The kSA MOS Ultra-Scan is a flexible, high-resolution scanning curvature and stress measurement system. Based on proven kSA MOS technology, this fully integrated ex-situ tool maps the curvature of semiconductor wafers, optical mirrors, lenses, or practically any polished surface. The kSA MOS Ultra-Scan measures stress by monitoring wafer curvature with an array of parallel laser beams and a CCD area detector. Optimized optics and detection system combined with proven fitting algorithms result in typical radius of curvature resolution greater than 50 kilometers. Scans are fully programmable for selected area, line scan, or full area map. The kSA MOS Ultra-Scan also provides quantitative film stress with full area map for 50-200mm wafers by first scanning the bare substrate and then re-scanning the sample post-process.

The kSA MOS Ultra-Scan offers 10x higher stress resolution, lower noise, and more powerful mapping capabilities than any other system available. Applications include non-lattice matched compound semiconductor deposition, Silicon on Insulator (SOI) and strained silicon substrates, or any polished surface where 2D curvature and stress are desired. Samples are manually loaded onto the xy stage for scanning.