deposition
Lanruo Wang, Yuan Zhong, Jinjin Li, Wenhui Cao, Qing Zhong, Xueshen Wang, and Xu Li

Mater. Res. Express 5 (2018) 046410

Direct, CMOS InLine Process Flow Compatible, Sub 100 °C Cu–Cu Thermocompression Bonding Using Stress Engineering
Asisa Kumar Panigrahi, Tamal Ghosh, C. Hemanth Kumar, Shiv Govind Singh, Siva Rama Krishna Vanjari

Electronic Materials Letters (2018) 14:32 8–335

Structural and Magnetic Properties of Ultra-Thin Fe Films on Metal-Organic Chemical Vapour Deposited GaN(0001)
Jun-Young Kim, Adrian Ionescu, Rhodri Mansell, Ian Farrer, Fabrice Oehler, Christy J. Kinane, Joshaniel F. K. Cooper, Nina-Juliane Steinke, Sean Langridge, Romuald Stankiewicz, Colin J. Humphreys, Russell P. Cowburn, Stuart N. Holmes, and Crispin H. W. Barnes

Journal of Applied Physics 121, 043904 (2017); doi: 10.1063/1.4973956

Cyclic Mechanical Behavior of Thin Layers of Copper: A Theoretical and Numerical Study
Klaus Fellner, Thomas Antretter, Peter F Fuchs and Tiphaine Pélisset

J Strain Analysis, 2016, Vol. 51(2) 161-169

Thermal Conductivity of Sputtered Amorphous Ge Films
Zhan, Tianzhuo, Yibin Xu, Masahiro Goto, Yoshihisa Tanaka, Ryozo Kato, Michiko Sasaki, and Yutaka Kagawa

AIP Advances 4, no. 2 (2014): 027126

Passivation of AlGaN/GaN HEMT by Silicon Nitride
Dayal, S., Sunil Kumar, Sudhir Kumar, H. Arora, R. Laishram, R. K. Chaubey, and B. K. Sehgal

Physics of Semiconductor Devices, pp. 141-143. Springer International Publishing, 2014

Thermal Stability on Mo/B4C Multilayers
Barthelmess, Miriam, and Saša Bajt.

International Society for Optics and Photonics, 2011

GaN-Based LEDs Grown on 6-inch Diameter Si (111) Substrates by MOVPE
Zhu, D., C. McAleese, K. K. McLaughlin, M. Häberlen, C. O. Salcianu, E. J. Thrush, M. J. Kappers et al

SPIE OPTO: Integrated Optoelectronic Devices, pp. 723118-723118. International Society for Optics and Photonics, 2009

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