| |
|
|
|
 |
Temperature |
Measure wafer and/or thin-film temperature via band gap thermometry: it's non-contact, non-invasive, and real-time. Insensitive to changing view port transmission, stray light sources, and signal contribution from substrate heaters, measure GaAs, Si, SiC, InP, ZnSe, ZnTe, and GaN.
With the kSA Temperature Solution, get:
- substrate temperature during epitaxial growth
- temperature profile mapping
- single or multi-wafer temperature profiling during epitaxial growth
- temperature monitoring during thermal anneal
- temperature monitoring during plasma process
- in-situ growth rate calibration
|
kSA BandiT
|
|
 |
Stress, Strain,
Curvature/Bow |
- In situ, laser+optically-based curvature and stress measurement for semiconductors, combatable with MOCVD, CVD, supttering, and MBE with optical access
- ...Optional deposition rate and process control
- ...Same system also capable of ex-situ, pre- and post-acquisition curvature and stress measurement with radius of curvature detection up to 10 kilometers
- kSA MOS
| | |
| |
Ex situ, laser+optically-based curvature and stress measurement of practically any polished surface (including semiconductors, lenses, mirrors with radius of curvature resolution greater than 100 kilometers)
|
kSA MOS Ultra-Scan
|
| |
In/Ex situ, complete dynamic and static thermal stress analysis of polished samples up to 100mm in diameter
|
kSA MOS Thermal-Scan
|
| |
When used with RHEED-equipped systems, kSA 400 can provide stress and strain information through RHEED diffraction patterns
|
kSA 400
|
Compare Stress, Strain, Curvature/Bow Products |
|
 |
Growth Rate |
High-power laser-based, real-time, in situ deposition rate, layer thickness, optical constants (n,k), and process control
|
kSA RateRat Pro
|
|
When using the kSA MOS in-situ curvature- and stress-monitoring system, real-time changes in laser intensity also can be used for real-time growth-rate analysis.
|
kSA MOS
|
|
Spectroscopic-based, in-situ deposition rate and thickness from pyrometric interference oscillation available during temperature measurement
|
kSA BandiT
|
|
When used with RHEED-equipped systems, RHEED intensity oscillations observed during epitaxial growth can be used to determine growth rate and thickness.
|
kSA 400
|
Compare Growth Rate Products |
|
 |
RHEED,
Surface Analysis |
Get the most from your RHEED pattern, whether you're analyzing a static diffraction pattern or acquiring data during high speed rotation.
With the kSA RHEED Solution, get:
- growth rate
- lattice spacing/strain
- surface coherence
- surface structure/reconstruction
- multiple azimuth/triggering acquisition
- and Low Energy Electron Diffraction (LEED), Phase-Locked Epitaxy, Auger/X-Ray Photoemission Spectroscopy, Electron Gun Control, and Rotation Monitoring and Triggering via our Plug-In Options
|
kSA 400
|
|
 |
Custom |
We can customize any of our products to meet your needs or build an entirely new application for you.
k-Space creates custom software and optical-based analysis tools for advanced R&D applications as well as turn-key solutions for Original Equipment Manufacturers, providing complete, customized solutions for each customer.
|
Contact us
|
|
Need real-time monitoring and/or post-acquisition analysis of your process or material?
|
kSA EyeSpy
or please Contact us
|
