Stress, Strain, Curvature/Bow

In-situ, laser+optically-based curvature and stress measurement for semiconductors, compatible with MOCVD, CVD, sputtering, and MBE with optical access; also offering optional deposition rate and process control. Additionally, the same system is also capable of ex-situ, pre- and post-acquisition curvature and stress measurement with radius of curvature detection up to 10 kilometers. kSA MOS

Ex-situ, laser+optically-based curvature and stress measurement of practically any polished surface (including semiconductors, lenses, mirrors with radius of curvature resolution greater than 100 kilometers). kSA MOS Ultra-Scan

When used with RHEED (Reflective High-Energy Electron Diffraction) equipped systems, kSA 400 can provide stress and strain information through RHEED diffraction patterns. kSA 400

Need to do non-lattice matched compound semiconductor deposition?
Work with Silicon-on-Insulator (SOI) and strained silicon substrates?
How about capturing and analyzing the real-time evolution of 2D thin-film stress for process control?

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Please contact us to discuss your real-time monitoring needs.