k-Space Associates, Inc.

Article References

k-Space references are a compilation of published papers that either offer a review of the techniques used by the kSA 400, or specifically use the kSA 400 for work within the paper.

Review on RHEED – Introduction to RHEED
A.S. Arrot

Ultrathin Magnetic Structures I, Springer-Verlag, 1994, pp. 177-220

Review on RHEED – A Review of the Geometrical Fundamentals of RHEED with Application to Silicon Surfaces
John E. Mahan, Kent M. Geib, G.Y. Robinson, and Robert G. Long

J.V.S.T. A 8, 1990, pp. 3692-3700

Review on RHEED – Reflective High Energy Electron Diffraction (RHEED)- A Unique Tool For In-Situ Growth Monitoring
Oleg Maksimov, Material Research Institute, Pennsylvania State University

Vacuum Technology and Coating, August 2008

Two magnon scattering and anti-damping behavior in a two-dimensional epitaxial TiN/Py(tPy)/b-Ta(tTa) system
Nilamani Behera, Ankit Kumar, Sujeet Chaudhary and Dinesh K. Pandya

RSC Adv., 2017, 7, 8106

A prospective submonolayer template structure for integration of
functional oxides with silicon
Dmitry V. Averyanov, Christina G. Karateeva, Igor A. Karateev, Andrey M. Tokmachev, Mikhail V. Kuzmin, Pekka Laukkanen , Alexander L. Vasiliev, Vyacheslav G. Storchak

Materials and Design 116 (2017) 616–621

In situ stress observation in oxide films and how tensile stress influences oxygen ion conduction
Aline Fluri, Daniele Pergolesi, Vladimir Roddatis, Alexander Wokaun and Thomas Lippert

Nature Communications 10.1038/ncomms10692 (2016)

Topotactic Synthesis of the Overlooked Multilayer Silicene Intercalation Compound SrSi 2
Andrey Tokmachev, Dmitry Averyanov, Igor Karateev, Oleg Parfenov, Alexander L. Vasiliev, Sergey Yakunin and Vyacheslav Storchak

Nanoscale, 20 Jul 2016

Atomic-Scale Engineering of Abrupt Interface for Direct Spin Contact of Ferromagnetic Semiconductor with Silicon
Dmitry V. Averyanov, Christina G. Karateeva, Igor A. Karateev, Andrey M. Tokmachev, Alexander L. Vasiliev, Sergey I. Zolotarev, Igor A. Likhachev & Vyacheslav G. Storchak

Scientific Reports | 6:22841 | DOI: 10.1038/srep22841

Disentanglement of Growth Dynamic and Thermodynamic Effects in LaAlO3/SrTiO3 Heterostructures
Chencheng Xu, Christoph Bäumer, Ronja Anika Heinen, Susanne Hoffmann-Eifert, Felix Gunkel & Regina Dittmann

Nature, Scientific Reports 6, Article Number:22410 (2016)

Nanocrystalline Ferroelectric BiFeO3 Thin Films by Low Temperature Atomic Layer Deposition
Mariona Coll, Jaume Gazquez, Ignasi Fina, Zakariaya Khayat, Andy Quindeau, Marin Alexe, Maria Varela, Susan Trolier-McKinstry , Xavier Obradors, and Teresa Puig

Chem. Mater. To be published 20 Aug 2015

In Situ Composition Monitoring Using RHEED for SrTiO3 Thin Films Grown by Reactive Coevaporation
Luke S.-J Peng and Brian H. Moeckly

J.V.S.T. A 22, 2004, pp. 2437-2439

RHEED Monitoring of Rotating Samples During Large-Area Homogeneous Deposition of Oxides
V. C. Matijasevic, Z. Lu, K. Von Dessonneck, C. Taylor, D. Barlett

MRS Fall Meeting, 1997

Growth and magnetic properties of Co x Ni 1-x ultrathin films on Cu(100)
F. O. Schumann, S. Z. Wu, G. J. Mankey, and R. F. Willis

Physical Review B, Vol. 56, no.5, 1997

Smoothening of Cu films grown on Si(001)
R. A. Lukaszew, Y. Sheng, C. Uher, and R. Clarke

Appl. Phys. Lett., Vol. 76, no.6, 2000

Temperature-Dependent Strain Relaxation and Islanding of Ge/Si(111)
P. W. Deelman, L. J. Schowalter, and T. Thundat

Proc. Materials Research Society Vol. 399 (1996)

