kSA MOS Information

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kSA MOS - Product Information

Product Inquiry		This page contains all the product information for the kSA MOS. If you are looking for kSA MOS support, please click here. General Information MOS Housings Application Notes White Papers References

*General Information* kSA MOS flyer Two-page flyer describing the features of the kSA MOS kSA MOS specifications Seven-page document describing hardware/software specifications in detail
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*MOS Housings* k-Space provides two standard types of MOS systems: (Note: 3-D models linked below require Windows® Internet Explorer® and installing eDrawings® when prompted.) Normal incidence single port configuration ( 3-D model , 2-D pdf ) Two-port configuration, consisting of a laser housing ( 3-D model , 2-D pdf )and a detector housing ( 3-D model , 2-D pdf ) We also ofter custom mounts to accommodate any chamber configuration. In addition, bench-top, ex-situ MOS systems are also available (as MOS or see MOS Ultra-Scan).
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*Application Notes* kSA MOS Application Notes are documents written about a specific component or components of the kSA MOS thin-film stress system. These documents are designed to explain details of the kSA MOS capabilities and aid the user in maximizing the utility of the system. k-Space User Manuals are available for download as well by contacting us. Note that some documents contain proprietary information, and therefore are password protected. If you are a k-Space customer, please email us requesting a username and password, and we will respond via email with a proper username and password, allowing you access to the document. *There are no application notes at this time.*
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*White Papers* k-Space white papers are documents that describe a technology or technologies utilized by a k-Space product. White papers may also include calibration procedures, application to various technologies, or comparisons with similar products. Note that some documents may contain proprietary information, and therefore are password protected. If you are a k-Space customer, please email us requesting a username and password, and we will respond via email with a proper username and password, allowing you access to the document. Curvature-based Techniques for Real-Time Stress Measurement During Thin Film Growth (06-26-02) Jerrold A. Floro and Eric Chason Sandia National Laboratories Use of kSA MOS System for Stress and Thickness Monitoring during CVD Growth (05-17-00) Eric Chason Brown University A Laser-Based Thin-Film Growth Monitor (04-25-02) Charles Taylor, Darryl Barlett, Eric Chason, and Jerry Floro The Industrial Physicist, March 1998 (p.26-30) Resolution and sensitivity of stress measurements with the k-Space Multi-beam Optical Sensor (MOS) System (05-19-04) Eric Chason Sandia National Laboratories
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*References* k-Space references are a compilation of published papers that either offer a review of the techniques used by the kSA MOS, or specifically use the kSA MOS for work within the paper. Growth stresses and cracking in GaN films on (111) Si grown by metal-organic chemical vapor deposition. II. Graded AlGaN buffer layers Srinivasan Raghavan and Joan Redwing Department of Materials Science and Engineering, Materials Research Institute, The Pennsylvania State University Journal of Appl. Physics, 98, 023515, 2005 Growth stresses and cracking in GaN films on (111) Si grown by metal-organic chemical vapor deposition. I. AlN buffer layers Srinivasan Raghavan and Joan Redwing Department of Materials Science and Engineering, Materials Research Institute, The Pennsylvania State University Journal of Appl. Physics, 98, 023514, 2005 Evolution of surface morphology and film stress during MOCVD growth of InN on sapphire substrates Abhishek Jain, Srinivasan Raghavan, Joan M. Redwing Department of Materials Science and Engineering, Materials Research Institute, The Pennsylvania State University Journal of Crystal Growth 269 128-133, 2004 In situ stress measurements during MOCVD growth of AlGaN on SiC Jeremy D. Acord, Srinivasan Raghavan, David W. Snyder, Joan M. Redwing Materials Research Institute and Applied Research Laboratory, The Pennsylvania State University Journal of Crystal Growth 272, 65-71, 2004 Correlation of growth stress and structural evolution during metalorganic chemical vapor deposition of GaN on (111) Si Srinivasan Raghavan, Xiaojun Weng, Elizabeth Dickey, and Joan M. Redwing Department of Materials Science and Engineering, Materials Research Institute, The Pennsylvania State University Appl. Phys. Lett. Vol. 88, 041904, 2006 Effect of AlN interlayers on growth stress in GaN layers deposited on (111) Si Srinivasan Raghavan, Xiaojun Weng, Elizabeth Dickey, and Joan M. Redwing Department of Materials Science and Engineering, Materials Research Institute, The Pennsylvania State University Appl. Phys. Lett. Vol. 87, 142101 2005 Real-time strain evolution during growth of In_xAl_1-xAs/GaAs metamorphic buffer layers C. Lynch, R. Beresford, and E. Chason Brown University J. Vac. Sci. Technol. B 22, 1539 2004 Evolution of the growth stress, stiffness, and microstructure of alumina thin films during vapor deposition Joris Proost and Frans Spaepen Harvard University Journal of Appl. Phys., Vol. 91, No. 1, 1 Jan. 2002 Intrinsic stress development in Ti-C:H ceramic nanocomposite coatings B. Shi and W. J. Meng - Louisiana State University L. E. Rehn and P. M. Baldo - Argonne National Laboratory Appl. Phys. Lett., Vol. 81, No.2, 8 July 2002 Stress evolution during metalorganic chemical vapor deposition of GaN S. Hearne, E. Chason, J. Han, J. A. Floro, J. Figiel, and J. Hunter, H. Amano, I. S. T. Tsong Appl. Phys. Lett. Vol. 74, no. 3, 1999 Real Time Measurement of Epilayer Stain Using a Simplified Water Curvature Technique J. A. Floro, E. Chason, and S. R. Lee Sandia National Laboratories Stress Evolution in Sputtered FCC Metal Multilayers Vidya Ramaswamy, William D. Nix, and Bruce M. Clemens Stanford University Stress Evolution During Growth of Sputtered Ni/Cu Multilayers Vidya Ramaswamy, Bruce M. Clemens, and William D. Nix Stanford University Stress and Defect Control in GaN Using Low Temperature Interlayers Hiroshi Amano, Motoaki Iwaya, Takayuki Kashima, Maki Katsuragawa, Isamu Akasaki, Jung Han, Sean Hearne, Jerry A. Floro, Eric Chason and Jeffrey Figiel Appl. Phys. Part.1, Vol. 37, no.12B, 1998 Measuring Ge segregation by real-time stress monitoring during Si 1-xGe x molecular beam epitaxy J. A. Floro and E. Chason Appl. Phys. Lett 69, 1996 (p. 3830)
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