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kSA MOS - Real-time Monitoring of Thin Film Stress
References    

k-Space references are a compilation of published papers that either offer a review of the techniques used by the kSA MOS, or specifically use the kSA MOS for work within the paper.

1. Measuring Ge segregation by real-time stress monitoring during Si 1-xGe x molecular beam epitaxy

J. A. Floro and E. Chason
Appl. Phys. Lett 69, 1996 (p. 3830)

2. Stress and Defect Control in GaN Using Low Temperature Interlayers

Hiroshi Amano, Motoaki Iwaya, Takayuki Kashima, Maki Katsuragawa, Isamu Akasaki, Jung Han, Sean Hearne, Jerry A. Floro, Eric Chason and Jeffrey Figiel
Appl. Phys. Part.1, Vol. 37, no.12B, 1998

3. Stress Evolution During Growth of Sputtered Ni/Cu Multilayers

Vidya Ramaswamy, Bruce M. Clemens, and William D. Nix
Stanford University

4. Stress Evolution in Sputtered FCC Metal Multilayers

Vidya Ramaswamy, William D. Nix, and Bruce M. Clemens
Stanford University

5. Real Time Measurement of Epilayer Stain Using a Simplified Water Curvature Technique

J. A. Floro, E. Chason, and S. R. Lee
Sandia National Laboratories

6. Stress evolution during metalorganic chemical vapor deposition of GaN

S. Hearne, E. Chason, J. Han, J. A. Floro, J. Figiel, and J. Hunter, H. Amano, I. S. T. Tsong
Appl. Phys. Lett. Vol. 74, no. 3, 1999

         
     
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