The k-Space Integrated Control for Epitaxy system (ICE) is a modular in situ metrology tool designed for today’s MOCVD and MBE reactors. It combines kSA MOS, kSA BandiT and kSA RateRat Pro patented technologies along with an Emissivity Corrected Pyrometry (ECPR) module. The kSA ICE modular design allows the user to specify which modules will be used in their kSA ICE configuration.

The k-Space Integrated Control for Epitaxy system (ICE) is a modular in situ metrology tool designed for today’s MOCVD and MBE reactors. It combines kSA MOS, and kSA RateRat Pro patented technologies along with an Emissivity Corrected Pyrometry (ECPR) module. The kSA ICE modular design allows the user to specify which modules will be used in their kSA ICE configuration.

By integrating these various measurement modules into a single optics head, the kSA ICE metrology system is capable of measuring real-time temperature, reflectivity, growth rate, film thickness, substrate curvature and film stress.  The kSA ICE tool can handle wafer-resolved measurement for rotation speeds up to 1,500 RPM. Keep cool while gaining insight into your MOCVD or MBE process, maximizing device performance, and limiting process variation to increase yields with kSA ICE!

For more information see the ICE for MOCVD Product Specification Sheet →
For more information see the ICE for MBE Product Specification Sheet →

The kSA ICE can incorporate three temperature measurement modules.

BandiTtemp

 

An In Situ Monitored and Controlled Etch Process to Suppress Mg Memory Effects in MOCVD GaN Growth on Si Substrate
Rohith Soman, Srinivasan Raghavan, and Navakanta Bhat

Semiconductor Science and Technology, Volume 34, Number 12; https://doi.org/10.1088/1361-6641/ab5006

Buried Channel Normally-Off AlGaN/GaN MOS-HEMT with a pn Junction in GaN Buffer
Rohith Soman, Manish Sharma, Nayana Ramesh, Digbijoy Nath, R Muralidharan, K N Bhat, Srinivasan Raghavan, and Navakanta Bhat

Semiconductor Science and Technology, Volume 33, Number 9; doi.org/10.1088/1361-6641/aad2bb

Phase Degradation in BxGa1−xN Films Grown at Low Temperature by Metalorganic Vapor Phase Epitaxy
Brendan P.Gunning, Michael W.Moseley, Daniel D.Koleske, Andrew A.Allerman, Stephen R.Lee

Journal of Crystal Growth, Vol 464, 2017, pp. 190-196

Mocvd Growth of Group-III Nitrides on Silicon Carbide: From Thin Films to Atomically Thin Layers
Zakaria Y. Al Balushi

The Pennsylvania State University, 2017

Visible-Blind APD Heterostructure Design With Superior Field Confinement and Low Operating Voltage
John Bulmer, Puneet Suvarna, Jeff Leathersich, Jonathan Marini, Isra Mahaboob, Neil Newman, F. Shadi Shahedipour-Sandvik

IEEE Photonics Technology Letters (Volume:28, Issue: 1) 2015

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