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2006

2005

k-Space Associates, Inc. has been a leading supplier of advanced instrumentation and software for the surface science and thin-film technology industry since 1992. Its systems are currently in use at hundreds of today's leading R&D laboratories in addition to the most advanced silicon wafer fabrication facilities worldwide. Extensive input and close collaboration from its worldwide customer base has lead to delivering powerful thin-film characterization products by which all others are measured.

2006

k-Space web site redesign complete
Ann Arbor, Michigan (10-18-2006)
 

k-Space Associates, Inc. has completely re-designed its website to focus on solutions in order to meet the needs of its customers.
 

As always, k-Space knows that the best products are developed with customers' input, and now, k-Space has incorporated customers' input into making k-Space's website easier to navigate too. Web site visitors will find new features on the web site, including an easy way to compare kSA products.
 

k-Space takes pride in giving its customers excellent support and looks forward to helping you solve your thin-film characterization and surface science needs.

2005

k-Space introduces novel temperature monitor for GaN and SiC growth
Ann Arbor, Michigan (07-19-2005)
 

k-Space Associates, Inc. has announced that it has developed the kSA GaN BandiT, a new optical temperature monitoring system which directly measures the temperature of GaN and SiC-based films commonly grown by MOCVD or MBE.
 

The plot to the right is real-time kSA GaN BandiT data showing spatially-resolved wafer temperature during multi-wafer MOCVD growth.

All current forms of GaN/SiC temperature measurement, including emissivity-corrected pyrometers (ECP's), rely upon technology that only measures black body radiation from the susceptor or heater behind the sample. This approach does not allow for direct temperature measurement of the sample, intrawafer temperature variations, or real time GaN surface temperature fluctuations. The new kSA GaN BandiT system directly measures a fundamental material property of semiconductors, namely the temperature-dependent band gap. By monitoring the absorption edge of the material (which is directly related to the band gap), direct temperature measurement is now possible for GaN and SiC, through 1300 °C.
 

The most attractive material systems for today's compound semiconductor applications are GaN and SiC, and surprisingly, all current forms of temperature measurement have not been able to directly and reproducibly measure the temperature of the film, notes Darryl Barlett, k-Space's General Manager. Our new kSA GaN BandiT is like having a 'virtual thermocouple' on the wafer surface during growth, enabling new temperature information with the promise of accelerating device performance.
 

The kSA GaN BandiT is not affected by changing view port transmission, stray IR light sources, reactor maintenance or system emissivity changes. Configurations are now available for most commercial single and multi-wafer MOCVD and MBE systems. Please contact k-Space for more details.
 
 

k-Space introduces in-situ thin film stress and growth rate monitor for production GaN MOCVD
Ann Arbor, Michigan (05-01-2005)
 

k-Space Associates, Inc. has announced that it has developed the kSA Mini-MOS&trade, a new in-situ thin film curvature and growth rate tool which can be used to quantitatively determine the induced thin-film stress and strain of MOCVD grown GaN epitaxial layers.
 

Based upon the company's existing Multi-beam Optical Sensor (kSA MOS™), the new Mini-MOS™ uses a laser spot array to directly measure the real-time change in curvature of semiconductor wafers, but now in a package that can be easily integrated on today's production MOCVD reactors. In addition to real-time curvature and stress measurement, intensity variations in the array are used to extract growth rate as well as important optical constant information (n, k) of the material. Since the patented technique uses multiple laser spots to monitor stress, it is virtually immune to system vibration and offers 10x higher resolution than any other technique.
 

Many of today's critical GaN based applications such as High Brightness LEDs and high power RF devices require integration of heterogeneous materials, for which induced stress and strain define the ultimate performance and yield, notes Darryl Barlett, k-Space's General Manager. Our new kSA Mini-MOS™ provides this important information and is based on the only commercially proven in-situ stress monitor available.
 
 

k-Space introduces high resolution thin film stress mapping tool
Ann Arbor, Michigan (04-11-2005)
 

k-Space Associates, Inc. has announced that it developed the kSA MOS Ultra-Scan, a new ex-situ thin film curvature mapping tool which can be used to quantitatively map the induced thin film stress of an entire wafer surface. The first system is already in use by a prominent Japanese research laboratory.
 

Based upon the company's existing in-situ Multi-beam Optical Sensor (kSA MOS™), the new Ultra-Scan uses a 2D laser array to directly map the curvature of semiconductor wafers, optical mirrors, lenses, or practically any polished surface. The system provides quantitative stress with full area map by first scanning the bare wafer surface and then re-scanning the wafer post process. While the standard system provides for scanning 150mm samples with 1 µm resolution, larger stages and higher resolution options available for advanced applications.
 

Many of today's critical thin film applications such as Silicon on Insulator (SOI), high performance optical coatings, and Strained Silicon require heterointegration of dissimilar materials for which induced stress define the ultimate performance and yield, notes Darryl Barlett, k-Space's General Manager. Our new kSA MOS Ultra-Scan raises the bar on available thin film stress mapping and provides a powerful tool for advancing these technologies.