 |
|
Understanding stress, strain, curvature/bow is critical for a variety of applications, including semiconductor wafers (Silicon, SOI, Compound Semiconductor), High performance optical coatings (mirrors, lenses, glass), Rapid thermal Annealing and tempering processes.
The kSA MOS Thermal-Scan system combines patented MOS technology with a high performance thermal processing chamber and gas delivery system. By integrating a single axis scanning stage, spatially-resolved curvature and stress measurement as a function of sample temperature is now possible. For rapid thermal processing measurement, the Thermal Scan system can acquire data at fast rates at any wafer point in order to ensure accurate, time-resolved stress information is obtained. Typical radius-of-curvature resolution is greater than 100 kilometers at room temperature and 20km at high temperature on samples up to 200mm in diameter.
Please download the kSA MOS Thermal-Scan datasheet for more information and options.
Benefits of kSA MOS Thermal-Scan:
- High speed data acquisition for stress analysis during annealing, tempering or other high temperature processes
- Real-time 2D quantitative film stress analysis
- Uniform sample heating yields accurate spatially-resolved stress measurement
The kSA MOS Thermal-Scan offers 10x higher stress resolution, lower noise, and more powerful mapping capabilities than any other system available. Our customers include industry leaders, national laboratories, and universities.
Please contact us to discuss your thin-film characterization needs, including 2D curvature, 2D stress, in situ or ex situ, growth rate, and thickness.
|
