


Products
kSA 400 Analytical RHEED
The World's Leading RHEED Analysis System
RHEED, or Reflection High Energy Electron Diffraction, is a popular thin-film diagnostic technique offering a wealth of valuable information. Here is what you need for RHEED.
Now in its fifth generation, the kSA 400 seamlessly provides you with the most information from your RHEED pattern, whether you are analyzing a static diffraction pattern or acquiring data during high-speed substrate rotation.
Use your kSA 400 for a variety of tasks, including:
- Growth rate
- Lattice spacing/strain
- Surface coherence
- Surface structure/reconstruction
- Multiple azimuth acquisition during sample rotation
with additional Plug-in Options:
- Low Energy Electron Diffraction (LEED)
- Phase-Locked Epitaxy
- Auger/X-Ray Photoemission Spectroscopy
- Electron Gun Control
- Rotation Monitoring and Triggering
We have installed the kSA 400 on just about every molecular beam epitaxy (MBE) chamber type there is, including Riber, DCA, Veeco, VG Scienta, and have customized flange mounts readily available.
In addition, newly developed RHEED Gun technology allows the kSA 400 to be tailored for advanced sputtering and PLD applications. With over 500 systems in operation, our customers include leading industrial sites, national laboratories, and universities around the world.
Materials
Single crystal or Polycrystalline materials.
Options
Multi-wafer, plug-ins, rotational triggering.
Accessories
Screens
RMAT (Rotation Monitoring and Triggering)
Pulse Control
Software Upgrade (downloadable)
Plug-In Options
With the kSA 400, you can analyze RHEED oscillations, perform reconstruction evolution analysis, diffraction pattern analysis, acquire from multiple azimuths, and measure growth rate, lattice spacing/strain, and surface coherence / structure / reconstruction. These plug-in options add to the capability of the kSA 400 analytical RHEED software.
LEED (Low-Energy Electron Diffraction)
The kSA 400 is ideal for LEED imaging. The LEED IV plug-in automatically tracks the evolution of the Low Energy Electron Diffraction pattern to obtain Intensity versus Voltage accelerating. In addition, acquire a movie of the entire acquisition for later playback and analysis.
Phase-Locked Epitaxy
The kSA 400 PLE plug-in option automatically controls layer-by-layer growth by using real-time monitoring of RHEED oscillations to automate shutter open and close times. This yields atomic-level accuracy and reproducible results for thin films.
Auger/X-Ray Photoemission Spectroscopy
The kSA 400 Auger/XPS Photoemission Spectroscopy plug-in option gives you an inexpensive and easy way to acquire Auger Electron Spectroscopy (AES) and X-ray Photoemission Spectroscopy (XPS) data via the kSA 400 system. AES and XPS are both powerful techniques for surface analysis, relying on material-specific photoelectron energy signatures from either electron (AES) or X-ray (XPS) induced photoelectron emission.
Electron Gun Control / Beam Rocking
The kSA 400 Electron Gun Control plug-in option allows for full control of electron guns. Store gun control settings and immediately ramp to them, fine tuning while simultaneously viewing the diffraction pattern and acquiring Reflection High Energy Electron Diffraction (RHEED) rocking curves--all with the click of the mouse.
Rotation Monitoring and Triggering
The Rotation Monitoring and Triggering (RMAT) product was developed by k-Space to meet the needs of scientists and engineers who desire an accurate, programmable trigger source coupled to a rotation stage during thin-film deposition. With the RMAT, the user can program precise trigger positions during rotation, and use these triggers to initiate external events such as the acquisition of analytical images at specific rotation angles.
Flange Mounts
k-Space provides a multitude of flange mounting assemblies for a variety of vacuum chambers and flanges, concealing and protecting imager and optics, and providing a light-tight environment.
References
k-Space references are a compilation of published papers that either offer a review of the techniques used by the kSA 400, or specifically use the kSA 400 for work within the paper.
