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High-power laser-based, real-time, in situ deposition rate, layer thickness, optical constants (n,k), and process control
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kSA RateRat
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When using the kSA MOS in-situ curvature- and stress-monitoring system, real-time changes in laser intensity also can be used for real-time growth-rate analysis.
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kSA MOS
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Spectroscopic-based, in-situ deposition rate and thickness from pyrometric interference oscillation available during temperature measurement
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kSA BandiT
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When used with RHEED (Reflection High-Energy Electron Diffraction) equipped systems, RHEED intensity oscillations observed during epitaxial growth can be used to determine growth rate and thickness.
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kSA 400
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Compare Growth Rate Products |
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Need recipe-controlled deposition with advanced process control?
How about multi-wafer growth rate during substrate rotation?
We have the tool for you. Compare products or learn about each tool in detail:
kSA RateRat Pro, kSA MOS, kSA BandiT, and kSA 400.
Please contact us to discuss your real-time monitoring needs.
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