k-Space Associates, Inc.

kSA MOS References

k-Space references are a compilation of published papers that either offer a review of the techniques used by the kSA MOS, or specifically use the kSA MOS for work within the paper.

Effect of Intrinsic Stress on Structural and Optical Properties of Amorphous Si-Doped SnO2 Thin-Film
Honglong Ning, Xianzhe Liu, Hongke Zhang, Zhiqiang Fang, Wei Ca, Jianqiu Chen, Rihui Yao, Miao Xu, Lei Wang, Linfeng Lan, Junbiao Peng, Xiaofeng Wang and Zichen Zhang

Materials 2017, 10, 24

In situ stress observation in oxide films and how tensile stress influences oxygen ion conduction
Aline Fluri, Daniele Pergolesi, Vladimir Roddatis, Alexander Wokaun and Thomas Lippert

Nature Communications 10.1038/ncomms10692 (2016)

Volmer-Weber growth stages of polycrystalline metal films probed by in situ and real-time optical diagnostics.
G. Abadias, L. Simonot, J.J. Colin, A. Michel, S. Camelio, and D. Babonneau

Appl. Phys. Lett. 107, 183105 (2015)

Porous Thick Film Lanthanum Strontium Ferrite Stress and Oxygen Surface Exchange Bilayer Curvature Relaxation Measurements
Qing Yang and Jason D. Nicholas

Journal of The Electrochemical Society, 161 (11) F3025-F3031 (2014)

In Situ Measurement of CuPt Alloy Ordering Using Strain Anisotropy
Ryan M. France, William E. McMahon, Joongoo Kang, Myles A. Steiner, and John F. Geisz

Journal of Appl. Physics, 115, 053502, 2014

In situ oxygen surface exchange coefficient measurements on lanthanum strontium ferrite thin films via the curvature relaxation method
Qing Yang, Theodore E. Burye, Richard R. Lunt, and Jason D. Nicholas

Solid State Ionics 249–250 (2013) 123–128

In Situ Combined Synchrotron X-Ray Diffraction and Wafer Curvature Measurements During Formation of Thin Palladium Silicide Film on Si(001) and Si(111)
J. Fouet, M.I. Richard, C. Mocuta, C. Guichet, O. Thomas

Nuclear Instruments and Methods in Physics Research, B 284 (2012), pp 74-77

In Situ Stress Evolution During Growth of Transition Metal Nitride Films and Nanocomposites
G. Abadias, L.E. Koutsokeras, P.A. Patsalas, W. Leroy, D. Delpa, S.V. Zlotsi, V.V. Uglov

Nanomaterials: Applications and Properties (NAP-2011). Vol.1, PartII

In situ Measurement of Biaxial Modulus of Si Anode for Li-ion Batteries
V.A. Sethuraman, M.J. Chon, M. Shimshak, N. Van Winkle, P.R. Guduru

Electrochemistry Communications, 12(11), 1614-1617 2010

In situ measurement of the internal stress evolution during sputter deposition of ZnO:Al
S. Michotte, J.Proost

Solar Energy Materials & Solar Cells 98 (2012) 253–259

Periodic variation of stress in sputter deposited Si/WSi2 multilayers
Kimberly MacArthur, Bing Shi, Ray Conley and Albert T. Macrander

Applied Physics Letters 99, 081905 (2011)

On the use of a multiple beam optical sensor for in situ curvature monitoring in liquids
Q. Van Overmeere, J.-F. Vanhumbeeck, and J. Proost

Review of Scientific Instruments 81, 045106, 2010

The NSLS-II Multilayer Laue Lens Deposition System
Ray Conley, Nathalie Bouet, James Biancarosa, Qun Shen, Larry Boas, John Feraca, Leonard Rosenbaum

SPIE 2009

Correlation of growth stress and structural evolution during metalorganic chemical vapor deposition of GaN on (111) Si
Srinivasan Raghavan, Xiaojun Weng, Elizabeth Dickey, and Joan M. Redwing, Department of Materials Science and Engineering, Materials Research Institute, The Pennsylvania State University