Structural transition in epitaxial Co-Cr superlattices
W. Vavra, D. Barlett, S. Elagoz, C. Uher, and R. Clarke

Physical Review B Vol. 47, no.9, 1993

Resonant RHEED Study of Cu 3Au(111) Surface Order
S. W. Bonham and C. P. Flynn

University of Illinois at Urbana-Champaign

Molecular Beam Epitaxial Growth of InAs/AlGaAsSb Deep Quantum Wells on GaAs Substrates
N. Kuze, H. Goto, S. Miya, S. Muramatsu, M. Matsui, I. Shibasaki

Proc. Materials Reearch Society Vol. 3999 (1996)

Studies of Exchange Coupling in Fe(001) Whisker/Cr/Fe Structures using BLS and RHEED Techniques
B. Heinrich, M. From, J. F. Cochran, L. X. Liao, Z. Celinski, C. M. Schneider and K. Myrtle

Mat. Res. Soc. Symp. Proc. Vol. 313

The Use of RHEED Intensities for the Quantitative Characterization of Surfaces
Y. Ma, S. Lordi and J. A. Eades

Proc. Materials Research Society Vol. 399 (1996)

The molecular beam epitaxy growth of InGaAs on GaAs(100) studied by in situ scanning tunneling microscopy and reflection high-energy electron diffraction
C. W. Snyder, D. Barlett, B. G. Orr, P. K. Bhattacharya and J. Singh

J. Vac. Sci. Technol. B 9 (4), Jul/Aug 1991

Morphology Transition and Layer-by-Layer Growth of Rh(111)
F. Tsui, J. Wellman, C. Uher, and Roy Clarke

Physical Review Letters, Vol. 76, no. 17, 1996

CCD-Based RHEED Detection and Analysis System
D. Barlett, C.W. Snyder, B.G. Orr, and Roy Clarke

Rev. Sci. Instrum. 62, 1991, pp. 1263-1269

 

k-Space references are a compilation of published papers that either offer a review of the techniques used by the kSA BandiT, or specifically use the kSA BandiT for work within the paper.

Stacking InAs quantum dots over ErAs semimetal nanoparticles on GaAs (0 0 1) using molecular beam epitaxy
Yuanchang Zhang, Kurt G. Eyink, Lawrence Grazulis, Madelyn Hill, Joseph Peoples, Krishnamurthy Mahalingam

Journal of Crystal Growth, 2017.02.27

Electron-Beam Deposition of Superconducting Molybdenum Thin Films for the Development of Mo/Au TES X-ray Microcalorimeter
Fred Michael Finkbeiner, Joseph S. Adams, Simon R. Bandler, Gabriele L. Betancourt-Martinez, Ari David Brown, Meng-Ping Chang, James A. Chervenak, Meng P. Chiao, Aaron M. Datesman, Megan E. Eckart, Richard L. Kelley, Caroline A. Kilbourne, Antoine R. Miniussi, Samuel J. Moseley, Frederick Scott Porter, John E. Sadleir, Kazuhiro Sakai, Stephen James Smith, Nicholas A. Wakeham, Edward J. Wassell, and Wonisk Yoon

IEEE Transactions on Applied Superconductivity, VOL. 27, NO. 4, JUNE 2017

Carrier dynamics in GaAsBi quantum wells
S. Azaizia, A. Balocchi, D. Lagarde, A. Arnoult, X. Marie, C. Fontaine, H. Carrère

Nanotechnology Materials and Devices Conference, 2016 IEEE

ErAsSb nanoparticle growth on GaAs surface by molecular beam epitaxy
Yuanchang Zhang, Kurt G. Eyink, Joseph Peoples, Krishnamurthy Mahalingam, Madelyn Hill, Larry Grazulis

Journal of Crystal Growth, Vol 435, 2016, pp. 62-67

MCT by MBE on GaAs at AIM: State of the Art and Roadmap
H. Figgemeier, J. Wenisch, D. Eich, S. Hanna, W. Schirmacher, H. Lutz, T. Schallenberg, R. Breiter

Proc. SPIE 9451, Infrared Technology and Applications XLI, 945127 (June 4, 2015)

Growth and Characterization of Epitaxial Al Layers on GaAs and Si Substrates for Superconducting CPW Resonators in Scalable Quantum Computing Systems
Julie Tournet, University of Waterloo

University of Waterloo Theses & Dissertations, 2015

Evaluation of HgCdTe on GaAs Grown by Molecular Beam Epitaxy for High-Operating-Temperature Infrared Detector Applications
J. Wenisch, W. Schirmacher, R. Wollrab, D. Eich, S. Hanna, R. Breiter, H. Lutz, and H. Figgemeier

