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- In situ, laser+optically-based curvature and stress measurement for semiconductors, compatible with MOCVD, CVD, sputtering, and MBE with optical access
- ...Optional deposition rate and process control
- ...Same system also capable of ex-situ, pre- and post-acquisition curvature and stress measurement with radius of curvature detection up to 10 kilometers
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- kSA MOS
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Ex situ, laser+optically-based curvature and stress measurement of practically any polished surface (including semiconductors, lenses, mirrors with radius of curvature resolution greater than 100 kilometers)
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kSA MOS Ultra-Scan
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When used with RHEED (Reflective High-Energy Electron Diffraction) equipped systems, kSA 400 can provide stress and strain information through RHEED diffraction patterns
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kSA 400
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Compare Stress, Strain, Curvature/Bow Products |
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Need to do non-lattice matched compound semiconductor deposition?
Work with Silicon-on-Insulator (SOI) and strained silicon substrates?
How about capturing and analyzing the real-time evolution of 2D thin-film stress for process control?
We have the tool for you. Compare products or learn about each tool in detail:
kSA MOS, kSA MOS Ultra-Scan, and kSA 400.
Please contact us to discuss your real-time monitoring needs.
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