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Understanding stress, strain, curvature/bow is critical for a variety of applications, including semiconductor deposition, silicon on insulator (SOI), glass, and strained silicon substrates.
Based on proven MOS technology, the fully integrated ex-situ kSA MOS Ultra-Scan maps the 2D curvature of semiconductor wafers, optical mirrors, lenses, or practically any polished surface. Typical radius-of-curvature resolution is greater than 50 kilometers on samples up to 300mm in diameter.
Please download the kSA MOS Ultra-Scan datasheet or kSA MOS Ultra-Scan specifications for more information and options.
Use your kSA MOS for a variety of tasks, including:
- analyze stress impact of thin-film process steps
- mapping pre-process wafer curvature to ensure flatness
The kSA MOS Ultra-Scan offers 10x higher stress resolution, lower noise, and more powerful mapping capabilities than any other system available. Our customers include industry leaders, national laboratories, and universities.
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