Journal of Electronic Materials September 2015, Volume 44, Issue 9, pp 3002-3006

Reduction of Process Variation Through Automated Substrate Temperature Uniformity Mapping in Multi-Wafer MBE Systems
Thomas J. Rogers, Likang Li, Robert Yanka, Chris Santana, Jason R. Williams, Charles A. Taylor II, Darryl Barlett

The International Conference on Compound Semiconductor Manufacturing Technology 2008

Adsorption-controlled molecular-beam epitaxial growth of BiFeO3
J.F. Ihlefeld, A. Kumar, V. Gopalan, D.G. Schlom, Y.B. Chen, X.Q. Pan, T. Heeg, J. Schubert, X. Ke, P. Schiffer, J. Orenstein, L.W. Martin, Y.H. Chu, and R. Rames

Applied Physics Letters 91, 2007, pp. 071922

Substrate temperature measurement using a commercial band-edge detection system
I. Farrer, J.J. Harris, R. Thomson, D. Barlett, C.A. Taylor II, and D.A. Ritchie

2006 MBE Conference: Tokyo

Growth related interference effects in band edge thermometry of semiconductors.
R. N. Sacks, D. Barlett, C. A. Taylor II, and J. Williams

J.V.S.T. B 23, 2005

In situ temperature control of MBE growth using band-edge thermometry.
Shane Johnson, Chau-Hong Kuo, Martin Boonzaayer, Wolfgang Braun, Ulrich Koelle, Yong-Hang Zhang, and John Roth

J.V.S.T. B 16, 1998, pp. 1502-1506

Precision of noninvasive temperature measurement by diffuse reflectance spectroscopy.
T.P. Pearsall, Stevan R. Saban, James Booth, Barrett T. Beard Jr., and S.R. Johnson

Rev. Sci. Instrum. 66, 1995, pp. 4977-4980

Diffuse optical reflectivity measurements on GaAs during MBE processing.
C. Lavoie, S.R. Johnson, J.A. Mackenzie, T. Tiedje, and T. van Buuren.

J.V.S.T. A 10, 1992, pp. 930-933

 

k-Space references are a compilation of published papers that either offer a review of the techniques used by the kSA MOS, or specifically use the kSA MOS for work within the paper.

Effect of Intrinsic Stress on Structural and Optical Properties of Amorphous Si-Doped SnO2 Thin-Film
Honglong Ning, Xianzhe Liu, Hongke Zhang, Zhiqiang Fang, Wei Ca, Jianqiu Chen, Rihui Yao, Miao Xu, Lei Wang, Linfeng Lan, Junbiao Peng, Xiaofeng Wang and Zichen Zhang

Materials 2017, 10, 24

In situ stress observation in oxide films and how tensile stress influences oxygen ion conduction
Aline Fluri, Daniele Pergolesi, Vladimir Roddatis, Alexander Wokaun and Thomas Lippert

Nature Communications 10.1038/ncomms10692 (2016)

Volmer-Weber growth stages of polycrystalline metal films probed by in situ and real-time optical diagnostics.
G. Abadias, L. Simonot, J.J. Colin, A. Michel, S. Camelio, and D. Babonneau

Appl. Phys. Lett. 107, 183105 (2015)

Porous Thick Film Lanthanum Strontium Ferrite Stress and Oxygen Surface Exchange Bilayer Curvature Relaxation Measurements
Qing Yang and Jason D. Nicholas

Journal of The Electrochemical Society, 161 (11) F3025-F3031 (2014)

In Situ Measurement of CuPt Alloy Ordering Using Strain Anisotropy
Ryan M. France, William E. McMahon, Joongoo Kang, Myles A. Steiner, and John F. Geisz

Journal of Appl. Physics, 115, 053502, 2014

In situ oxygen surface exchange coefficient measurements on lanthanum strontium ferrite thin films via the curvature relaxation method
Qing Yang, Theodore E. Burye, Richard R. Lunt, and Jason D. Nicholas

Solid State Ionics 249–250 (2013) 123–128

In Situ Combined Synchrotron X-Ray Diffraction and Wafer Curvature Measurements During Formation of Thin Palladium Silicide Film on Si(001) and Si(111)
J. Fouet, M.I. Richard, C. Mocuta, C. Guichet, O. Thomas

