Products
kSA MOS Ultra-Scan and Thermal-Scan
2D Stress Mapping - RT-1200C
The kSA MOS Ultra and Thermal Scan are flexible, high-resolution scanning curvature and tilt-measurement systems. Based on the proven technology of our standard in-situ kSA MOS system, they use a 2D laser array to map the two-dimensional curvature and stress of semiconductor wafers, optical mirrors, lenses— practically any polished surface.
The Ultra-Scan system provides quantitative film stress analysis with full area map by first scanning the bare substrate and then re-scanning the sample post-process, while the Thermal-Scan system adds a rapid thermal annealing chamber with gas introduction capability to fully characterize thermal stress at temperatures up to 1200 °C.
Scans are fully programmable for selected area, line scan, or full area map. Leveraging kSA’s patented MOS technology provides for 10x the resolution and repeatability compared with any other curvature-based stress measurement system. The standard system provides a 200 mm x,y scanning range with 2 um scanning resolution. Optionally, larger scanning stages and heating systems are available.
Materials
Semiconductor wafers (Si, SOI, compound semi)
High performance optical coatings (mirrors, lenses, glass)
Options
High Resolution Detector
High-resolution digital detector and frame grabber featuring a 2x increase in curvature resolution.
Table Top
Compact enclosure design with remote computer and without integrated stand for a smaller footprint and flexible installation in lab environments.
Thermal Scan
Complete system with integrated vacuum chamber for full analysis and temperature control for ramping and annealing of wafers up to 4”.
References
References
k-Space references are a compilation of published papers that either offer a review of the techniques used by the kSA MOS Ultra-Scan, or specifically use the kSA MOS Ultra-Scan for work within the paper.
- There are no references at this time, however, you may wish to see the MOS references because the Ultra-Scan is an ex-situ tool built on MOS technology.
General Documents
- kSA MOS Ultra-Scan flyer
- Two-page flyer describing the features of the kSA MOS Ultra-Scan
- kSA MOS Thermal-Scan flyer
- Two-page flyer describing the features of the kSA MOS Thermal-Scan
- kSA MOS Ultra-Scan Product Spec
- Product Specification for the Mos Ultra-Scan
Application Notes
kSA MOS Ultra-Scan Application Notes are documents written about a specific component or components of the kSA MOS Ultra-Scan curvature and stress measurement system. These documents are designed to explain details of the kSA MOS Ultra-Scan capabilities and aid the user in maximizing the utility of the system. k-Space User Manuals are available for download as well by contacting us.
Note that some documents contain proprietary information, and therefore are password protected. At this time, if you are a k-Space customer, please email us and we will send you the document.
- kSA MOS Ultra-Scan: Performance Test Data, 200mm Patterned Silicon Wafers (05-28-09)
- 300mm SOI Wafer Curvature Repeatability Study (07-28-06)
White Papers
k-Space white papers are documents that describe a technology or technologies utilized by a k-Space product. White papers may also include calibration procedures, application to various technologies, or comparisons with similar products.
Note that some documents may contain proprietary information, and therefore are password protected. If you are a k-Space customer, please email us requesting a username and password, and we will respond via email with a proper username and password, allowing you access to the document.
- Resolution and sensitivity of stress measurements with the k-Space Multi-beam Optical Sensor (MOS) System (05-19-04)
- Eric Chason
- Sandia National Laboratories
- kSA MOS Ultra-Scan: Scanning Curvature and Stress Measurement System (04-14-05)
- A PDF presentation describing the kSA MOS Ultra-Scan system, including both hardware and software components. Data taken using the MOS Ultra-Scan is also presented, including stress measured on a Si wafer and a full wafer curvature map.