Reviews on RHEED
Introduction to RHEED
A.S. Arrot
Ultrathin Magnetic Structures I, Springer-Verlag, 1994, pp. 177-220
A Review of the Geometrical Fundamentals of RHEED with Application to Silicon Surfaces
John E. Mahan, Kent M. Geib, G.Y. Robinson, and Robert G. Long
J.V.S.T. A 8, 1990, pp. 3692-3700
Reflective High Energy Electron Diffraction (RHEED)- A Unique Tool For In-Situ Growth Monitoring
Oleg Maksimov, Material Research Institute, Pennsylvania State University
Vacuum Technology and Coating, August 2008
kSA 400 References
In Situ Composition Monitoring Using RHEED for SrTiO3 Thin Films Grown by Reactive Coevaporation
Luke S.-J Peng and Brian H. Moeckly, J.V.S.T. A 22, 2004, pp. 2437-2439
RHEED Monitoring of Rotating Samples During Large-Area Homogeneous Deposition of Oxides
V. C. Matijasevic, Z. Lu, K. Von Dessonneck, C. Taylor, D. Barlett
MRS Fall Meeting, 1997
Growth and magnetic properties of Co x Ni 1-x ultrathin films on Cu(100)
F. O. Schumann, S. Z. Wu, G. J. Mankey, and R. F. Willis
Physical Review B, Vol. 56, no.5, 1997
Smoothening of Cu films grown on Si(001)
R. A. Lukaszew, Y. Sheng, C. Uher, and R. Clarke
Appl. Phys. Lett., Vol. 76, no.6, 2000
Temperature-Dependent Strain Relaxation and Islanding of Ge/Si(111)
P. W. Deelman, L. J. Schowalter, and T. Thundat
Proc. Materials Research Society Vol. 399 (1996)
Structural transition in epitaxial Co-Cr superlattices
W. Vavra, D. Barlett, S. Elagoz, C. Uher, and R. Clarke
Physical Review B Vol. 47, no.9, 1993
Resonant RHEED Study of Cu 3Au(111) Surface Order
S. W. Bonham and C. P. Flynn
University of Illinois at Urbana-Champaign
Molecular Beam Epitaxial Growth of InAs/AlGaAsSb Deep Quantum Wells on GaAs Substrates
N. Kuze, H. Goto, S. Miya, S. Muramatsu, M. Matsui, I. Shibasaki
Proc. Materials Reearch Society Vol. 3999 (1996)
Studies of Exchange Coupling in Fe(001) Whisker/Cr/Fe Structures using BLS and RHEED Techniques
B. Heinrich, M. From, J. F. Cochran, L. X. Liao, Z. Celinski, C. M. Schneider and K. Myrtle
Mat. Res. Soc. Symp. Proc. Vol. 313
The Use of RHEED Intensities for the Quantitative Characterization of Surfaces
Y. Ma, S. Lordi and J. A. Eades
Proc. Materials Research Society Vol. 399 (1996)
The molecular beam epitaxy growth of InGaAs on GaAs(100) studied by in situ scanning tunneling microscopy and reflection high-energy electron diffraction
C. W. Snyder, D. Berlett, B. G. Orr, P. K. Bhattacharya and J. Singh
J. Vac. Sci. Technol. B 9 (4), Jul/Aug 1991
Morphology Transition and Layer-by-Layer Growth of Rh(111)
F. Tsui, J. Wellman, C. Uher, and Roy Clarke
Physical Review Letters, Vol. 76, no. 17, 1996
CCD-Based RHEED Detection and Analysis System
D. Barlett, C.W. Snyder, B.G. Orr, and Roy Clarke
Rev. Sci. Instrum. 62, 1991, pp. 1263-1269
General Documents
kSA 400 flyer
Two-page flyer describing the features of the kSA 400
What you need for RHEED
This document describes what equipment you need to do RHEED in addition to the kSA 400
kSA 400 Specifications
Twelve page document describing hardware/software specification in detail
White Papers
k-Space white papers are documents that describe a technology or technologies utilized by a k-Space product. White papers may also include calibration procedures, application to various technologies, or comparisons with similar products.
Note that some documents may contain proprietary information, and therefore are password protected. If you are a k-Space customer, please email us requesting a username and password, and we will respond via email with a proper username and password, allowing you access to the document.
Growth Rate Methods (1-21-05)
The kSA 400 has three independent methods for calculating growth rate from RHEED intensity oscillations. This document describes in detail these methods and how to use them within the kSA 400 software.
The Discovery (09-01-01)
Motorola Labs solves a 30-year semiconductor industry puzzle.
Image Processing Speeds Wafer Analysis (02-01-02)
By integrating available hardware and software, an imaging system can examine semiconductor-wafer-material deposition at high speed. Vision Systems Design, February 2002
