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          MOS - Real-Time Monitoring of Thin-Flim Stress and Wafer Curvature

Understanding and controlling stress in thin films is critical for achieving desired optical, electronic, and mechanical properties.

Developed jointly with Sandia National Laboratories, the kSA Multi-beam Optical Sensor (MOS) is ideally suited for real-time feedback to process control systems in the production or research environment to make thin film stress and substrate curvature work for you.

Please download the kSA MOS datasheet or kSA MOS specifications for more information and options.

Use your kSA MOS for a variety of tasks, including real-time:

  • stress evolution during thin-film deposition, thermal cycling, and/or annealing
  • growth rate and optical constants (n,k) with optional plug-in module
  • stress, strain, and stress-thickness product

We have installed the kSA MOS on most all types of commercial MBE, MOCVD, sputtering, PLD, and annealing chambers worldwide. Our customers include industry leaders, national laboratories, and universities.

Please contact us to discuss your thin-film characterization needs, including 2D curvature, 2D stress, in situ or ex situ, growth rate, and thickness.

 kSA MOS Information

    Flyer

    Specifications

    MOS Housings

    Application Notes

    White Papers

    References

 Product Inquiry