|
Product Inquiry
|
|
This page contains all the product information for the kSA BandiT. If you are looking for kSA BandiT support, please click here.
General Information
Performance
Application Notes
White Papers
References
|
|
|
General Information
- kSA BandiT flyer
- Two-page flyer describing the features of the kSA BandiT
- kSA BandiT specifications
- Four-page document describing hardware/software specifications in detail
|
| Top |
|
|
Performance
- Wavelength Ranges
- 380-1100 nm (BandiT Visible (VIS) model)
- 870-1400 nm (BandiT Near-IR (NIR) model)
- Temperature Update Rate
- 20 Hz (typical)
- 1 Hz (minimum)
- Typical Temperature Ranges
| Material |
Range |
Model |
| ZnSe |
RT-700°C |
VIS |
| ZnTe |
RT-700°C |
VIS |
| SiC |
RT-1300°C |
VIS |
| GaN |
RT-1300°C |
VIS |
| GaAs |
RT-650°C |
NIR |
| InP |
RT-650°C |
NIR |
| Si |
RT-550°C |
NIR |
- Temperature Resolution
- 0.1 °C
- Stability
- ± 0.2 °C (4 hours)
- Accuracy
- ± 2 °C
- Outputs
- Real-time display
- 10V analog (configurable)
- Inputs
- analog (configurable)
|
| Top |
|
|
Application Notes
kSA BandiT Application Notes are documents written about a specific component or components of the kSA BandiT real-time wafer temperature system. These documents are designed to explain details of the kSA BandiT capabilities and aid the user in maximizing the utility of the system. k-Space User Manuals are available for download as well by contacting us.
Note that some documents contain proprietary information, and therefore are password protected. At this time, if you are a k-Space customer, please email us requesting the documents and we will send them to you.
- kSA BandiT for Growth Rate
- kSA BandiT for GaN
|
| Top |
|
|
White Papers
k-Space white papers are documents that describe a technology or technologies utilized by a k-Space product. White papers may also include calibration procedures, application to various technologies, or comparisons with similar products.
Note that some documents may contain proprietary information, and therefore are password protected. If you are a k-Space customer, please email us requesting a username and password, and we will respond via email with a proper username and password, allowing you access to the document.
- kSA Band Edge Thermometry vs. Emissivity-Corrected Pyrometry
- The purpose of this document is to evaluate the current state of the art with respect to both methods while discussing advantages and disadvantages of each with respect to typical applications.
-
- Pyrometric Oscillations For Growth Rate
- This document describes BandiT's ability to determine deposition rate from pyrometric interference oscillations. This capability is built-in to BandiT, making it a dual purpose temperature and deposition rate monitoring tool.
- BandiT Spectrometer Calibration
- This document describes the procedure for checking the calibration of the spectrometer.
- kSA BandiT Calibration
- This paper gives a detailed description of how calibration files are generated for the kSA BandiT system, and how BandiT temperature measurement accuracy is independently verified using known RHEED surface transition temperatures.
- kSA BandiT Measures SiC Substrate Temperature
- This paper addresses the technological challenges of SiC temperature measurement, and shows some reproducibility results obtained with kSA BandiT.
- kSA BandiT: Band-edge Thermometry
- A PowerPoint presentation describing the kSA BandiT system, including both hardware and software components. Data is also presented highlighting the features of the BandiT system, including low temperature measurement and spatially-resolved temperature measurement during substrate rotation.
|
| Top |
|
|
References
k-Space references are a compilation of published papers that either offer a review of the techniques used by the kSA BandiT, or specifically use the kSA BandiT for work within the paper.
Adsorption-controlled molecular-beam epitaxial growth of BiFeO3
- J.F. Ihlefeld, A. Kumar, V. Gopalan, D.G. Schlom, Y.B. Chen, X.Q. Pan, T. Heeg,
- J. Schubert, X. Ke, P. Schiffer, J. Orenstein, L.W. Martin, Y.H. Chu, and R. Ramesh
- Applied Physics Letters 91, 2007, pp. 071922
-
- Substrate temperature measurement using a commercial band-edge detection system
- I. Farrer, J.J. Harris, R. Thomson, D. Barlett, C.A. Taylor II, and D.A. Ritchie
- 2006 MBE Conference: Tokyo
- Growth related interference effects in band edge thermometry of semiconductors
- R. N. Sacks, D. Barlett, C. A. Taylor II, and J. Williams
- J.V.S.T. B 23, 2005
- In situ temperature control of MBE growth using band-edge thermometry
- Shane Johnson, Chau-Hong Kuo, Martin Boonzaayer, Wolfgang Braun,
Ulrich Koelle, Yong-Hang Zhang, and John Roth
- J.V.S.T. B 16, 1998, pp. 1502-1506
- Precision of noninvasive temperature measurement by diffuse reflectance spectroscopy
- T.P. Pearsall, Stevan R. Saban, James Booth, Barrett T. Beard Jr., and S.R. Johnson
- Rev. Sci. Instrum. 66, 1995, pp. 4977-4980
- Diffuse optical reflectivity measurements on GaAs during MBE processing
- C. Lavoie, S.R. Johnson, J.A. Mackenzie, T. Tiedje, and T. van Buuren
- J.V.S.T. A 10, 1992, pp. 930-933
|
| Top |
|
|
