- kSA 400
- kSA BandiT
- kSA BandiT PV
- kSA MOS
- kSA MOS Ultra/Thermal Scan
- kSA RateRat Pro
- kSA ICE
Introduction to RHEED
A Review of the Geometrical Fundamentals of RHEED with Application to Silicon Surfaces
John E. Mahan, Kent M. Geib, G.Y. Robinson, and Robert G. Long
Reflective High Energy Electron Diffraction (RHEED)- A Unique Tool For In-Situ Growth Monitoring
Oleg Maksimov, Material Research Institute, Pennsylvania State University
In Situ Composition Monitoring Using RHEED for SrTiO3 Thin Films Grown by Reactive Coevaporation
Luke S.-J Peng and Brian H. Moeckly
RHEED Monitoring of Rotating Samples During Large-Area Homogeneous Deposition of Oxides
V. C. Matijasevic, Z. Lu, K. Von Dessonneck, C. Taylor, D. Barlett
Growth and magnetic properties of Co x Ni 1-x ultrathin films on Cu(100)
F. O. Schumann, S. Z. Wu, G. J. Mankey, and R. F. Willis
Smoothening of Cu films grown on Si(001)
R. A. Lukaszew, Y. Sheng, C. Uher, and R. Clarke
Temperature-Dependent Strain Relaxation and Islanding of Ge/Si(111)
P. W. Deelman, L. J. Schowalter, and T. Thundat
Structural transition in epitaxial Co-Cr superlattices
W. Vavra, D. Barlett, S. Elagoz, C. Uher, and R. Clarke
Resonant RHEED Study of Cu 3Au(111) Surface Order
S. W. Bonham and C. P. Flynn
Molecular Beam Epitaxial Growth of InAs/AlGaAsSb Deep Quantum Wells on GaAs Substrates
N. Kuze, H. Goto, S. Miya, S. Muramatsu, M. Matsui, I. Shibasaki
Studies of Exchange Coupling in Fe(001) Whisker/Cr/Fe Structures using BLS and RHEED Techniques
B. Heinrich, M. From, J. F. Cochran, L. X. Liao, Z. Celinski, C. M. Schneider and K. Myrtle
The Use of RHEED Intensities for the Quantitative Characterization of Surfaces
Y. Ma, S. Lordi and J. A. Eades
The molecular beam epitaxy growth of InGaAs on GaAs(100) studied by in situ scanning tunneling microscopy and reflection high-energy electron diffraction
C. W. Snyder, D. Berlett, B. G. Orr, P. K. Bhattacharya and J. Singh
Morphology Transition and Layer-by-Layer Growth of Rh(111)
F. Tsui, J. Wellman, C. Uher, and Roy Clarke
CCD-Based RHEED Detection and Analysis System
D. Barlett, C.W. Snyder, B.G. Orr, and Roy Clarke
Exploit the Power of RHEED!
The kSA 400 puts the power of Reflection High-Energy Electron Diffraction (RHEED) at your fingertips. Whether analyzing a static diffraction pattern, or acquiring data during high-speed substrate rotation, the kSA 400 helps you exploit the valuable wealth of information contained within the RHEED pattern. The kSA 400 combines a high-resolution, high-speed, and high-sensitivity CCD camera with sophisticated RHEED-specific acquisition and analysis software. This flexible system enables the analysis of virtually any image feature and, with one of many additional options, controls the electron gun for such tasks as acquiring RHEED rocking curves.
Easy to use and straightforward to install, the kSA 400 is designed for convenience and gives quantitative results right out of the box. Seamless integration between hardware and software as well as visually-driven analysis makes user operation straightforward and simple. Extensive customer input has helped us make the kSA 400 the industry’s most powerful analytical RHEED system and an integral part of MBE, PLD, PVD, and surface science chambers worldwide. Now in its fifth generation, the goal of the kSA 400 is to provide you with the most information from your RHEED pattern. See the kSA 400 in action.
Probably the most common use of RHEED is for determining growth rate via RHEED intensity oscillations, a phenomena that occurs during layer-by-layer epitaxial growth. The kSA 400 determines growth rate via three complimentary methods: Fourier-transform, extrema count (derivative analysis), and damped sine wave fitting. These three techniques determine growth rate independently, resulting in very accurate and consistent measurement of your thin-film growth rate.
Watch the kSA 400 monitor RHEED oscillations.
Another powerful use for RHEED is to determine the absolute atomic spacing, or lattice spacing, between atoms on a surface. The kSA 400 makes measuring absolute lattice spacing simple. Furthermore, if you’d like to measure the evolution of lattice spacing, or the strain of lattice mismatched growth, the kSA 400 makes this easy too. By monitoring the spacing between diffraction streaks using sophisticated, proven analysis algorithms, strain evolution with very high accuracy and resolution is at your fingertips with the kSA 400.
The kSA 400 makes analyzing surface structure easy. By acquiring
RHEED images along the major crystal directions of the surface, measuring the pixel spacing and calculating a ratio, surface crystal structure can easily be determined. The kSA 400 also makes acquiring and archiving RHEED patterns a snap. The kSA 400 software contains a comprehensive RHEED Image Library (RIL) for reference and further analysis.
kSA 400 Plug-Ins
The kSA 400 supports several plug-in options to give you even more analytical capability. These plug ins include:
- Electron Gun Control
- LEED IV (Low Energy Electron Diffraction)
- PLE (Phase-Locked Epitaxy)
- Rotation Monitoring and Triggering
- Auger/XPS Acquisition
These options can be added to a standard kSA 400 system at any time, and typically include a software plug-in and hardware additions. One of our most popular plug-in options is RHEED Electron Gun Control, which allows you to control all the settings of your RHEED gun through the kSA 400 software. The kSA 400 software also allows you to acquire RHEED images while varying gun control parameters e.g. beam rocking acquisition which is supported on Staib
beam rocking electron guns.
What You Get With a kSA 400 System
- High resolution, high S/N camera
- Optic Mounts for mounting to the RHEED screen viewport
- Appropriate cabling
- kSA 400 software (runs on Win XP or Win 7 32-bit or 64-bit)
- kSA 400 RHEED Image Library
- Computer (optional)
- Product Specifications Data Sheet RHEED Image Library Electron Gun Control Flyer RMAT Flyer LEED IV Flyer PLE Flyer Auger/XPS Flyer
- Unleash the Power of RHEED with the kSA 400 kSA 400 and kSA BandiT in Action at Customer Site Molecular-Beam Epitaxy (MBE) at Work with kSA 400
kSA offers per-sample testing and analysis services using our most advanced optical metrology tools.
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