k-Space Associates, Inc.

New Research References Using kSA Metrology Tools

published on 03/18/2019

Do you want to know how k-Space metrology tools are used by researchers? Learning how others incorporate these tools into their own research can spark new ideas and provide valuable insight. Recently, we have added the following three new references to the website:

kSA 400 (analytical RHEED system)

Konfederatova, K.A., Mansurov, V.G., Malin, T.V. et al. (2018). Role of the phase transition at GaN QDs formation on (0001)AlN surface by ammonia molecular beam epitaxy. Journal of Thermal Analysis and Calorimeter (2018) 133: 1181. https://doi.org/10.1007/s10973-018-7280-1

In this research, the kSA 400 was used to measure the RHEED pattern evolution and analyze the diffraction spot behavior for the GaN growth mode 2D-3D transition as well as the QDs formation process.

kSA MOS ThermalScan (wafer bow, wafer stress, and wafer curvature measurement under temperature changes) –

Vignoud, L., Morin, C., Assigbe, N., Parry, G., Estevez, R. (2018). The advantages of coupling experimental methods and analytical modelling to fix deformation problems in devices conception and manufacturing. 2018 IEEE CPMT Symposium Japan (ICSJ). https://doi.org/10.1109/ICSJ.2018.8602522.

 This symposium paper provides detail on the use of the kSA MOS ThermalScan tool to help fix and prevent deformation problems in device manufacturing. The abstract states:

In this article, we introduce a new technique of measurement composed of an optical module producing and measuring an array of parallel laser beams, a high resolution scanning stage, a rapid thermal processing (RTP) chamber and several accessorial gas control modules. The kSA MOS [ThermalScan] allows us to measure the mean stress in the deposited layer, by using curvature variation of the wafer before and after the deposition step and during thermal loads. In the case of evolving materials, we estimate significant mechanical transition temperatures (polymers) or the number of thermal cycling needed to stabilize the microstructure (metals). Furthermore, this methodology allows us to extract the thermal expansion coefficient (CTE) from the slope of the linear system of the stress-temperature curve.”

kSA MOS (thin-film stress measurement)

Gallagher, J, Anderson, T., Luna, L., Koehler, A., Hite, J., Mahadik, N., Hobart, K., Kub, F. Long range, non-destructive characterization of GaN substrates for power devices. (2019). Journal of Crystal Growth, Volume 506, 15 January 2019, Pages 178-184.

kSA MOS was used for bow measurement in this research. One of four samples had a large bow as measured by the kSA MOS. With this and additional information, they concluded that a low-quality substrate can result in a low-quality film.

You can find additional references listed under each product page as well as a list of references for all products combined. If you would like to add your research reference to our site, please contact us at [email protected]