Nuclear Instruments and Methods in Physics Research, B 284 (2012), pp 74-77

In Situ Stress Evolution During Growth of Transition Metal Nitride Films and Nanocomposites
G. Abadias, L.E. Koutsokeras, P.A. Patsalas, W. Leroy, D. Delpa, S.V. Zlotsi, V.V. Uglov

Nanomaterials: Applications and Properties (NAP-2011). Vol.1, PartII

In situ Measurement of Biaxial Modulus of Si Anode for Li-ion Batteries
V.A. Sethuraman, M.J. Chon, M. Shimshak, N. Van Winkle, P.R. Guduru

Electrochemistry Communications, 12(11), 1614-1617 2010

In situ measurement of the internal stress evolution during sputter deposition of ZnO:Al
S. Michotte, J.Proost

Solar Energy Materials & Solar Cells 98 (2012) 253–259

Periodic variation of stress in sputter deposited Si/WSi2 multilayers
Kimberly MacArthur, Bing Shi, Ray Conley and Albert T. Macrander

Applied Physics Letters 99, 081905 (2011)

On the use of a multiple beam optical sensor for in situ curvature monitoring in liquids
Q. Van Overmeere, J.-F. Vanhumbeeck, and J. Proost

Review of Scientific Instruments 81, 045106, 2010

The NSLS-II Multilayer Laue Lens Deposition System
Ray Conley, Nathalie Bouet, James Biancarosa, Qun Shen, Larry Boas, John Feraca, Leonard Rosenbaum

SPIE 2009

Correlation of growth stress and structural evolution during metalorganic chemical vapor deposition of GaN on (111) Si
Srinivasan Raghavan, Xiaojun Weng, Elizabeth Dickey, and Joan M. Redwing, Department of Materials Science and Engineering, Materials Research Institute, The Pennsylvania State University

Appl. Phys. Lett. Vol. 88, 041904, 2006

Growth stresses and cracking in GaN films on (111) Si grown by metal-organic chemical vapor deposition. I. AlN buffer layers
Srinivasan Raghavan and Joan Redwing Department of Materials Science and Engineering, Materials Research Institute, The Pennsylvania State University

Journal of Appl. Physics, 98, 023514, 2005

Growth stresses and cracking in GaN films on (111) Si grown by metal-organic chemical vapor deposition. I. AlN buffer layers
Srinivasan Raghavan and Joan Redwing Department of Materials Science and Engineering, Materials Research Institute, The Pennsylvania State University

Journal of Appl. Physics, 98, 023514, 2005

Growth stresses and cracking in GaN films on (111) Si grown by metal-organic chemical vapor deposition. II. Graded AlGaN buffer layers
Srinivasan Raghavan and Joan Redwing, Department of Materials Science and Engineering, Materials Research Institute, The Pennsylvania State University

Journal of Appl. Physics, 98, 023515, 2005

Evolution of surface morphology and film stress during MOCVD growth of InN on sapphire substrates
Abhishek Jain, Srinivasan Raghavan, Joan M. Redwing, Department of Materials Science and Engineering, Materials Research Institute, The Pennsylvania State University

Journal of Crystal Growth 269 128-133, 2004

In situ stress measurements during MOCVD growth of AlGaN on SiC
Jeremy D. Acord, Srinivasan Raghavan, David W. Snyder, Joan M. Redwing, Materials Research Institute and Applied Research Laboratory, The Pennsylvania State University

Journal of Crystal Growth 272, 65-71, 2004

Effect of AlN interlayers on growth stress in GaN layers deposited on (111) Si
Srinivasan Raghavan, Xiaojun Weng, Elizabeth Dickey, and Joan M. Redwing, Department of Materials Science and Engineering, Materials Research Institute, The Pennsylvania State University

Appl. Phys. Lett. Vol. 87, 142101 2005

Real-time strain evolution during growth of InxAl1-xAs/GaAs metamorphic buffer layers
C. Lynch, R. Beresford, and E. Chason, Brown University

J. Vac. Sci. Technol. B 22, 1539 2004

Evolution of the growth stress, stiffness, and microstructure of alumina thin films during vapor deposition
Joris Proost and Frans Spaepen, Harvard University

Journal of Appl. Phys., Vol. 91, No. 1, 1 Jan. 2002

Intrinsic stress development in Ti-C:H ceramic nanocomposite coatings
B. Shi and W. J. Meng – Louisiana State University
L. E. Rehn and P. M. Baldo – Argonne National Laboratory