Appl. Phys. Lett. Vol. 88, 041904, 2006

Growth stresses and cracking in GaN films on (111) Si grown by metal-organic chemical vapor deposition. I. AlN buffer layers
Srinivasan Raghavan and Joan Redwing Department of Materials Science and Engineering, Materials Research Institute, The Pennsylvania State University

Journal of Appl. Physics, 98, 023514, 2005

Growth stresses and cracking in GaN films on (111) Si grown by metal-organic chemical vapor deposition. I. AlN buffer layers
Srinivasan Raghavan and Joan Redwing Department of Materials Science and Engineering, Materials Research Institute, The Pennsylvania State University

Journal of Appl. Physics, 98, 023514, 2005

Growth stresses and cracking in GaN films on (111) Si grown by metal-organic chemical vapor deposition. II. Graded AlGaN buffer layers
Srinivasan Raghavan and Joan Redwing, Department of Materials Science and Engineering, Materials Research Institute, The Pennsylvania State University

Journal of Appl. Physics, 98, 023515, 2005

Evolution of surface morphology and film stress during MOCVD growth of InN on sapphire substrates
Abhishek Jain, Srinivasan Raghavan, Joan M. Redwing, Department of Materials Science and Engineering, Materials Research Institute, The Pennsylvania State University

Journal of Crystal Growth 269 128-133, 2004

In situ stress measurements during MOCVD growth of AlGaN on SiC
Jeremy D. Acord, Srinivasan Raghavan, David W. Snyder, Joan M. Redwing, Materials Research Institute and Applied Research Laboratory, The Pennsylvania State University

Journal of Crystal Growth 272, 65-71, 2004

Effect of AlN interlayers on growth stress in GaN layers deposited on (111) Si
Srinivasan Raghavan, Xiaojun Weng, Elizabeth Dickey, and Joan M. Redwing, Department of Materials Science and Engineering, Materials Research Institute, The Pennsylvania State University

Appl. Phys. Lett. Vol. 87, 142101 2005

Real-time strain evolution during growth of InxAl1-xAs/GaAs metamorphic buffer layers
C. Lynch, R. Beresford, and E. Chason, Brown University

J. Vac. Sci. Technol. B 22, 1539 2004

Evolution of the growth stress, stiffness, and microstructure of alumina thin films during vapor deposition
Joris Proost and Frans Spaepen, Harvard University

Journal of Appl. Phys., Vol. 91, No. 1, 1 Jan. 2002

Intrinsic stress development in Ti-C:H ceramic nanocomposite coatings
B. Shi and W. J. Meng – Louisiana State University
L. E. Rehn and P. M. Baldo – Argonne National Laboratory

Appl. Phys. Lett., Vol. 81, No.2, 8 July 2002

Stress evolution during metalorganic chemical vapor deposition of GaN
S. Hearne, E. Chason, J. Han, J. A. Floro, J. Figiel, and J. Hunter, H. Amano, I. S. T. Tsong

Appl. Phys. Lett. Vol. 74, no. 3, 1999

Stress Evolution in Sputtered FCC Metal Multilayers
Vidya Ramaswamy, William D. Nix, and Bruce M. Clemens

Stanford University

Stress Evolution During Growth of Sputtered Ni/Cu Multilayers
Vidya Ramaswamy, Bruce M. Clemens, and William D. Nix

Stanford University 1997

Stress and Defect Control in GaN Using Low Temperature Interlayers
Hiroshi Amano, Motoaki Iwaya, Takayuki Kashima, Maki Katsuragawa, Isamu Akasaki, Jung Han, Sean Hearne, Jerry A. Floro, Eric Chason and Jeffrey Figiel

Appl. Phys. Part.1, Vol. 37, no.12B, 1998

Real Time Measurement of Epilayer Strain Using a Simplified Water Curvature Technique
J. A. Floro, E. Chason, and S. R. Lee

Sandia National Laboratories 1996

Measuring Ge segregation by real-time stress monitoring during Si 1-xGe x molecular beam epitaxy
J. A. Floro and E. Chason

Appl. Phys. Lett 69, 1996 (p. 3830)

Measuring Ge segregation by real-time stress monitoring during Si 1-xGe x molecular beam epitaxy
J. A. Floro and E. Chason

Appl. Phys. Lett 69, 1996 (p. 3830)