Appl. Phys. Lett., Vol. 81, No.2, 8 July 2002

Stress evolution during metalorganic chemical vapor deposition of GaN
S. Hearne, E. Chason, J. Han, J. A. Floro, J. Figiel, and J. Hunter, H. Amano, I. S. T. Tsong

Appl. Phys. Lett. Vol. 74, no. 3, 1999

Stress Evolution in Sputtered FCC Metal Multilayers
Vidya Ramaswamy, William D. Nix, and Bruce M. Clemens

Stanford University

Stress Evolution During Growth of Sputtered Ni/Cu Multilayers
Vidya Ramaswamy, Bruce M. Clemens, and William D. Nix

Stanford University 1997

Stress and Defect Control in GaN Using Low Temperature Interlayers
Hiroshi Amano, Motoaki Iwaya, Takayuki Kashima, Maki Katsuragawa, Isamu Akasaki, Jung Han, Sean Hearne, Jerry A. Floro, Eric Chason and Jeffrey Figiel

Appl. Phys. Part.1, Vol. 37, no.12B, 1998

Real Time Measurement of Epilayer Strain Using a Simplified Water Curvature Technique
J. A. Floro, E. Chason, and S. R. Lee

Sandia National Laboratories 1996

Measuring Ge segregation by real-time stress monitoring during Si 1-xGe x molecular beam epitaxy
J. A. Floro and E. Chason

Appl. Phys. Lett 69, 1996 (p. 3830)

Measuring Ge segregation by real-time stress monitoring during Si 1-xGe x molecular beam epitaxy
J. A. Floro and E. Chason

Appl. Phys. Lett 69, 1996 (p. 3830)

 

k-Space references are a compilation of published papers that either offer a review of the techniques used by the kSA MOS Ultra/Thermal Scan, or specifically use the kSA MOS Ultra/Thermal Scan for work within the paper

Cyclic mechanical behavior of thin layers of copper: A theoretical and numerical study
Klaus Fellner, Thomas Antretter, Peter F Fuchs and Tiphaine Pélisset

J Strain Analysis, 2016, Vol. 51(2) 161-169

Thermal conductivity of sputtered amorphous Ge films
Zhan, Tianzhuo, Yibin Xu, Masahiro Goto, Yoshihisa Tanaka, Ryozo Kato, Michiko Sasaki, and Yutaka Kagawa

AIP Advances 4, no. 2 (2014): 027126

Passivation of AlGaN/GaN HEMT by Silicon Nitride
Dayal, S., Sunil Kumar, Sudhir Kumar, H. Arora, R. Laishram, R. K. Chaubey, and B. K. Sehgal

Physics of Semiconductor Devices, pp. 141-143. Springer International Publishing, 2014

Thermal stability on Mo/B4C multilayers
Barthelmess, Miriam, and Saša Bajt.

International Society for Optics and Photonics, 2011

GaN-based LEDs grown on 6-inch diameter Si (111) substrates by MOVPE
Zhu, D., C. McAleese, K. K. McLaughlin, M. Häberlen, C. O. Salcianu, E. J. Thrush, M. J. Kappers et al

SPIE OPTO: Integrated Optoelectronic Devices, pp. 723118-723118. International Society for Optics and Photonics, 2009

k-Space references are a compilation of published papers that either offer a review of the techniques used by the kSA RateRat Pro, or specifically use the kSA RateRat Pro for work within the paper.

In Situ Pre-Growth Calibration Using Reflectance as a Control Strategy for MOCVD Fabrication of Device Structures
William G. Breiland, Hong Q. Hou, Herman C. Chui, and Burrel E. Hammons, Sandia National Laboratories

Journal of Crystal Growth, 174(1997)564.

In Situ Reflectance and Virtual Interface Analysis for Compound Semiconductor Process Control
William G. Breiland, Hong Q. Hou, Burrel E. Hammons, and John F. Klem, Sandia National Laboratories

XXVIII SOTAPOCS Symposium, Electrochemical Society, San Diego, CA, May 3-8, 1998

k-Space references are a compilation of published papers that either offer a review of the techniques used by the kSA ICE, or specifically use the kSA ICE for work within the paper.

Visible-Blind APD Heterostructure Design With Superior Field Confinement and Low Operating Voltage
John Bulmer, Puneet Suvarna, Jeff Leathersich, Jonathan Marini, Isra Mahaboob, Neil Newman, F. Shadi Shahedipour-Sandvik

IEEE Photonics Technology Letters (Volume:28, Issue: 1) 2015